TRANSISTOR DATASHEET D1555
Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440
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2n1092n13042n13052n1307+162n16132n17112n18932n21022n21482n2165transistor datasheet d1555d1555 transistortransistor d1651d1555d1557d1554d1651transistor s1854transistor d1555transistor d1878
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diode GEP 86 A
Abstract: scr bt 106 AD29 AD30 MX98723 CSR8 GEP diode
Contextual Info: ADVANCED INFORMATION MX98723 PCI/CARDBUS FAST ETHERNET CONTROLLER 1.0 Feature • A 32-bit CardBus/PCI fast Ethernet Controller integrates 10/100 Base-T MAC, NWAY, MII Interface and 10 Base-T transceiver • Compliant to CardBus specification of the PC Card
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mx9872332-bitpm0487diode gep 86 a+5scr bt 106ad29ad30csr8gep diode
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gep 45 diode
Abstract: AD29 AD30 MX98723UC
Contextual Info: ADVANCED INFORMATION MX98723UC PCI/CARDBUS FAST ETHERNET CONTROLLER 1.0 Feature • A 32-bit CardBus/PCI fast Ethernet Controller integrates 10/100 Base-T MAC, NWAY, MII Interface and 10 Base-T transceiver • Compliant to CardBus specification of the PC Card
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mx98723uc32-bite9935t4638501+432caxgep 45 diodead29ad30
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PA0016
Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
Contextual Info: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30
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14-dagarpa0016str11006so41p+7pioneer pa00167 segment to bcd converter 74c915saj14174hc145tms1122ic pa0016kor 2310 transistor
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SDIM40B060A
Contextual Info: -JGlitron Devices, Inc. FEATURES: SDIM40B060A 40 A 600 V Six - Pack Configuration PACKAGE: 20 A, 600 V at Tc = 110°C 3 Phase Output Inverter with Fast Free-Wheel Diodes Insulated Metal Baseplate 600 V Switching SOA Capability Short Circuit Rated Low On-State Saturation \foltage
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sdim40b060ais09001 |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UG5N120 Preliminary Insulated Gate Bipolar Transistor 21A, 1200V NPT N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODES DESCRIPTION The UTC UG5N120 is a NPT N-Channel IGBT, it uses UTC’s advanced technology to provide the customers with a minimum
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ug5n120o-220ug5n120l-ta3-tug5n120g-ta3-t+1qw-r207-029
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GEX 51 DIODE
Abstract: Gex DIODE Gex 66 diode marking code SM diode 218 Gex marking code KE diode diode GEP 86 A DIODE gde 18 diode gde 78 Diode GEG
Contextual Info: SURFACE MOUNT TVS DIODE Electrical Characteristics, 5.0 to 30 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage
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c5db02gex 51 diodegex diodegex 66 diode+7marking code sm diode218 gexmarking code ke diodediode gep 86 adiode gde 18diode gde 78diode geg
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Gex DIODE
Abstract: Gex 66 diode GEX 51 DIODE GEX 54 DIODE marking code KE diode diode marking GDE 38 SMJ30 diode Marking Code lm tvs diode GEP 86 A marking diode KE
Contextual Info: SURFACE MOUNT TVS DIODE Electrical Characteristics, 5.0 to 30 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage
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c5db02gex diodegex 66 diodegex 51 diode+7gex 54 diodemarking code ke diodediode marking gde 38smj30diode marking code lm tvsdiode gep 86 amarking diode ke
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bfm 2 TERMINAL DIODE
Abstract: Diode BFX 514 GFX DIODE Diode GFK diode gde 78 Gex DIODE Diode GFK 42 on 440 gex diode GEZ DIODES GFK 77
Contextual Info: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction
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bfm 2 terminal diodediode bfx 514gfx diodediode gfk+6diode gde 78gex diodediode gfk 42on 440 gex diodegez diodesgfk 77
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PJ 969 diode
Abstract: DIODE 25PH 500 M302E71 pj 809 HGTG20N50C1D 08/bup 3110 transistor
Contextual Info: HARRIS SEMICOND SECTOR ffl j a r s 1 bêE D • Lt30SE71 00502Ö3 732 ■ H A S HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 20 Amp, 500 Volt • Latch Free Operation
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t30se71hgtg20n50c1do-247500ns+8an7254an7260m302e71qd50s67pj 969 diodediode 25ph 500pj 80908/bup 3110 transistor
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Diode LT 443
Abstract: diode lt 823 948 LG DIODE gep 45 diode 100A-4V HGTP10N40C1D
Contextual Info: rjn HARRIS VMJ s e m i c o n d u c t o r HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features JE D E C TD-220AB • 10 Amp, 400 and 500 Volt T O P VIEW • V c e o n 2.5V Max.
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hgtp10n40c1dhgtp10n40e1dhgtp10n50c1dhgtp10n50e1d+9td-220abtp10nan7254an7260diode lt 443diode lt 823948 lg diodegep 45 diode100a-4v
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10N40F1D
Abstract: 10N50F1D GE 639 transistor 10n50 10N50F1 HGTP10N50F1D GEP diode RN2512
Contextual Info: HGTP10N40F1D, HGTP10N50F1D îs j h a r r i s t u » ™ 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Package Features • 10A, 400V and 500V JEOEC TO-220AB • Latch Free Operation EMITTER • Typical Fall Time < 1.4|iS
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hgtp10n40f1dhgtp10n50f1do-220ab00a/u9+710n40f1d10n50f1dge 639 transistor10n5010n50f1gep diodern2512
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PJ 969 diode
Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V
Contextual Info: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode
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500nshgtg20n50c1do-247an7254+11an7260pj 969 diodeg20n50c20n50c1dpj 986 diodef25 transistormosfet 20nge 639pj 809igbt 500v 35aigbt 20a 500v
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G6N50E1D
Abstract: G6N50E1 G6N50 HGTP6N50E1D 400v 6a transistor
Contextual Info: HGTP6N40E1D, HGTP6N50E1D d ì H a r r is \MÌ S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Features Package JEDEC TO-220AB • 6A, 400V and 500V EMITTER • Latch Free Operation COLLECTOR GATE • T f a l l : < 1.0|iS
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hgtp6n40e1dhgtp6n50e1do-220ab50iih+4g6n50e1dg6n50e1g6n50400v 6a transistor
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10n50c1d
Abstract: 10N50E1D 10N40E ultrafast diode 10a 300v 50E1D 10N50E1 400v 5A 1Y 10N40C1
Contextual Info: m l-L A J R F R IS tip s E M , c o N D u c T o R HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Features Package • 10A, 400V and 500V JEDEC TO-22QAB • ^CE ON ' 2.5V Max.
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hgtp10n40c1dhgtp10n40e1dhgtp10n50c1dhgtp10n50e1d+10o-22qaban725410n50c1d10n50e1d10n40eultrafast diode 10a 300v50e1d10n50e1400v 5a 1y10n40c1
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bu 450 GDF
Abstract: SMA marking code LG sma marking code kn marking sm DO-214AA lg73 J15A marking sm marking SM 98 sma MARKING mp BQ 714
Contextual Info: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage
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c3b04bu 450 gdfsma marking code lgsma marking code kn+7marking sm do-214aalg73j15amarking smmarking sm 98sma marking mpbq 714
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bu 450 GDF
Abstract: diode gde 78 J15A GEZ DIODE SMA marking code LG GGG 92 marking sm J11A J14A J16A
Contextual Info: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage
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c3b04bu 450 gdfdiode gde 78j15a+7gez diodesma marking code lgggg 92marking smj11aj14aj16a
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Diode GFK
Abstract: GFX DIODE BJE 80 diode Diode BFM bfm 2 TERMINAL DIODE GGT DIODE Diode GEG Diode GFK 42 bem diode GEZ DIODES
Contextual Info: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction
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do-214abdiode gfkgfx diodebje 80 diode+7diode bfmbfm 2 terminal diodeggt diodediode gegdiode gfk 42bem diodegez diodes
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Contextual Info: HARRIS SEIUCON» SECTOR bö E B M3D2S71 G0 S0 2? i » 72T HHAS HARRIS HGTH12N40C1D, HGTH12N40E1D s E M , c o N D u c T o R HGTH12N50C1D, HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features •
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m3d2s71hgth12n40c1dhgth12n40e1dhgth12n50c1d+6hgth12n50e1do-218ac40e1d/50e1dd/50c1dan7254an7260
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GEK DIODES
Abstract: Diode GFK Diode BFX 514 GEZ DIODES BDP 282 DIODE BFM DIODE BFT marking code GGP DIODE MARKING GEK GFX DIODE
Contextual Info: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction
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do-214abgek diodesdiode gfkdiode bfx 514+7gez diodesbdp 282diode bfmdiode bft marking codeggp diodemarking gekgfx diode
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GFM, TVS
Abstract: GHR TVS marking ghm 1.5SMCJ Series marking GEY marking GFQ marking BGG tvs TVS GGV bfu 450 c BFU 450
Contextual Info: World Products Inc. 19654 8th St. East, Sonoma, CA, USA, 95476 . . Phone: 707 996-5201 . . Fax: (707) 996-3380 TVS Diodes - Surface Mount - 1500 Watt Specifications - 1.5SMCJ Series Electrical Characteristics Part Number* 1.5SMCJ5.0 1.5SMCJ5.0A 1.5SMCJ6.0
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5smcj105smcj10a5smcj115smcj11a+165smcj125smcj12a5smcj135smcj13a5smcj145smcj14agfm, tvsghr tvsmarking ghm1.5smcj seriesmarking geymarking gfqmarking bgg tvstvs ggvbfu 450 cbfu 450
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marking code BFK
Abstract: GFX DIODE Diode GFK DIODE BJE gfp 35 GFM 78 GGT DIODE ON on 440 gex diode BFR 30 transistor GFK 77
Contextual Info: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction
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do-214abmarking code bfkgfx diodediode gfk+7diode bjegfp 35gfm 78ggt diode onon 440 gex diodebfr 30 transistorgfk 77
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general semiconductor marking code GFX
Abstract: GENERAL SEMICONDUCTOR MARKING bfm SMCG188A GENERAL SEMICONDUCTOR MARKING gfr E1367 GDM 3-17 BFM LF gfx 83 SMCG14A general semiconductor marking code GER
Contextual Info: SMCG5.0A thru SMCG188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Supressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional
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smcg188cado-215abj-std-0202002/95/ec+122002/96/ec11-mar-11general semiconductor marking code gfxgeneral semiconductor marking bfmsmcg188ageneral semiconductor marking gfre1367gdm 3-17bfm lfgfx 83smcg14ageneral semiconductor marking code ger
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GENERAL SEMICONDUCTOR MARKING bfm
Abstract: general semiconductor marking code GFX 9AT1 transzorb marking code GEM BFR 90
Contextual Info: SMCG5.0A thru SMCG188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • • • • • • • • Low profile package Ideal for automated placement Glass passivated chip junction Available in uni-directional and bi-directional
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smcg188caj-std-020aec-q101do-215ab+82011/65/eu2002/95/ec12-mar-12general semiconductor marking bfmgeneral semiconductor marking code gfx9at1transzorb marking code gembfr 90
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