GENERAL SEMICONDUCTOR MARKING SJ SMA Search Results

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

Contextual Info: TOSHIBA 1SV228 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 2 8 Unit in mm ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • • Low rs : rs = 0.3O Typ. Small Package M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage

Contextual Info: TO SHIBA 1 SV 217 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 1 7 CATV TUNING. U nit in mm • High Capacitance Ratio : C 2 V /C 2 5 V = 12.5 Typ. • Excellent C-V Characteristics, and Small Tracking Error. 1.25 • + 0.2 0. -

GENERAL SEMICONDUCTOR MARKING SJ SMA

Abstract: MARKING CODE TL DO-214AC general semiconductor MARKING SJ SMA MARKING S1G semiconductor band color code GENERAL SEMICONDUCTOR MARKING sg A4075 SM1000
Contextual Info: S1A thru S1M Vishay Semiconductors formerly General Semiconductor Surface Mount Glass Passivated Rectifier Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band Mounting Pad Layout 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25)

GENERAL SEMICONDUCTOR MARKING SJ SMA

Abstract: SMA MARKING S1G S1G HE3 marking SM DO-214AC MARKING CODE TL DO-214AC VISHAY MARKING SJ SMA s1m marking code MARKING CODE S1M SMA SMA MARKING S1J S1M HE3
Contextual Info: S1A thru S1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 40 A, 30 A IR 1.0 µA, 5.0 µA VF 1.1 V Tj max. 150 °C DO-214AC (SMA) Features Mechanical Data • •

88710

Abstract: s07j Do219AB marking code sg S07G VISHAY MARKING SG DO-219AB S07B S07D S07J S07M
Contextual Info: S07B thru S07M Vishay Semiconductors New Product formerly General Semiconductor Small Surface Mount Rectifier Forward Current 0.7A Reverse Voltage 100 to 1000V DO-219AB SMF Cathode Band Top View 1.8 ± 0.1 1.0 ± 0.2 2.8 ± 0.1 5° Detail Z enlarged 0.00 – 0.10

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

Contextual Info: B5817WS/B5818WS/B5819WS Taiwan Semiconductor Small Signal Product SOD-323 20~40V/1A Schottky Diode FEATURES - Surface mount device type - Moisture sensitivity level 1 - Pb free and RoHS compliant - Low Forward Voltage Drop - General purpose rectification application

Contextual Info: B5817WS/B5818WS/B5819WS Taiwan Semiconductor Small Signal Product SOD-323 20~40V/1A Schottky Diode FEATURES - Low Forward Voltage Drop - Surface mount device type - Moisture sensitivity level 1 - Pb free and RoHS compliant MECHANICAL DATA SOD-323 - Case: Bend lead SOD-323 package

GENERAL SEMICONDUCTOR MARKING SJ SMA

Abstract: VISHAY MARKING SG SMA SMA MARKING S1J marking aj aj rectifier
Contextual Info: S1A thru S1M Vishay Semiconductors formerly General Semiconductor Surface Mount Glass Passivated Rectifier Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band Mounting Pad Layout 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25)

GENERAL SEMICONDUCTOR MARKING SJ SMA

Abstract: VISHAY MARKING SG SMA s1m marking code SMA MARKING S1G VISHAY MARKING SG VISHAY MARKING SJ SG 27 surge current MARKING S1 SMA MARKING S1d VISHAY S1M
Contextual Info: S1A thru S1M Vishay Semiconductors formerly General Semiconductor Surface Mount Glass Passivated Rectifier Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band Mounting Pad Layout 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25)

NA42

Contextual Info: 1SV303 TOSHIBA TENTATIVE TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 303 CATV TUNING • • • U nit in mm High Capacitance Ratio : C%sj! C2 5 V = 17.5 Typ. Low Series Resistance : rs = 1.05Q (Typ.) Useful for Small Size Tuner.

Contextual Info: TOSHIBA TENTATIVE 1SV302 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV3 0 2 CATV TUNING C%sj! C2 5 V = 17.5 • High Capacitance Ratio : • Low Series Resistance : rs = 1.05Q Typ. • Useful for Small Size Tuner. U nit in mm (Typ.)

VISHAY MARKING SG SMA

Abstract: GENERAL SEMICONDUCTOR MARKING SJ SMA S1G HE3 VISHAY S1M S1M e3 AJ-10 JESD22-B102D J-STD-002B SG 27 surge current
Contextual Info: S1A thru S1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 40 A, 30 A IR 1.0 µA, 5.0 µA VF 1.1 V Tj max. 150 °C DO-214AC (SMA) Features Mechanical Data • •

GENERAL SEMICONDUCTOR MARKING SJ SMA

Abstract: VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band Vishay Part Number

3SK264

Abstract: EN4901A bx-1489
Contextual Info: 3SK264 Ordering number : EN4901A SANYO Semiconductors DATA SHEET 3SK264 N-Channel Silicon MOSFET VHF Tuner, High-Frequency Amplifier Applications Features • • • • Enhancement type Easy AGC Cut off at VG2S=0V Small noise figure Excels in cross modulation characteristics

54f164admqb

Contextual Info: 54F 74F164A Serial-In Parallel-Out Shift Register General Description Features The ’F164A is a high-speed 8-bit serial-in parallel-out shift register Serial data is entered through a 2-input AND gate synchronous with the LOW-to-HIGH transition of the clock

Contextual Info: 54F 74F378 Parallel D Register with Enable General Description Features The ’F378 is a 6-bit register with a buffered common Enable This device is similar to the ’F174 but with common Enable rather than common Master Reset Y Y Y Y Y Commercial Military

74F169PC

Contextual Info: 54F 74F169 4-Stage Synchronous Bidirectional Counter General Description Features The ’F169 is a fully synchronous 4-stage up down counter The ’F169 is a modulo-16 binary counter Features a preset capability for programmable operation carry lookahead for

VISHAY MARKING CODE

Abstract: Vishay DaTE CODE GENERAL SEMICONDUCTOR MARKING EG SMB Part marking MBL104S
Contextual Info: PDD Marking www.vishay.com Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band

Contextual Info: FCH47N60N N-Channel SupreMOS MOSFET 600 V, 47 A, 62 m Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from

FCA76N60N

Abstract: SJ 76 A DIODE
Contextual Info: FCA76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features Description • RDS on = 28 mΩ (Typ.)@ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next • Ultra Low Gate Charge (Typ. Qg = 218 nC) generation of high voltage super-junction (SJ) technology

Contextual Info: FCA16N60N N-Channel SupreMOS MOSFET 600 V, 16 A, 199 mΩ Features Description • RDS on = 170 mΩ (Typ.) @ VGS = 10V, ID = 8 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from

SERDES

Abstract: fch47n60n 511 MOSFET
Contextual Info: FCH47N60N N-Channel SupreMOS MOSFET 600 V, 47 A, 62 mΩ Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from