3SK264 Search Results

3SK264

Abstract: EN4901A bx-1489
Contextual Info: 3SK264 Ordering number : EN4901A SANYO Semiconductors DATA SHEET 3SK264 N-Channel Silicon MOSFET VHF Tuner, High-Frequency Amplifier Applications Features • • • • Enhancement type Easy AGC Cut off at VG2S=0V Small noise figure Excels in cross modulation characteristics

ENN4901

Abstract: 3SK264
Contextual Info: Ordering number:ENN4901 N-Channel Silicon MOSFET 3SK264 VHF Tuner, High-Frequency Amplifier Applications Features Package Dimensions • Enhancement type. · Easy AGC Cut off at VG2S=0V . · Small noise figure. · Excels in cross modulation characteristics.

3SK264

Abstract: ITR02882 ITR02883 ITR02884 ITR02885 ITR02886 ITR02887 ITR02888 bx-1489
Contextual Info: 注文コード No. N 4 9 0 1 3SK264 No. N4901 70999 3SK264 特長 N チャネル MOS 形シリコン電界効果トランジスタ VHF チューナ高周波増幅用 ・エンハンスメントタイプである。 ・AGC が簡単にできる VG2S=0V でカットオフ 。

2SK264

Abstract: 2SK264 sanyo 3SK264 NG4901
Contextual Info: Ordering number:EN4901 3SK264 No.4901 N-Channel MOS Silicon FET VHF Tuner, High-Frequency Amp Applications F eatures •Enhancement type. • Easy AGC Cut off at VG2S = 0V . • Small noise figure. • Excels in cross modulation characteristics. A b solu te M aximum R atings atTa = 25°C

K932

Abstract: k536 k242 K2969 A1764 A1815 K543 c2814 C4519 c4432
Contextual Info: SANYO CP |:CP4. Unmarked:CP V \ CEO ic \ v raA) \ ♦¡D arlington Type t r a n s i s t o r s \ 8 6 10 12 15 16 18 2 0 25 4 0 4 5 5 0 6 0 1 0 0 1 6 0 C4854 C4855 1 K771 2 0 C4364 3SK263I 1 3SK264 1 C5275 C5276# 3 0 5 0 C5227 C3774 C5228I 7 0 K2867 K3072

Contextual Info: Ordering number : EN4901B 3SK264 N-Channnel Dual Gate MOSFET http://onsemi.com 15V,30mA,PG=23dB,NF=1.1dB, CP4 Features • • • • Enhancement type Easy AGC Cut off at VG2S=0V Small noise figure Excels in cross modulation characteristics Specifications

Contextual Info: Ordering number : EN4901A 3SK264 N-Channnel Dual Gate MOSFET http://onsemi.com 15V,30mA,PG=23dB,NF=1.1dB, CP4 Features • • • • Enhancement type Easy AGC Cut off at VG2S=0V Small noise figure Excels in cross modulation characteristics Specifications

sb30-03p

Abstract: 3SK181 DSE015 3SK189
Contextual Info: SAfÊYO L,i s t s a n d 2SJ.3SK type, T y p e No. ma r k i ng 2 S J 187 .1 A 2 S J 19 0 J B 2 S J 19 3 .1 c A M 2 S J 284 B M 2 SJ 285 C M 2 SJ 286 2SJ287 J D 2 SJ 288 J E 2SJ289 J F 2SJ316 .1 G 2 SJ 3 3 5 J H 2SJ381 J I 3SK180 3SK181 3SK189 3SK248 3SK251

c3807

Abstract: C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986
Contextual Info: sa H yo ^ Qui c = V < S ö 1ect 1on Gu 1de S P A \ v \ ÇE0 i cx v m A )\ 1 1 0 2 0 1 5 1 8 5 0 K7 1 5 K2 0 7 4 K2 3 9 5 2 5 K1 5 7 8 K212 K3 1 5 K4 0 4 K4 2 7 K444 K2270 3 0 2 0 C4 4 3 3 5 7 0 0 8 0 0 A1765 C4 4 5 4 B8 0 8 D10 12 B12 9 6 D19 3 6 3 0 K3 0 4

c5227

Abstract: C4858 C5226 C4864 C4406 c4407 2SC5228 2SC4364 SC3778 2sc4858
Contextual Info: SA0YO VERY HIGH-FREQUENCY TRANSISTORS FOR CATV TV TUNER,VTR USE. 1 . C A T V G o n V ö i-t Q i- *:New products Type No. U s e M C P RF Amp MIX , (2 S is o m itte d ) C P 4 C P N P C 4404,C4856*, C4863* C3774.C4857*, C4864* C4858*.C4865* C3778 C5226*

2SK2335

Contextual Info: I n t r o d u c t i o n of H i g h - F r e q u e n c y D e v i c e s AM. RM Tuner* C ase O u t l i n e s u n it:m m F o r TRs SANYO:MCP , 1 '-Base, 2:Emi t t e r , 3 : C o l l e c t o r ; R * n~ ANT 1C AM o s e FM u s e ♦ R F Amp L A I 1 37 L AI 1 9 3

J289

Abstract: 3SK266 2SK1728 3sk251 DS-17 SANYO
Contextual Info: SAftYO Small-signal MOSFETs Feat, u r e s ♦ Very low noise figure * Large IYf s I * Low gate leak current Sma11-sized package permitting FET-used sets to be made smaller Case Out 1inesiunit:mm SANYO:CP4 x Lr Amp, Low Noise, Analog Switch Impedance Conversion Applications

k669 transistor

Abstract: k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546
Contextual Info: SAfÊYO Small-signal Junction FETs/MOSFETs F e a tu re s Case O u tlin e s unit.'m m SANYO:SMCP 1 : S ource, 2 : Drá i n, 3 : Ga te * V e r y low n o is e f ig u r e * L arge |Y f s | * Low g a te le a k c u r r e n t * S m a ll-s iz e d package p e r m ittin g FET-used s e t s to be made s m a lle r

mosfet HF amplifier

Abstract: 3SK266 2sk2073 2SK931 2SA1688 2SA1857 2SA1863 2SC4399 2SC4400 2SC4432
Contextual Info: TRANSISTORS H ig h -F re q u en cy T ra n s is to rs Absolut« maximum ratings Device Package AppHeaiiens ir* mA VCBO ; » geo r X a o <VJ ! (V) I (V) PC (mW) Electrical characteristics (T, = 25 °C) I I leso max @ Vcb Ti I 2SA1863* SMCP HF amplifier 15

RD2004

Abstract: 2SK4087 2SK4097 2sk4086 2SC5707 2sk4096 SBX201C 2SC5706 2sk3615 half-bridge power supply
Contextual Info: ディスクリートデバイス 2009-4 三洋ディスクリートデバイス 環境に配慮した三洋ディスクリートデバイス ECoP R ディスクリートデバイスExPD パワーデバイス）は、 様々な分野の機器の小型化・薄型化・高効率化・高信頼性化に

mosfet HF amplifier

Abstract: Hf amplifier 200T
Contextual Info: TRANSISTORS High-Frequency Transistors Absolut* maximum rating* tm Application* 2SA1863* SMCP HF amplifier 2SC4918* SMCP HF amplifier 2SA1857 MCP 2SC4400 MCP 2SC4399 Vceo Í »CEO W ! V i 12 15 ifl «fetO (V) (mA) PC (mW) Electrical characteristics (T, = a

inverter in 12v DC to 220v AC 400w circuit diagrams

Abstract: step down chopper tv tube charger circuit diagrams 220v 300w ac regulator circuit 2SC5707 equivalent RD2004 2sc6096 ech8 pattern 2sc5707 Flyback Transformers SANYO TV
Contextual Info: Discrete Devices 2009-5 SANYO Discrete Devices SANYO's environmentally-considered discrete ECoP contributes to the realization of comfortable life in various aspects. Discrete devices and ExPDs power device are environmentally-considered products that well address the needs (small size, low profile, high efficiency & high reliability)

Flyback Transformers SANYO TV

Abstract: RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams
Contextual Info: Discrete Devices 2010-8 Mobile Equipment • Application Block ■ Charger [GSM, UMTS] Charger DC-DC Converter / Load SW P3 Down Converter Low end P6 5 to 6V 0.5 to 1A CPU AC Adapter AC Adapter [CDMA2000] Q2 Q3 +B D2 Q1 System AC Adapter RF Block Down Converter (High end)

Contextual Info: TRANSISTORS High-frequency Transistors Absolute maximum ratings Type No. Package type Electrical characteristics Ta » 251C iCBOmax @ VCB Applications VCBO (V) VCEO (V) Vebo (V) 1C (A) PC CW) (? ) ICBO max ( * A) hFE @ VCE •1C VCB (V) VCE (V) hFE fr@ VCE- ic

c4460

Abstract: d1651 d1047 k d1047 B817 C2621 D1650 B1269 c4106 D895
Contextual Info: SA\YO ^ Q u i c k S e 1 e c t i o n G u i d S P A CEO I > < V 1 5 1 8 2 K 11 K5 9 K15 K2 1 K3 1 K4 0 3 1 6 78 2 5 4 A 11 C28 C2 9 K5 4 77 39 99 4 2 5 Type T ransistors 3 4 «¡D a rlin g to n 5 8 mA ) 1 2 K4 2 7 K4 4 4 5 K546 K7 7 2 K2 2 7 0 3 K3 0 4

J289

Abstract: K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311
Contextual Info: Small-signal Features MOS FETs ♦ Very low noise_ figure * Large _ |Yfs| # Low gate leak current * Small-sized packageipermitting — ' i ♦ FET-used sets to be made, smaller Case Oct 1in.es /uni I.:a SANYO :C:'4 sjc LF Amp, Low Noise, Analog Switch Impedance Conversion Applications