GEM 88 DIODE Search Results

lucent laser 1550

Abstract: etalon locker GEM 88 DIODE lucent tunable laser diode GEM laser wavelength locker E2532 eml dfb laser diode 1550 lucent 1550 nm
Contextual Info: Advance Data Sheet August 1999 E2530-Type Stabilized, Tunable EML Modules Applications • ■ SONET/SDH extended-reach applications Very dense WDM ≤50 GHz channel spacing extra long-haul and metropolitan applications ■ High-speed data communications

Contextual Info: □ IX Y S Advanced Technical Information IXSK 40N60CD1 IXSX 40N60CD1 IGBT with Diode PLUS247 package ^fi typ V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C, limited by leads

P 1010

Abstract: AL 102 074d
Contextual Info: □IXYS Advanced Technical Information IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode PLUS247 package ^fi typ Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C, limited by leads

Contextual Info: XYS IGBT with Diode vC E S IXSK 50N60AU1 ^C 25 v C E sat = 600V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings v CES T j = 25°C to 150°C 600 V v CGR T j = 25°C to 150°C; RQE = 1 600 V v GES Continuous ±20 V v GEM

80n60

Abstract: O M 335 80N60B PF650
Contextual Info: Advance Technical Information IGBT with Diode IXSN 80N60BD1 Short Circuit SOA Capability VCES IC25 VCE sat = 600 V = 160 A = 2.5 V C G E E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 A

Contextual Info: a ix Y S P re lim in a ry D ata S heet IGBT with Diode IXSN 62N60U1 V CES IC25 Combi Pack ^ C E s a t = 600 V = 90 A = 2.5 V Short Circuit SOA Capability Symbol Test Conditions v CES ^ V CGR Maximum Ratings = 25 °C to 150°C 600 V T j = 25 °C to 150°C; RGE = 1 M£2

ixsn35n100au1

Contextual Info: 4bflbEEb GGanL»? D34 IIX Y nixYS IXSN35N100AU1 PRELIMINARY D ATA SHEET IGBT miniBLOC with Diode C 25 <TÎ VC ES T e s t C o n d itio n s VcES T j =25°C to 150°C 600 V v CGR T,J = 25°C to 150°C; RIjc „ = 1 MQ 600 V VOES C ontinuous ±20 V v GEM Transient

Contextual Info: High Voltage IGBT with Diode IXSK35N120AU1 V, CES IC25 v CE sat 1200 V 70 A 4V Short Circuit SOA Capability Preliminary data Symbol Test Conditions VCES VCGR v GES v GEM T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; R GE = 1 MQ 1200 V Maximum Ratings

3un6

Contextual Info: 'O I 1 Advanced Technical Information wvv.wkvi'w^v.sv.v.viv.v.viv.v.viv.v.viv.v.v. IXGH 30N60BD1 IXGT 30N60BD1 IGBT with Diode V CES = 600 V = 60 A = 1.8 V = 100 ns ^C25 V CE sat

C7650

Abstract: 40n60b TYP 513 309 40N60BD1
Contextual Info: n ix Y S Advanced Technical Information IGBT with Diode IXSK 40N60BD1 IXSX 40N60BD1 PLUS247 package v CES ^C25 VCE sat Short Circuit SOA Capability oc g n r ^fi(typ) = 600 V = 75 A = 2.2 V = 120 ns * ] ÔE Symbol Test Conditions V CES Tj =25°Cto150°C

ixsn35n100au1

Contextual Info: 4feflfc>2Sb OOOITM? D3M • IXY n ix Y S IXSN35N100AU1 PRELIMINARY DATA SHEET IGBT miniBLOC with Diode C 25 VC ES i f V C E sat S ym bol T e s t C o n d itio n s V CES T j =25°C to 150°C 600 V vCGR T , = 25°C to 150°C; R „ = 1 MQ 600 V V GES C ontinuous

80N60AU1

Abstract: IXYS IGBT
Contextual Info: IXYS IGBT with Diode IXSN 80N60AU1 v CES ^C25 v CE sat = 600 V = 160 A = 3V oC Short Circuit SO A Capability G P relim inary data 04E Symbol Test Conditions V CES Tj - 25°C to 150°C 600 V v*C G R v GES v GEM Tj = 25CC to 150°C; RGE = 1 M ii 600 A Maximum Ratings

f6 oa

Contextual Info: □ IXYS IGBT with Diode IXSK 50N60BU1 IXSX 50N60BU1 V CES = 600 V = 75 A = 2.5 V ^C25 V CE sat Short Circuit SOA Capability PLUS247 (IXSX) Maximum Ratings Symbol Test C onditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600

Contextual Info: □ IXYS Advanced Technical Information IXGH 31N60D1 IXGT 31N60D1 Ultra-LowVCE sat IGBT with Diode V CES = 600 V = 60 A = 1.7 V ^C25 V CE(sat) Combi Pack Symbol Test Conditions Maximum Ratings V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i

Contextual Info: nixYS IGBT with Diode IXSN 80N60AU1 V CES = 600 V I = 160 A = 3 V C25 v CE sat Combi Pack Short Circuit SOA Capability Preliminary data Symbol Test Conditions v CES Td = 25°C to 150°C 600 V V CGH Tj = 25°C to 150°C; RGE = 1 M n 600 A V GES Continuous

ix6h

Contextual Info: PIXYS Hi Per FAST IGBT with Diode IXGH 22N50BU1 CES *C<25 VCE sat)typ ^fi(typ) 500 V 44 A 2.1 V 55 ns Preliminary data Symbol Test Conditions VCES v CGR ^ = 25° C to 150° C T, = 25° C to 150° C; RGE= 1 MQ 500 500 V V VGES v GEM Continuous T ransient

dc servo igbt

Contextual Info: n i x Y S IGBT with Diode IXSN 80N60AU1 VCES I C25 vv CE sat 600 V 160 A 3V Short Circuit SOA Capability Preliminary data Symbol Maximum Ratings Test Conditions v CES T j = 25° C to 150° C 600 V vt c g r T j = 25° C to 150° C; RG6 = 1 M£2 600 A V G ES

Contextual Info: QIXYS IGBT with Diode IXSN 52N60AU1 VCES I C25 vCE sat Combi Pack = 600 V = 80 A = 3V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V v CGR T, = 25°C to 150°C; RGE = 1 Mi2 600 A V GES Continuous +20 V

Contextual Info: □IXYS IGBT with Diode IXSK 50N60AU1 VC E S I Combi Pack = 600 V = 75 A = 2.7 V C 25 V C E sat Short Circuit S O A Capability ?C G OE Sym bol T est C onditions V CES T j = 25°C to 150°C 600 V VCGR T.J = 25°C to 150°C; Rrp = 1 M£2 Cat 600 V M axim um Ratings

mj 340

Abstract: MJ340 IXSK50N60AU1 D-68623 50N60AU1
Contextual Info: IGBT with Diode IXSK 50N60AU1 VCES IC25 VCE sat Combi Pack = 600 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM

Contextual Info: ! a i x Y S Preliminary data V CES IXSX50N60AU1 IXSX50N60AU1S IGBT with Diode ^C25 vw CE sat Combi Pack <?C S h o r t C ir c u it S O A C a p a b ilit y = 600 V = 75 A = 2.7 V TO-247 Hole-less SMD (50N60AU1S) G OE Symbol Test Conditions V CES T j = 25°C to 150 °C

TAG 881

Contextual Info: Preliminary data IXSX50N60AU1 IXSX50N60AU1S IGBT with Diode Combi Pack Short Circuit SOA Capability T 0 - 2 4 7 H o le-less SM D 5 0 N 6 0 A U 1 S Sym bol T e s t C o n d itio n s v CES Tj = 25°C to 150°C 600 V v CGR T ,j = 25°C to 150°C ;' RrF = 1 MO

T 3512 H diode

Abstract: diode T 3512 H ds 35-12 e 35-12A7
Contextual Info: □IXYS MWI 35-12 A7 Advanced Technical Information IGBT Modules Sixpack IC25 v ces = 62 A = 1200 V V C E s a t ty p . = 2 . 2 V Symbol Conditions Maximum Ratings V CES Tj = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 20 k£i 1200 V V GES Continuous

18l0015wh

Abstract: 18L0012WH 9L11XPB015S Heavy Duty Distribution Arresters 9L20 18L0065WH relay 04501 9L15ECC001 0-650 VAC 3 Pole 18L0009WH 54L514 GED-7060A
Contextual Info: Capacitors, Arresters and Harmonic Filters Line/Load Reactors—up to Line/Load Reactors—Three-phase Reactors .20-4 Matrix Series D Harmonic Filters .20-6