GEM 88 DIODE Search Results

lucent laser 1550

Abstract: etalon locker GEM 88 DIODE lucent tunable laser diode GEM laser wavelength locker E2532 eml dfb laser diode 1550 lucent 1550 nm
Contextual Info: Advance Data Sheet August 1999 E2530-Type Stabilized, Tunable EML Modules Applications • ■ SONET/SDH extended-reach applications Very dense WDM ≤50 GHz channel spacing extra long-haul and metropolitan applications ■ High-speed data communications

Contextual Info: □ IX Y S Advanced Technical Information IXSK 40N60CD1 IXSX 40N60CD1 IGBT with Diode PLUS247 package ^fi typ V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C, limited by leads

Contextual Info: a ix Y S P re lim in a ry D ata S heet IGBT with Diode IXSN 62N60U1 V CES IC25 Combi Pack ^ C E s a t = 600 V = 90 A = 2.5 V Short Circuit SOA Capability Symbol Test Conditions v CES ^ V CGR Maximum Ratings = 25 °C to 150°C 600 V T j = 25 °C to 150°C; RGE = 1 M£2

ixsn35n100au1

Contextual Info: 4bflbEEb GGanL»? D34 IIX Y nixYS IXSN35N100AU1 PRELIMINARY D ATA SHEET IGBT miniBLOC with Diode C 25 <TÎ VC ES T e s t C o n d itio n s VcES T j =25°C to 150°C 600 V v CGR T,J = 25°C to 150°C; RIjc „ = 1 MQ 600 V VOES C ontinuous ±20 V v GEM Transient

3un6

Contextual Info: 'O I 1 Advanced Technical Information wvv.wkvi'w^v.sv.v.viv.v.viv.v.viv.v.viv.v.v. IXGH 30N60BD1 IXGT 30N60BD1 IGBT with Diode V CES = 600 V = 60 A = 1.8 V = 100 ns ^C25 V CE sat

Contextual Info: □ IXYS Advanced Technical Information IXGH 31N60D1 IXGT 31N60D1 Ultra-LowVCE sat IGBT with Diode V CES = 600 V = 60 A = 1.7 V ^C25 V CE(sat) Combi Pack Symbol Test Conditions Maximum Ratings V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i

Contextual Info: □IXYS HiPerFAST IGBT with Diode V CES IXGT 20N60BD1 ^C25 V CE sat typ ^fi(typ) = 600 V 40 A = 1.7 V 100 ns ” Preliminary data sheet Maximum Ratings Symbol Test C onditions V CES T j = 25°C to 150°C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 600

Contextual Info: nixYS IGBT with Diode IXSN 80N60AU1 V CES = 600 V I = 160 A = 3 V C25 v CE sat Combi Pack Short Circuit SOA Capability Preliminary data Symbol Test Conditions v CES Td = 25°C to 150°C 600 V V CGH Tj = 25°C to 150°C; RGE = 1 M n 600 A V GES Continuous

Contextual Info: QIXYS IGBT with Diode IXSN 52N60AU1 VCES I C25 vCE sat Combi Pack = 600 V = 80 A = 3V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V v CGR T, = 25°C to 150°C; RGE = 1 Mi2 600 A V GES Continuous +20 V

Contextual Info: □IXYS IGBT with Diode IXSK 50N60AU1 VC E S I Combi Pack = 600 V = 75 A = 2.7 V C 25 V C E sat Short Circuit S O A Capability ?C G OE Sym bol T est C onditions V CES T j = 25°C to 150°C 600 V VCGR T.J = 25°C to 150°C; Rrp = 1 M£2 Cat 600 V M axim um Ratings

Contextual Info: ! a i x Y S Preliminary data V CES IXSX50N60AU1 IXSX50N60AU1S IGBT with Diode ^C25 vw CE sat Combi Pack <?C S h o r t C ir c u it S O A C a p a b ilit y = 600 V = 75 A = 2.7 V TO-247 Hole-less SMD (50N60AU1S) G OE Symbol Test Conditions V CES T j = 25°C to 150 °C

TAG 881

Contextual Info: Preliminary data IXSX50N60AU1 IXSX50N60AU1S IGBT with Diode Combi Pack Short Circuit SOA Capability T 0 - 2 4 7 H o le-less SM D 5 0 N 6 0 A U 1 S Sym bol T e s t C o n d itio n s v CES Tj = 25°C to 150°C 600 V v CGR T ,j = 25°C to 150°C ;' RrF = 1 MO

T 3512 H diode

Abstract: diode T 3512 H ds 35-12 e 35-12A7
Contextual Info: □IXYS MWI 35-12 A7 Advanced Technical Information IGBT Modules Sixpack IC25 v ces = 62 A = 1200 V V C E s a t ty p . = 2 . 2 V Symbol Conditions Maximum Ratings V CES Tj = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 20 k£i 1200 V V GES Continuous

Stassfurt Colortron

Abstract: colortron service-mitteilungen robotron service mitteilungen rft service mitteilung RFT lautsprecher RFT Dioden VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN servicemitteilungen rft
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U ST R IE V E R T R IE B R U N D FU N K UND F E R N S E H E N r a d i o - teievislon Aug./Sept 1980 ISSI SEITE 1-6 Reue Farbfernsehgeräte vom VEB FSGW Staßfurt Ss «erden eine Reihe neuer Farbfernsehgerätetypen produziert, die

40n60 transistor

Abstract: 30N60 40n60 30N60A 40n60 igbt 17N10 wiom DC transistor JE 1090 20N60A igbt equivalent to 40n60
Contextual Info: MbE D • Mb S b S E b OO O O S T M T «IXY I X V S CORP T □IX Y S I V I S Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features • • • Guaranteed Short Circuit Capability SCSOA Optimized for 60Hz to 30kHz Switching

bgy 53

Contextual Info: SMCJ5.0 thru SMCJ170CA 1500 Watt Surface Mount TVS TEL: 805-498-2111 DESCRIPTION FEATURES: The SMCJ series of transient voltage suppressors are designed to protect components from transient voltages caused by lightning, electrostatic discharge ESD , electrical fast transients (EFT), inductive load

tb therm

Abstract: 3 phase ups schematic diagram ELANTEC 5102
Contextual Info: -• ' hff.‘im w ic r a u ;os iNTrs'rrr;C'Ac:j:TS ELH0101/883/8508901/2YX Power Operational Am plifier Features General Description • 5A peak, 2A continuous output current • 10 V/jLis slew rate • 300 kHz power bandwidth • 850 mW standby power ± 15V

b3170

Abstract: B 3170 schlenzig B3170V "halbleiterwerk frankfurt" electronica reihe B3371 LM 3171 B3171V electronica band
Contextual Info: »Uxe Strom­ versorgung Referenzquelle Le/stungs- und UberstromBegrenzung, Temperaturschutz verstarker electrónica • Band 239 KLAUS SCHLENZ1G D IE T E R JU N G D ie in te g r ie r te n S p a n n u n g s re g le r B3x7xV M ILITÄR V E R LA G D E R D EU T SC H E N D EM O K R A TISC H EN

DCM4 SMD

Contextual Info: ELH0101/883/8508901/2YX ELH0101/883/8508901/2YX hi:- ph’h-wkem jî •'tevi:. 1'»■.- P0W fT (JpCFQtiOTlttI A. TtipllfiCT F eatu res G eneral D escrip tion • 5A peak, 2A continuous o u tp u t cu rren t • 10 V /jas slew rate • 300 kH z pow er bandw idth

Kitronik

Abstract: GP Batteries cr2032 picaxe 14m piezo electric buzzers TDA2822M application note Raspberry Pi 3 TDA2822m s3003 SERVO 5V 2.5w solar panel 10 amp 12 volt solar charger circuits
Contextual Info: WARNING: MAY CONTAIN 2013/2014 INSPIRATION DESIGN & TECHNOLOGY CATALOGUE NEW KITS, COMPONENTS, MATERIALS AND MUCH MORE kitronik.co.uk 002 WELCOME TO KITRONIK Kitronik specialise in interesting electronic project kits for secondary design & technology lessons.

EM- 546 motor

Contextual Info: HGTD1N120BNS, HGTP1N120BN Data Sheet February 1999 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar

KYS 30 40 diode

Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
Contextual Info: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching

transistor c3150

Abstract: c3271 KEMA KEUR thermostat C4108
Contextual Info: What’s New? E X PA N D E D C O M P E T I T I V E O F F E R I N G S Cross-Reference & Online Spec Sheets We have expanded our Carol Brand Electronics offering and now have more competitive crosses than anyone. Many of these cables are in stock and ready for

BY236

Abstract: BY235 d25n12 PBY285 KD202A D237A D223B diode drr204 Diode D25N4 PBY267
Contextual Info: a m a t e u m Lars Grallert Diodenvergleichsliste p e U ie 247 electrónica •Band 247 LA R S G R A L L E R T Diodenvergleichsliste M ILITÄ R V E R L A G D ER D EU TSCH EN D EM OKRATISCH EN R EP U B L IK G r a lle r t, L . : D io d e n v e rg le ic h s liste . B e r lin : M ilitä rv e rla g d e r D D R V E B , 1 9 9 0 . 112 S ., 127 B ild e r - ( e le c tr ó n ic a 2 4 7 )