GE-20 TRANSISTOR Search Results

sot231a

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D102 PBSS5140U 40 V low VCEsat PNP transistor Product specification Supersedes data of 2001 Mar 27 2001 Jul 20 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140U FEATURES QUICK REFERENCE DATA

ge d44h11

Abstract: D44* general electric npn to-220 D44H5 D44Hll D44H1 D44H2 D44H4 D44H7 D44H8 D45H1
Contextual Info: SILICON POWER TRANSISTORS 229 KP COMPLEMENTARY - 10 AMPERES Pt T c = 2 5°C GE Type NPN V CEO Min. V •c Cont. (A I 50 30 50 PNP M in. M in. 10 35 20 -3 0 -1 0 35 20 50 30 10 60 40 50 —30 ■10 60 40 50 45 10 35 20 <W) D44H1 - D45H1 D 44 H 2 - D 45H 2

Contextual Info: 2N2552 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)20# Maximum Operating Temp (øC)100# I(CBO) Max. (A)125u @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)1.0

Contextual Info: GFT3008/20 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)75õ I(CBO) Max. (A).50m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: GFT3408/20 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)75õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

photo interrupter module h13a1

Abstract: H13A1 photo interrupter module DT230B GE SCR 1000 H11C1 4N38 4N38A H11A10 H11AA1
Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H 11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 ID nA MAX. BVc e o (VOLTS) MIN. 50 30 I I 100 200 30 30 20'ä I 20% 20% 10% 100 100 100 100 50 50 300 300 100 100 100 100 100 100

ge d45h11

Abstract: GE D45H2 ge d44h11 D44H8 D44H5 D45H2 D44H1 D44H2 transistor d44h11 D44H7
Contextual Info: SILICON POWER TRANSISTORS 229 KP COMPLEMENTARY - 10 AMPERES Pt T c = 2 5°C GE T yp e NPN V CEO M in. V •c C o n t. (A I 50 30 50 PNP M in . M in . 10 35 20 -3 0 -1 0 35 20 50 30 10 60 40 50 —30 ■10 60 40 50 45 10 35 20 <W) D44H1 - D45H1 D 44 H 2

Contextual Info: FS 8 R 12 KF 2 Transistor Transistor Thermische Eigenschaften RthJC Thermal properties DC, pro Baustein / per module DC, pro Zweig / per arm Electrical properties Höchstzulässige W erte Maximum rated values 1200 V 8 A 16 A 80 W V ge 20 V Inversdiode Inverse diode

D40D5

Abstract: D40D7...8 D4001 D4102 tab ic D40D1 D40D2 D40D3 D40D4 D40D7
Contextual Info: SILICON POWER TRANSISTORS COMPLEMENTARY - 1 AMPERE Pt •c T c = 25°C v CEO Cont. Min. <A V) (W) GE Type NPN PNP @ 2V , h FE 100mA hFE @ 2V , 1A Min. Max. Min. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D40D2 - 6.25 30 1.0 120 360 20 - D41D2

D40E5

Abstract: D40D14 tab ic D40D5 D4102 D40D1 D40D2 D40D3 D40D4 D40D7
Contextual Info: SILICON POWER TRANSISTORS COMPLEMENTARY - 1 AMPERE Pt •c T c = 25°C v CEO Cont. Min. <A V) (W) GE Type NPN PNP @ 2V , h FE 100mA hFE @ 2V , 1A Min. Max. Min. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D40D2 - 6.25 30 1.0 120 360 20 - D41D2

tab ic

Abstract: D40D1 D40D2 D40D3 D40D4 D40D5 D40D7 D41D1 D41D2 D41D4
Contextual Info: SILICON POWER TRANSISTORS COMPLEMENTARY - 1 AMPERE Pt •c T c = 25°C v CEO Cont. Min. <A V) (W) GE Type NPN PNP @ 2V , h FE 100mA hFE @ 2V , 1A Min. Max. Min. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D40D2 - 6.25 30 1.0 120 360 20 - D41D2

Contextual Info: 40490 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)20 I(C) Max. (A)20m Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)100’ I(CBO) Max. (A)12u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: 2N2555+JAN Transistors Ge PNP Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)20# Maximum Operating Temp (øC)100# I(CBO) Max. (A)125u @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)1.0

Contextual Info: 2N649/5 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)75’ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.65 h(FE) Max. Current gain.

1307 TRANSISTOR

Abstract: H15B1 4N38-4N38A "Photo Interrupter" dual transistor 4N38 4N38A IC VS 1307 H11AA1 H11AA2 H11B2
Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% AC INPUT COUPLER H11AA1 H11AA2 1289 128? I I 20% 10% 1500 1500 ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100

Contextual Info: 2N649/22 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)180m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)14uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.65 h(FE) Max. Current gain.

photo interrupter module

Abstract: GE SCR 1000 GE SCR 1000 AMP H11C H13B1 4N38 4N38A H11A10 H11AA1 H11AA2
Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER R A TIO MIN. MIN. 1500 1 10% AC INPUT COUPLER H11AA1 H11AA2 1289 128? 1500 1500 I I 20% 10% ID nA MAX. BV c e o (VOLTS) MIN. 50 30 100 200 30 30 100 100

NJM386E

Abstract: NJM386 equivalent NJM386D NJM386
Contextual Info: L O W VOLTA GE AUDIO P O W E R A M P L I F I E R NJM386 The NJM 386 is a pow er am plifier designed for use in low voltage consum er applications. T he gain is internally set to 20 to keep external part count low, but the addition of an external resistor and capacitor betw een pins 1 and 8 will increase

marking w25 SMD

Abstract: TRANSISTOR SMD MARKING CODE W25 smd marking g23 SMD CODE w25 SMD MARKING CODE E1H smd w25 66 2310 dhi TOP 242 PN SMD TRANSISTOR MARKING 9b marking g23 SMD
Contextual Info: Da ta Sh ee t, D S 1, D ec em be r 20 01 ABM 3G A T M B uf f e r M a na ge r P XF 4 33 3 V e r s i on 1 . 1 W ir ed Co m mu n ic a ti o n s N e v e r s t o p t h i n k i n g . Edition 2001-12-17 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

PCR 406 J

Abstract: marking w25 SMD transistor pcr 406 TRANSISTOR SMD MARKING CODE W25 SMD TRANSISTOR MARKING P2 PCR 406 J transistor smd marking K23 transistor pcr 405 Motorola transistor smd marking codes marking g23 SMD
Contextual Info: Da ta Sh ee t, D S 2, D ec em be r 20 01 A B M P r e mi um A T M B uf f e r M a na ge r P XF 4 33 6 V e r s i on 1 . 1 W ir ed Co m mu n ic a ti o n s N e v e r s t o p t h i n k i n g . Edition 2001-12-17 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

ge-20 transistor

Abstract: ge-10 transistor transistor DJ marking transistor DJ 30 at GE Sensing Transistor GE 67 DJ marking DJ5GE GE-17 diagrams
Contextual Info: Proximity Sensors Inductive Nickel-plated Brass Housing Types DJ, M 14, PG 21 • Nickel-plated brass housing, cylindrical • Diameter: M 14, PG 21 • Sensing distance: 2 to 6 mm • Power supply: DJ 2 GE 24 VDC DJ 5 GE 24 VDC DJ 6 GE 10 to 40 VDC • Output: Transistor NPN, make switching

2N1029

Abstract: 2N2211 MP2145 mp2143 2SB237 2n1030 2N115 MP2143A MP2144 MP2144A
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

ESM30450V

Abstract: MJ10100 esm40450 svt6062 2S01314 solitron transistors ia5062 PTC6002 sgs-ates transistors j200
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) Po Max (W) hFE Min fT Max (Hz) ICBO Max (A) t, Max (8) tf Max Toper (8) (Oe) Max Package Style NPN Darlington Transistors, (Co nt' d) 5 10 BU922 BU922P BU922P BU922P GE6252

78m5

Abstract: PT2622 2N1841 5U100 2sc180 2N2340 S552 TO114 package 2SC23 2SC24
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T