GE-20 TRANSISTOR Search Results

113 marking code PNP transistor

Abstract: TRANSISTOR 3F t marking code 10 sot23 pnp low saturation transistor sot23 PNP POWER TRANSISTOR SOT23 PBSS5220T PBSS5230T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5220T 20 V, 2 A PNP low VCEsat BISS transistor Product specification 2003 Dec 18 Philips Semiconductors Product specification 20 V, 2 A PNP low VCEsat (BISS) transistor PBSS5220T FEATURES QUICK REFERENCE DATA

Contextual Info: FF 150 R 06 KL 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte VcES Maximum rated values 600 V 150 A 300 A 700 W V ge 20 V Inversdiode Inverse diode V eg 20 V Elektrische Eigenschaften Electrical properties

Contextual Info: FS 25 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values 600 V 25 A 50 A 100 W ge 20 V Inversdiode Inverse diode LU 20 V Elektrische Eigenschaften Electrical properties Höchstzulässige W erte

sot231a

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D102 PBSS5140U 40 V low VCEsat PNP transistor Product specification Supersedes data of 2001 Mar 27 2001 Jul 20 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140U FEATURES QUICK REFERENCE DATA

ge d44h11

Abstract: D44* general electric npn to-220 D44H5 D44Hll D44H1 D44H2 D44H4 D44H7 D44H8 D45H1
Contextual Info: SILICON POWER TRANSISTORS 229 KP COMPLEMENTARY - 10 AMPERES Pt T c = 2 5°C GE Type NPN V CEO Min. V •c Cont. (A I 50 30 50 PNP M in. M in. 10 35 20 -3 0 -1 0 35 20 50 30 10 60 40 50 —30 ■10 60 40 50 45 10 35 20 <W) D44H1 - D45H1 D 44 H 2 - D 45H 2

Contextual Info: 2N2552 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)20# Maximum Operating Temp (øC)100# I(CBO) Max. (A)125u @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)1.0

Contextual Info: GFT3008/20 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)75õ I(CBO) Max. (A).50m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: GFT3408/20 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)75õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

photo interrupter module h13a1

Abstract: H13A1 photo interrupter module DT230B GE SCR 1000 H11C1 4N38 4N38A H11A10 H11AA1
Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H 11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 ID nA MAX. BVc e o (VOLTS) MIN. 50 30 I I 100 200 30 30 20'ä I 20% 20% 10% 100 100 100 100 50 50 300 300 100 100 100 100 100 100

ge d45h11

Abstract: GE D45H2 ge d44h11 D44H8 D44H5 D45H2 D44H1 D44H2 transistor d44h11 D44H7
Contextual Info: SILICON POWER TRANSISTORS 229 KP COMPLEMENTARY - 10 AMPERES Pt T c = 2 5°C GE T yp e NPN V CEO M in. V •c C o n t. (A I 50 30 50 PNP M in . M in . 10 35 20 -3 0 -1 0 35 20 50 30 10 60 40 50 —30 ■10 60 40 50 45 10 35 20 <W) D44H1 - D45H1 D 44 H 2

sd 1651

Abstract: transistors for oscillators 1851 Selection guide of Transistors Cb28
Contextual Info: SELECTION GUIDE n* 250 SO 2LFL 2 3 0 2L F L •100 S Q 2 L F L H E R M <M138 50C C O A X 1M 144) 2 . 4 GHz MICROWAVE TRANSISTORS FOR CLASS A OPERATION T yp e P acka ge P/N C o n flg . SD H TCC 2100 TCC 20 L08 TCC 20 L 15 TCC 20 L 25 SD 1850 SD SD SD SD

Contextual Info: FS 8 R 12 KF 2 Transistor Transistor Thermische Eigenschaften RthJC Thermal properties DC, pro Baustein / per module DC, pro Zweig / per arm Electrical properties Höchstzulässige W erte Maximum rated values 1200 V 8 A 16 A 80 W V ge 20 V Inversdiode Inverse diode

transistor R74

Abstract: BFR740L3RH RF Bipolar Transistor bipolar transistor TR151 rf transistor tunnel diode RF Transistor impedance matching what is transistor rf power transistor
Contextual Info: BF R74 0L3 RH Ma xi m u m RF Inp ut Po wer of Si Ge: C Bipol ar Transisto r BFR7 40L 3 RH Technic al Rep ort T R 151 Revision: Ver 1.0 Date: 20. Auguest 2009 RF and Protecti on Devi c es Edition 20. Auguest 2009 Published by Infineon Technologies AG 81726 Munich, Germany

1BW TRANSISTOR

Abstract: transistor 79t
Contextual Info: 7 - 3 9 - 3 / F 300 R 10 K SSE EUPEC » • 34032^7 Q 000252 7TT «U PEC Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 1000 V 300 A 600 A 2000 W V ge 20 V Inversdiode Inverse dlode

Contextual Info: FZ 600 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 600 V 600 A 1 ms 1200 A O Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,057 °C/W 2200 W V ge 20 V Inversdiode

Contextual Info: NPN SILICON PLANAR POWER TRANSISTOR ZBD849 PROVISIONAL DATASHEET ISSUE A - MARCH 94 FEATURES * Fast sw itchin g * G uaranteed h FE specified up to 20 A m p s * L o w collector-em m iter saturation v olta ge T0126 ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L

D40D5

Abstract: D40D7...8 D4001 D4102 tab ic D40D1 D40D2 D40D3 D40D4 D40D7
Contextual Info: SILICON POWER TRANSISTORS COMPLEMENTARY - 1 AMPERE Pt •c T c = 25°C v CEO Cont. Min. <A V) (W) GE Type NPN PNP @ 2V , h FE 100mA hFE @ 2V , 1A Min. Max. Min. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D40D2 - 6.25 30 1.0 120 360 20 - D41D2

D40E5

Abstract: D40D14 tab ic D40D5 D4102 D40D1 D40D2 D40D3 D40D4 D40D7
Contextual Info: SILICON POWER TRANSISTORS COMPLEMENTARY - 1 AMPERE Pt •c T c = 25°C v CEO Cont. Min. <A V) (W) GE Type NPN PNP @ 2V , h FE 100mA hFE @ 2V , 1A Min. Max. Min. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D40D2 - 6.25 30 1.0 120 360 20 - D41D2

tab ic

Abstract: D40D1 D40D2 D40D3 D40D4 D40D5 D40D7 D41D1 D41D2 D41D4
Contextual Info: SILICON POWER TRANSISTORS COMPLEMENTARY - 1 AMPERE Pt •c T c = 25°C v CEO Cont. Min. <A V) (W) GE Type NPN PNP @ 2V , h FE 100mA hFE @ 2V , 1A Min. Max. Min. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D40D2 - 6.25 30 1.0 120 360 20 - D41D2

Contextual Info: m HARRIS Military & Aerospace Products • RCA - GE • INTERSIL HCS245MS DIR [ T 20] VDD AO [~2 i | ] OE Al ^ is] BO High-Reliability Radiation-Hardened High-Speed CMOS/SOS Octal Transceiver A2 T B1 A3 | j f Te] B2 Aerospace Class S Screening A4 ^ is ] B3

Contextual Info: ge an Ch - S ub je ct to IFX54211 High PSRR Low Dropout Linear Voltage Regulator Pr el im in ar y IFX54211MB V33 Preliminary Data Sheet Rev. 0.1, 2014-02-20 Standard Power Preliminary an Overview Features Output Voltage: 3.3 V Output Voltage Accuracy of ±3 %

Contextual Info: 40490 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)20 I(C) Max. (A)20m Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)100’ I(CBO) Max. (A)12u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: 2N2555+JAN Transistors Ge PNP Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)20# Maximum Operating Temp (øC)100# I(CBO) Max. (A)125u @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)1.0

Contextual Info: 2N649/5 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)75’ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.65 h(FE) Max. Current gain.