GE SOLID STATE Search Results

PHOTOTRANSISTOR 3 LEGS

Contextual Info: 3875 08 1 0 1 E 19776 G E SOLID STATE Optoelectronic Specifications - HARRIS SEMICOND SECTOR 37E D S 4302271 0G2723Ô fl • HAS Photon Coupled Isolator SL5511 The GE Solid State SL551I consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual-in-line package. The GE

2764 block diagram

Abstract: ICAN-6525 rca cdp
Contextual Info: /^e5 - ib 006164 GE/RCA Products GE Solid State Memory/Microprocessor Products ?• 7 3 CDP68EM05D2 Product Preview JH ú TERMINAL ASSIGNMENT 1 IRQ NC PA7 PA6 PA5 * PA4PA3PA2PA1 PAO PBO PB1 PB2 • PB3PB4PB5 PB6 • vpp— A12— A7 -1 A6-A5-A4-2764

QT10031U21MS

Abstract: QT10044U21MS QT10210U21MS 3 phase, 415v and 11 kw induction motor QT20058 QT10017U21MS QT1010 QT10310N21MS 18S-G QT10210N21MS
Contextual Info: GE Consumer & Industrial Power Protection New ASTAT XT Digital soft starters for 3ph standard induction motors GE imagination at work ASTAT XT ASTAT XT D Digital soft starters for 3ph standard induction motors in Digital Soft Starters G new ASTAT XT solid state soft starter features microprocessor control

m150 diode

Abstract: 100MS CNY28 M150 ambient phototransistor
Contextual Info: G E SOLID STATE öl OOnöSti DEJ3Ö750Ö1 ^ g Optoelectronic Specifications. ~ ~ * : 41-13 Photon Coupled Interrupter Module CN Y28 The GE Solid State CNY28 is a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a plastic housing. The

photo transistor til 78

Abstract: CNY36 vam8
Contextual Info: E SOLID STATE Dl ]>E|3fl?SQfll 0pnfl44 0 | Optoelectronic Specifications T *^ I -7 3 Photon Coupled Interrupter Module CNY36 The GE Solid State CNY36 is a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a plastic housing. The

Contextual Info: 3875081 G E SOLID STATE 01E Optoelectronic Specifications- 19768 r-v/-& 3 HARRIS SEMICOND SECTOR 37E » • 4302271 QD2723Q 3 « H A S Photon Coupled Isolator SL5500 - SL5501 The GE Solid State SL5500 - SL5501 consists of a gallium arsenide infrared

Contextual Info: E SOLID STATE Optoelectronic Specifications T-li-ZS Photon Coupled Isolator MCA230, MCA231, MCA255 GaAs Infrared Emitting Diode & NPN Silicon Darlington Connected Phototransistor The GE Solid State MCA series consists of a gallium arsenide infrared emitting diode coupled with a silicon photo-darlington

GE H11A3

Abstract: GE H11A1 H11A1 GE H11A2 H11A3 H11A1 H11A4 H11A5 lotti
Contextual Info: G E SOLID STATE 01 DE I 3Ö7SDÖ1 DDlltflt Optoelectronic Specifications. Photon Coupled Isolator H11A1, H11A2, H11A3, H11A4, H11A5 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State H llA i thru H11A5 consist of a gallium arsenide

H22B1

Abstract: H22B2 H22B3
Contextual Info: SOLID STATE 01 DE§3fl750fil D I Optoelectronic Specifications T-41-73 1mm Aperture Photon Coupled Interrupter Module H22B1 ,H22B2 ,H22B3 The GE Solid State H22B Interrupter Module is a gallium arse­ nide infrared emitting diode coupled to a silicon darlington con­

2N3904

Abstract: 2n3906 for 2N3904 2N3906 JEDEC 2n3906 rca 2N3903 2N3906-O 2N3904 230 2N3905 2N3S04
Contextual Info: G E SOLID STATE D1 3875081 G E SOLID STATE DE 13fl7SDfil □□17124 .0 01E Signal - 2N3903, 2N3904, 2N3905, 2N3906 17924 D *r-3 7-/r _ * r ~ 3 S V / Silicon Transistors TO-92 The GE/RCA 2N3903, 2N3904 NPN types and 2N3905,

Contextual Info: 3875081 G E SOLID STATE 0 1E 19772 Optoelectronic Specifications -T - W J - Î 3 HARRI S SEMI COND SECTOR 3 7E D • 4305571 0057534 0 ■ Photon Coupled Isolator SL5504 The GE Solid State SL5504 consists of a gallium arsenide infrared emitting

MCA231

Abstract: MCA230 MCA255
Contextual Info: E SOLID STATE Optoelectronic Specifications T -4/-S5 Photon Coupled Isolator MCA230, MCA231, MCA255 GaAs Infrared Emitting Diode & N PN Silicon Darlington Connected Phototransistor The GE Solid State MCA series consists of a gallium arsenide infrared emitting diode coupled with a silicon photo-darlington

CNY33

Abstract: CNY35 D29E2 D45H8 I20VAC 86Vac
Contextual Info: SOLID STATE 01 Optoelectronic Specifications » e I bü TSDÖI 001'ifl3ñ S T -*V < -5 3 Photon Coupled Isolator CNY33 Ga As Infrared Emitting Diode & NPN Silicon High Voltage Photo-Transistor The GE Solid State CNY33 is a gallium arsenide, infrared emitting

PPT Diode specifications

Abstract: PHOTO TRANSISTOR ppt CNY29
Contextual Info: SOLID STATE □1 D E |3 fl? 50fll D 0na2fl 2 | "T-4/-7 3 Optoelectronic Specifications , Photon Coupled Interrupter Module C N Y29 The GE Solid State CNY29 is a gallium arsenide infrared emitting diode coupled with a silicon photo-darlington in a plastic housing.

CNY31

Contextual Info: E SOLID. STATE Dl De | 3075DÔ1 001^334 fl | Optoelectronic Specifications Photon Coupled Isolator CNY31 Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier The GE Solid State CNY31 is a gallium arsenide, infrared emitting diode coupled with a silicon photo-darlington amplifier in a low-cost

Contextual Info: 3875081 G E SOLID STATE 01E Optoelectronic Specifications_ HARRIS SEMICOND SECTOR 37E D • 19874 D -WII HAS 43D2271 00S733b Ô Photon Coupled Isolator MCT2, MCT2E, MCT26 GaAs In frare d E m itting Diode & NPN Silicon Photo-T ransistor The GE Solid State MCT2, MCT2E and MCT26 are gallium arsenide,

CNX35

Abstract: CNX36
Contextual Info: G E SOLID STATE 01 Optoelectronic Specifications. DE|3ñ75Dfli □□nasa a |~~ '- 4 I- 8 3 Photon Coupled Isolator CNX35, CNX36 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State CNX35 and CNX 36 are gallium arsenide, infrared emitting diodes coupled with a silicon phototransistor

GE H21A1

Abstract: h21a io 49
Contextual Info: G E SOLID STATE □1 DE I 3 0 7 5 0 0 1 0011760 Optoelectronic Specifications T-Ml-73 1mm Aperture Photon Coupled Interrupter Module H21A1,H21A2,H21A3 The GE Solid State H21A Interrupter Module is a gallium arse­ nide infrared emitting diode coupled to a silicon phototransistor in

CNY32

Abstract: 5300V
Contextual Info: G E SOLID STATE 01 DE I 3S7S0fll 00nfl3fc. 1 I Optoelectronic Specifications - S 3 Photon Coupled Isolator CNY32 Ga As Infrared Emitting Diodes & NPN Silicon Photo-Transistors The GE Solid State CNY32 is a gallium arsenide, infrared emitting diode coupled with a silicon photo-transistor in a low-cost plastic

BPW38

Contextual Info: SOLID STATE 01 DE 3 f l 7 5 0 f l l DOnam 2 Optoelectronic Specifications. r - y Light Detector / i s Planar Silicon Photo-Darlington Amplifier BPW38 The GE Solid State BPW38 is a supersensitive NPN Planar Silicon Photodarlington Amplifier. For many applications, only the collector and emitter

4W0E

Abstract: SMEW H11C4 H11C5-H11C6 VP243 GE SCR 1000 H11C5 H11C6 400v transistor the light activated scr
Contextual Info: G E SOLID STATE 01 DE J 3ñ7SDñl DOlTOfl b | Optoelectronic Specifications " T -w -s 7 Photon Coupled Isolator H11C4 Ga As Infrared Emitting Diode & Light Activated SCR The GE Solid State H 11C4, H 11C5 and H11C6 are gallium arsenide, infrared emitting diodes coupled with light activated silicon con- j

Contextual Info: GE SOLID STATE 01 DE 3 ö 7 s a a i uoiD7t.a a 0 1E 10762 3875081 G E SOLID STATE D LM4250 T - lH - o q LM4250 Programmable Operational Amplifier GENERAL DESCRIPTION FEATURES The 4250 is an extremely versatile programmable mono­ lithic operational amplifier. A single external master bias

cqx 87

Abstract: CQX14 CQX15 CQX16 CQX17 "GE Solid state" CQX 13
Contextual Info: G E SOLID STATE 01 DE 3fl750fll Qdllülb t. I Optoelectronic Specifications T 'H /gS — Infrared Emitter CQX14, CQX15, CQX16, CQX17 Gallium Arsenide Infrared-Emitting Diode The GE Solid State CQX14-CQXI5-CQX16-CQXI7 series are gallium arsenide, light emitting diodes which emit non-coherent, infrared energy with a peak wave

SL5500

Abstract: n7bc SL5501
Contextual Info: G E SOLID S T AT E □1 Optoelectronic Specifications DE § 3 3 7 5 0 3 1 DQM7bfl r-v/-£3 Photon Coupled Isolator SL5500 - SL5501 The GE Solid State SL5500 - SL5501 consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual-in-line package.