GD173 Search Results

IRF820

Abstract: IRF822 irf821 IRF820.821 k 55 d 3j3 IRF820 SAMSUNG ON 823 IRF820..821 IRF420 IRF422
Contextual Info: ^SO IRF820/821/822/823 FEATURES GD17311 Lower R ds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability 7 cìb414E • •

Penetrox A Electric Joint Compound

Abstract: Penetrox E Electric Joint Compound u1011 Burndy Y35 hypress burndy YGIB Bus Bar torque for metric bolts UL467 YGHC29C29 PIBEAMKIT burndy Y750
Contextual Info: BURNDY Grounding TABLE OF CONTENTS HYGROUND IRREVERSIBLE COMPRESSION GROUNDING AND INSTALLATION TOOLING HYGROUND™ Features and Benefits .D-3 - D-4 Type YGIB .D-18 - D-19 Type YGL-C .D-5

tl 0841

Abstract: BDX83 BDX83C 1000 watts schematic diagram of solid state audio amplifier IC TL 0841 1000 watts solid state audio amplifier BDX83A BDX83B D-10
Contextual Info: 3875081 G E S O L I D S T A TE 0 1 E 17296 D arlington Pow er T ran sistors_ "Ü ï dT - 33-2-9 DE § 3 f l? 5 0 f ll O O lV a ^ t 7 | BDX83, BDX83A, BDX83B, BDX83C File Number 955 15-Ampere N-P-N Darlington Power Transistors 40-60-80-100 Volts, 125 Watts

MSM51V17100

Abstract: 724540
Contextual Info: O K I Semiconductor MSM5 1 V1 7 1 0 0 _ 16,777,216-Word x 1-Bit D Y N A M IC RA M : FAST PAGE M O D E TYPE DESCRIPTION The MSM51V17100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51V17100 is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM51V16100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE T YPE DESCRIPTION The MSM51V16100 is a new generation dynam ic organized as 16,777,216-w ord x 1-bit, The technology u sed to fabricate theM SM 51 V16100 is OKI's CM O S silicon gate process technology.

Contextual Info: Data Sheet May 1995 a A T S T ~= ^ ar Microelectronics DSP1618 Digital Signal Processor Features • Optimized for digital cellular applications with a bit manipulation unit and an error correction coprocessor for higher signal coding efficiency ■ 20 ns, 25 ns, and 30 ns instruction cycle times at

Contextual Info: 551ô4bô 0017342 172 Final Electrical Specifications LTC1624 High Efficiency SO-8 N -Channel Switching Regulator C ontroller lu m TECHNOLOGY DCSCRICTIOn FenTURcs • N-Channel MOSFET Drive ■ Implements Boost, Step-Down, SEPIC and Inverting Regulators ■ Wide V|n Range: 3.5V to 36V Operation

Contextual Info: Ordering number: EN 5204 Monolithic Linear 1C LA4587M No. *5 2 0 4 Preamplifier + Power Amplifier for 1.5 V Headphone Stereos S Ä W O I Preliminary Overview Package Dimensions The LA4587M is a system IC that includes all of the necessary functions for a playback set on a single chip, reducing the

Contextual Info: MT4C1M16C3 S 1 MEG X 16 DRAM MICRON I TECHNOLOGY, INC. DRAM 1 MEG x 16 DRAM 5.0V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • JEDEC- and industry-standard xl6 timing, functions, pinouts and packages • High-performance CMOS silicon-gate process • Single +5.0V ±10% power supply

Contextual Info: SONY, C X P 50712 /50716 CMOS 4-bit Single Chip Microcomputer Description The CXP50712/50716 is a CMOS 4-bit microcomputer which consists of 4-bit CPU, ROM, RAM, I/O port, 8-bit timer, 8-bit timer/counter, 18-bit time base timer, 8-bit serial I/O. vector interruption, power on reset function, a

Contextual Info: IRF740/741/742/743 IRFP340/341/342/343 SAMSUNG ELECTRONICS INC N-CHANNEL POWER MOSFETS SÎ16K b?E D FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

burndy Y750

Abstract: burndy Y35 Burndy Y35 hypress IEEE-837 burndy* YA Lug Burndy burndy Y39 STR 5634 kpb 1313 B455 E20
Contextual Info: BURNDY Grounding TABLE OF CONTENTS HYGROUND® IRREVERSIBLE COMPRESSION GROUNDING AND INSTALLATION TOOLING ® HYGROUND Features Type YGIB . . . . . . . . . . E-20 - E-21 and Benefits . . . . . . . . . E-5 - E-6 E-1 Type YGL-C . . . . . . . . . . . . . . . . E-7

Burndy PAT750-18V parts breakdown

Abstract: BURN GI CONDUIT lp 1610 for door bell Burndy Y35 hypress parts breakdown ci an 7591 NEC c317 KPC 45 94V SAE-AS7928 burndy Y35 Hypress owner manual burndy patriot pat750-18v replacement parts
Contextual Info: Master Catalog Solutions for the Electrical Industry Experience. Technology. Answers. TM Customer Service Department 7 Aviation Park Drive Londonderry, NH 03053 1-800-346-4175 1-603-647-5299 International Canada 1-800-361-6975 (Quebec) 1-800-387-6487 (All other provinces)

Contextual Info: O K I Semiconductor MSM5 116400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM5116400 is OKI's CMOS silicon gate process technology.

ci 741

Abstract: tl 741 IRFS740 742 mosfet CI 4017 IRFS743 LS 741 mosfet 350v 10A te 4017 IRFS741
Contextual Info: SA MS UN G E L E C T R O N I C S INC b7E ]> • 0 D 1 7 3 7 4 034 N-CHANNEL POWER MOSFETS IRFS740/741/742/743 FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast sw itching times Rugged polysilicon gate cell structure Lower input capacitance

LA4705

Contextual Info: Ordering number: EN3848D Monolithic Linear 1C // No. 3848D SA'WO LA4705 15 W 2-channel BTL AF Power Amplifier for Car Stereos Overview Package Dimensions The LA4705 is a BTL two-channel power IC for car audio and radio-cassette players developed in pursuit of excellent sound

burndy Y35 Hypress owner manual

Abstract: burndy Y39 Hypress owner manual Burndy Y35 hypress burndy Y35 burndy Y750 UL-467 Penetrox A Electric Joint Compound Y750 REVOLVER HYPRESS GBM STEP MOTOR burndy Y750HS user manual
Contextual Info: GC-08 www.burndy.com CALL 1-800-346-4175 FOR YOUR LOCAL SALES REPRESENTATIVE BURNDY PRODUCTS BURNDY PRODUCTS Grounding Catalog Experience. Technology. Answers. Customer Service Dept. 7 Aviation Park Drive Londonderry, NH 03053 1-800-346-4175 Canada 1-800-361-6975 Quebec

Contextual Info: O K I S em ico n d u cto r M SM 511 6 1 0 0 _ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116100 is a new generation dynamic organized as 16,777,216 word x 1-bit. The technology used to fabricate the MSM5116100 is OKI's CMOS silicon gate process technology.

MSM5117100

Contextual Info: OKI Semiconductor MSM5117100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM5117100 is OKI's CMOS silicon gate process technology.

LH28F008SC

Abstract: alfow
Contextual Info: PRODUCT PREVIEW LH28F008SC 8-MBIT 1 MB x 8 SmartVoltage FlashFileTM MEMORY • SmartVoltage Technology — 3.3V or 5V Vcc — 3.3V, 5V, or 12V VPP ■ High-Density Symmetrically-Bfocked ■ High-Performance — 85 ns Read Access Time ■ Extended Cycling Capability

Contextual Info: PRELIMINARY IDT7016S/L HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simulta­ neous reads of the same memory location • High-speed access — Military: 25/35ns max. — Commercial:15/17/20/25/35ns (max.)

ld18a

Abstract: IRFS722 IRFS720 IRFS721 IRFS723
Contextual Info: SAM S UN G E L E C T R O N I C S INC L.7E D • T ^ b M l M S 0 D 1 7 3 b 4 1^5 N-CHANNEL POWER MOSFETS IRFS720/721/722/723 FEATURES • • • • • • • Lower R d s O N Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

CXP5086

Contextual Info: CXP5080 SONY, CMOS 4-bit 1 Chip Microcomputer Description CXP5080 is a CMOS 4-bit 1 chip microcomputer of piggyback/evaluator combined type which has been developed for functional evaluation of the CXP5086. Piggyback type Package Outline Unit : mm 64 pin SDIP Ceramic

Contextual Info: Ordering number : EN*5715A Monolithic Linear IC _ LA4725 Is a H y o 2-Channel BTL Power Amplifier 30W+30W with Standby Switch for Car Stereos Preliminary Overview Package Dimensions The LA4725 is a BTL two-channel power IC for