GC57 Search Results

hearing instrument WDRC

Abstract: GB570 GC570 50k variable resistor connection 42K8
Contextual Info: DynamEQ II WDRC IC GB570/GC570 - DATA SHEET FEATURES DEVICE DESCRIPTION • dual channel signal processing The DynamEQ® II product family is a second generation Wide Dynamic Range Compression WDRC system. • 2nd (4th) order state variable filter GB570 (GC570) incorporates 12 dB/oct (24 dB/oct) filtering

BUL48

Contextual Info: S * 5 G S - T H O M S O N ¡^ O T e « S 7 B U L48 HIGH VOLTAGE NPN MULTIEPITAXIAL FASTSW ITCHING TRAN SISTO R . HIGH VOLTAGE CAPABILITY . TIGHT CONTROL OF DYNAMIC CHARACTERISTICS • MINIMUM LOT TO LOT SPREAD FOR RELIABLE OPERATION . LOW BASE DRIVE REQUIREMENTS

RTL8111D

Abstract: PQ2000 up7711 PD8001 kb3925 asus schematic LG lcd backlight inverter RTL8111DL ADP3208J vga nvidia
Contextual Info: 4 3 Reset 2 Off Button PWRGD DOWN CPU, VGA Thermal OVERT# FORCE_OFF# Circuit Daughter Board EC_RST# PWR_SW# 2 D AC_BAT_SYS +5VA +3VA 1 Power On SWITCH EC KB3925 5 PM_RSMRST# VSUS_ON ICH9-M VRMPWRGD C SUSC_EC# From EC 9 +12V +5V +3V +1.8V +1.5V +0.9V GMCH Cantiga

kb3925

Abstract: isl6262acrz EC-IT8752 pc817 s6 Asus RTL8111C-GR sr7012 asus schematic diagram intel GM45 cantiga asus f3s
Contextual Info: 4 3 Reset 2 Off Button PWRGD DOWN CPU, VGA Thermal OVERT# FORCE_OFF# Circuit Daughter Board EC_RST# PWR_SW# 2 D AC_BAT_SYS +5VA +3VA 1 3 6 Power On SWITCH EC KB3925 5 PM_RSMRST# VSUS_ON ICH9-M VRMPWRGD C SUSC_EC# From EC 9 +12V +5V +3V +1.8V +1.5V +0.9V GMCH

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

5252 F 0921

Contextual Info: LFOOAB/C SERIES VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT . VERY LOW DROPOUT VOLTAGE 0.45V . VERY LOW QUIESCENT CURRENT (TYP. 50 nA IN OFF MODE, 500|^A IN ON MODE) . OUTPUT CURRENT UP TO 500 mA . LOGIC-CONTROLLED ELECTRONIC SHUTDOWN . OUTPUT VOLTAGES OF 1.25; 1.5; 2.5; 2.7; 3;

BACC47EF1

Abstract: BACC47 BACC66 TRI-STAR BACC47EG1 BACC47EF3 BACC47EG BACC47EF2 arinc 600 coax pin size 8 317-2222-301
Contextual Info: ARINC 404 Types: • Environmental • Non-Environmental Shell Configurations: • Plug / Receptacle Pin or Socket S One Gang, type “A” Shell S One Gang, type “B” Shell S Two Gang, type “B” shell S Three Gang, type “B” shell S Four Gang, type “B” shell

2d6 transistor

Contextual Info: f Z 7 S G S -T H O M ^ 7# S O N [» » fflL IO T l !* ! S TB 8 N A 50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB8NA50 Vdss RDS on Id 500 V < 0.85 Û 8A TYPICAL R d s (o ii) = 0.7 £2 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

Contextual Info: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ B U L216 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED HIGH OPERATING JUNCTION TEMPERATURE . HIGH RUGGEDNESS

Contextual Info: [ f W Q J M t S T IP IM S W U IW 80C186EB-16, -13, -8 16-BIT HIGH-INTEGRATION EMBEDDED PROCESSOR • Full Static Operation • True CMOS Inputs and Outputs • • 40°C to + 85°C Operating Tem perature Range In te g ra te d F e a tu re S et — L o w -P o w e r S ta tic CPU C o re

Contextual Info: LORAL m C R O ü J A VE-FS I SIE D • S S aD 13 a O D D D 4 t ä 44b "T - 0-7 -1 1 HIGH POWER POSITIVE BIAS PLATED HEATSINK GUNN DIODES DESCRIPTION APPLICATIONS T he FSI S e m ico n d u cto r Plated H eatsin k d io d e chip consists o f a silver h eat sink chem ically b o n d e d t o th e b u lk se m ico n d u ctor

TRANSISTOR BO 352

Abstract: BUL510
Contextual Info: SGS-THOMSON iiueraoowgi *7/ BUL510 HIGH VOLTAGE NPN MULTIEPITAXIAL FASTSWITCHING TRANSISTOR . HIGH VOLTAGE CAPABILITY . TIGHT CONTROL OF DYNAMIC CHARACTERISTICS . MINIMUM LOT TO LOT SPREAD FOR RELIABLE OPERATION . LOW BASE DRIVE REQUIREMENTS i VERY HIGH SWITCHING SPEED:

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

SiS968

Abstract: kb3925 88E8056 t1733 SIS672 INVERTER BOARD Asus A6 ASUS ALC888-GR GC105 NC108
Contextual Info: D C B A 5 Internal KB CRT LCD DDR2 32MX16M X4 Digitally signed by dd DN: cn=dd, o=dd, ou=dd, email=dddd@yahoo. com, c=US Date: 2009.11.28 07:26:12 +07'00' CBB Touch Pad Synaptics EC SPI FLASH 4 ATI GPU M72-S ࣯ࣳࣞ࣪ ࣰࣩࣳ࣡ 632 BGA Debug Connector

BU941ZB

Abstract: ZPFI
Contextual Info: S G S -T H O M S O N K fflO O K LO T M D O S I B U 94i z / B U 94i z p B U 9 4 1 ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON PRELIMINARY DATA • VERY RUGGED BIPOLAR TECHNOLOGY . BUILT IN CLAMPING ZENER ■ HIGH OPERATING JUNCTION TEMPERATURE

P6nA60

Abstract: 6na60 NA60FI
Contextual Info: *57 TYPE STP6N A 60 STP6NA60FI . . . • ■ . ■ 6 60 6 60 SGS-THOMSON iLiOT !Q £I stp NA STP NA FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V dss R DS(on Id 600 V 600 V < 1.2 a < 1.2 a 6.5 A 3.9 A TYPICAL R DS(on) = 1 Q ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: SCS-THOMSON liainmgiigiLgCTiaimniBS BU941ZT/BU941ZTFI BU941ZSM HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON . VERY RUGGED BIPOLAR TECHNOLOGY . BUILT IN CLAMPING ZENER . HIGH OPERATING JUNCTION TEMPERATURE . WIDE RANGE OF PACKAGES . POWER PACKAGE SPECICALLY

Contextual Info: SGS-THOMSON [¡»œ^iera « BU941/BU941P BU941 PFl HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON . SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE . VERY RUGGED BIPOLARTECHNOLOGY . HIGH OPERATING JUNCTION

Contextual Info: S G S - T H O M ¿ 5 S T P 4 N A 60 S T P 4 N A 6 0 FI S O N ¡U È T O « 7 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V STP4NA60 STP4NA60FI dss 600 V 600 V R DS on Id 2.2 2.2 4.3 A 2.7 A < < a a • TYPICAL RDS(on) = 1 85 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

GC114

Abstract: 88E8056 ASUS 88e8056 Marvell Marvell 88E8056 asus f3 NB8M hr5 connector Intel PM965 NB-965GM1-FSB
Contextual Info: 5 RTC_BTY PCB 4 PART for BOM only Function Function ASUS Partnumber LOCATION RTC BTY 07G016412032 GPU NB8M 02G190012900 2 1 Temp Modify 1012: Delete EC23,31,32,34,39 already have in location Delete EC35,36 No space to add Delete GC114,115,120,121,122,123,116,117,118,119 No space

941t

Abstract: BU941T
Contextual Info: S G S -T H O M S O N b u 94i t / b u 94i t f i B U 941 S M HIGH VO LTAG E IGNITION COIL DRIVER NPN POW ER D ARLING TO N PRELIMINARY DATA • ■ VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION TEMPERATURE ■ WIDE RANGE OF PACKAGES ■ POWER PACKAGE SPECIFICALLY

C5727

Contextual Info: Zi! SGS-THOMSON R8D lS S l[LliSTl^©iBOi STB3NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E STB3NA 80 V dss RDS(on) Id 800 V < 4 .5 Q. 3.1 A • ■ . . ■ . . . TYPICAL RDS(on) = 3.5 £2 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

Contextual Info: ¿57 SGS-THOMSON ¡UÈTO « STP6NA60 STP6NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E STP6NA60 STP6NA60FI • . ■ . . . . V dss RDS on 600 V 600 V < 1 .2 Id a 6.5 A < 1 .2 0. 3 .9 A TYPICAL RDS(on) = 1 ± 30V GATE TO SOURCE VOLTAGE RATING