GAN PHEMT TRANSISTOR L BAND Search Results

InP transistor HEMT

Abstract: Class E amplifier GaN amplifier inp hemt power amplifier pHEMT transistor visitor Gan hemt transistor varian NONLINEAR MODEL LDMOS
Contextual Info: 2130 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 42, NO. 10, OCTOBER 2007 A GaN HEMT Class F Amplifier at 2 GHz With 80% PAE David Schmelzer, Student Member, IEEE, and Stephen I. Long, Senior Member, IEEE Abstract—A Class F amplifier has been designed, fabricated, and

fpd2000as

Abstract: FPD200 CB100 FPD20 RO4003 InP HBT transistor low noise
Contextual Info: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT Package Style: AS Product Description Features The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power applications in L-Band. The surface-mount package has been optimized

Ctr32

Contextual Info: RF5604 RF56045 V, 475MHz to 625MHz FEM 5V, 475MHZ TO 625MHZ FEM Package: 20-Pin, 4.5mmx4.5mmx0.975mm        Vdd 20 19 18 17 GND 2 15 C_PD GND 3 14 GND GND 4 13 5 12 GND 11 GND TX_IN Applications C_ATT 16 RX_OUT Integrated 50 Input/Output

Contextual Info: RF5604 RF56045 V, 475MHz to 625MHz FEM 5V, 475MHZ TO 625MHZ FEM Package: 20-Pin, 4.5mmx4.5mmx0.975mm        Vdd 20 19 18 17 GND 2 15 C_PD GND 3 14 GND GND 4 13 5 12 GND 11 GND TX_IN Applications C_ATT 16 RX_OUT Integrated 50 Input/Output

TGA2517

Abstract: TGA2540-FL TGA2573 TQM7M5013 TQP6M9002 tga2540 tqp340003 TQM726018 QFN28 6x6 TQM679002A
Contextual Info: May 2010 Product Selection Guide Amplifiers Control Products Filters Integrated Products Optical Components Connecting the Digital World to the Global Network Table of Contents ABOUT TRIQUINT SEMICONDUCTOR .2 GUIDE BY MARKET Automotive . 4

Integrated Synthesizers with Mixers

Abstract: Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers
Contextual Info: RFMD PRODUCT SELECTION GUIDE 2013-2014 Amplifiers Attenuators Modulators Switches Upconverters/Downconverters Voltage-Controlled Oscillators Synthesizers CATV Amplifiers and Tuners High Reliability Components Components for Cellular Applications Open Foundry Services

Contextual Info: RF2363 DUAL-BAND 3V LOW NOISE AMPLIFIER NOT FOR NEW DESIGNS Package Style: SOT, 8-Lead „ „ „ „ „ „ Low Noise and High Intercept Point 18dB Gain at 900MHz 21dB Gain at 1900MHz Low Supply Current Single 2.5V to 5.0V Power Supply Very Small SOT-23-8 Plastic

Contextual Info: RF2363 DUAL-BAND 3V LOW NOISE AMPLIFIER Package Style: SOT, 8-Lead Features „ „ „ „ „ „ Low Noise and High Intercept Point 18dB Gain at 900MHz 21dB Gain at 1900MHz Low Supply Current Single 2.5V to 5.0V Power Supply Very Small SOT-23-8 Plastic Package

Contextual Info: RF2163 RF21633 V, 2.5GHz Linear Power Amplifier 3V, 2.5GHz LINEAR POWER AMPLIFIER 19dB Small Signal Gain  High Power Added Efficiency  Patent Pending Power Sense Technology  1800MHz to 2500MHz Frequency Range 2.5GHz ISM Band Applications  PCS Communication Systems

A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications

Abstract: GaN amplifier Microwave Development Company dummy load volterra N6030 GaN amplifier 100W 4G base station power amplifier combiner THEORY Square D DPA 12 MAR-2 MMIC
Contextual Info: This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES 1 A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications

433MHZ amplifier 1w

Abstract: Schematic/RF2126
Contextual Info: RF2126 RF2126High Power Linear Amplifier HIGH POWER LINEAR AMPLIFIER Features „ „ „ „ „ „ Single 3V to 6.0V Supply 1.3W Output Power 12dB Gain 45% Efficiency Power Down Mode 400MHz to 2700MHz Operation RF IN 1 8 RF OUT RF IN 2 7 RF OUT PC 3 VCC 4 5 RF OUT

433MHZ amplifier 1w

Abstract: Transistor A14 RF2126PCK RF2126 RF5187 RF Based Wireless Electronic Notice Board pc
Contextual Info: RF2126 RF2126High Power Linear Amplifier HIGH POWER LINEAR AMPLIFIER Features „ „ „ „ „ „ Single 3V to 6.0V Supply 1.3W Output Power 12dB Gain 45% Efficiency Power Down Mode 400MHz to 2700MHz Operation RF IN 1 8 RF OUT RF IN 2 7 RF OUT PC 3 VCC 4 5 RF OUT

Contextual Info: RF2126 RF2126High Power Linear Amplifier HIGH POWER LINEAR AMPLIFIER NOT FOR NEW DESIGNS RoHS Compliant & Pb-Free Product Package Style: SOIC-8 Slug This is a Legacy Product. For new designs, please contact RFMD to learn about our newer products. Features

Contextual Info: RF2162 This is a Legacy Product. For new designs, please contact RFMD to learn about our newer products. 3V 900MHz LINEAR AMPLIFIER Package Style: QFN, 16-Pin, 4x4  Single 3V Supply  29dBm Linear Output Power  29dB Linear Gain GND VCC1 VCC1 VCC BIAS

Contextual Info: RF2162 This is a Legacy Product. For new designs, please contact RFMD to learn about our newer products. 3V 900MHz LINEAR AMPLIFIER NOT FOR NEW DESIGNS Package Style: QFN, 16-Pin, 4x4 Single 3V Supply  29dBm Linear Output Power  29dB Linear Gain VCC1

Contextual Info: RF5122 3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 Features    RF IN 1 6 VC2 Input Match     IEEE802.11b/g/n WiFi Applications 2.5GHz ISM Band Applications Commercial and Consumer

Contextual Info: RF5122 3V TO 4.5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 RoHS Compliant & Pb-Free Product Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 Features „ „ „ RF IN 1 6 VC2 Input Match „ „ „ „ IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications

Contextual Info: RF5122 3V TO 4.5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 RoHS Compliant & Pb-Free Product Package Style: QFN, 8-Pin, 2 mm x 2 mm x 0.6 mm 8 7 Features „ „ „ RF IN 1 6 VC2 Input Match „ „ „ „ IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications

5GHz wifi power amplifier

Contextual Info: RF5322 3V TO 4.5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.4mm 8 7 Features    RF IN 1 6 VC2 Input Match     IEEE802.11b/g/n WiFi Applications 2.5GHz ISM Band Applications Commercial and Consumer

SFT-9100

Abstract: InP transistor HEMT sft 43 Sft9100 SFT-9200B 9200B InP HEMT transistor at 50ghz inp hemt low noise amplifier InP HBT transistor mesfet low noise
Contextual Info: SFT-9200B SFT-9200B 50GHz Transimpedance Amplifier 50GHZ TRANSIMPEDANCE AMPLIFIER Product Description Features RFMD’s SFT-9200B is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 43Gb/s SONET/SDH, 40GbE, and 100GbE

RF5122

Abstract: metal detector circuit with pcb IPC-SM-782 QFN12 RF5122PCBA-41X P12 RF PIN SOT
Contextual Info: RF5122 3V TO 4.5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 RoHS Compliant & Pb-Free Product Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 Features „ „ „ RF IN 1 6 VC2 Input Match „ „ „ „ IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications

RF5122

Abstract: metal detector circuit with pcb IPC-SM-782 QFN12 QFN8 RF
Contextual Info: RF5122 3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 Features    RF IN 1 6 VC2 Input Match     IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications Commercial and Consumer

RF5122

Abstract: IPC-SM-782 QFN12 RF5122PCBA-41X RF Based Wireless Electronic Notice Board pc
Contextual Info: RF5122 3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 Features „ „ „ RF IN 1 6 VC2 Input Match „ „ „ „ IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications Commercial and Consumer

Contextual Info: RF5122 3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 RoHS Compliant & Pb-Free Product Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 Features „ „ „ RF IN 1 6 VC2 Input Match „ „ „ „ IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications