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    Part ECAD Model Manufacturer Description Download Buy
    CLF1G0035-100P
    Rochester Electronics LLC CLF1G0035-100 - 100W Broadband RF power GaN HEMT PDF Buy
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    Infineon Technologies AG REF65W2CGANPAG1TOBO2

    OTHERS-WCS
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    DigiKey REF65W2CGANPAG1TOBO2 Box 3 1
    • 1 $154.00
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    Mouser Electronics REF65W2CGANPAG1TOBO2
    • 1 $125.09
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    Newark REF65W2CGANPAG1TOBO2 Bulk 1
    • 1 $183.89
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    Axiomtek Co Ltd CAPA318VGGA-N3350 w/RS-422/485

    Single Board Computers 3.5" Embedded SBC with Intel Celeron processor N3350 (1.1 to 2.4 GHz, 2MB Cache, 6W) VGA/LVDS, 2 GbE LANs, audio and heatsink
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CAPA318VGGA-N3350 w/RS-422/485
    • 1 $304.00
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    Infineon Technologies AG EVALHBPARALLELGANTOBO1

    Power Management IC Development Tools SONSTIGES ALLGEMEIN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics EVALHBPARALLELGANTOBO1
    • 1 $226.12
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    GAN PA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    L-934MBC

    Abstract: L-934MBD L-934MBT LED Kingbright L934MBD kingBright t-1 LED L934MBC L- 934MBC L934MBT
    Contextual Info: T-1 3mm BLUE LED Kingbright L-934MBD GaN L-934MBT GaN L-934MBC GaN Package Dimensions Features lLOW POWER CONSUMPTION. lSOLID STATE BLUE LIGHT SOURCE. lSUITABLE FOR FULL COLOR LED DSIPLAYS AND INDICATORS DIAGNOSTIC/ANALYTICAL EQUIPMENT. Description The blue source color devices are made with GaN on SiC


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    L-934MBD L-934MBT L-934MBC 2-L934MB-2 L-934MBC 2-L934MB-3 LED Kingbright L934MBD kingBright t-1 LED L934MBC L- 934MBC L934MBT PDF

    5BWC

    Contextual Info: Chip Assy Part No. Material SLMXXX5BWC SLMXXX5BWD SLMXXX5BWT SLMXXX5PGC SLMXXX5PGD SLMXXX5PGT SLMXXX5GC SLMXXX5GD SLMXXX5GT SLMXXX5YC SLMXXX5YD SLMXXX5YT SLMXXX5HC SLMXXX5HD SLMXXX5HT SLMXXX5RC SLMXXX5RD SLMXXX5RT GaN/SiC GaN/SiC GaN/SiC GaP/GaP GaP/GaP GaP/GaP


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    Contextual Info: Chip Assy Part No. Material SLMXXX5BWC SLMXXX5BWD SLMXXX5BWT SLMXXX5PGC SLMXXX5PGD SLMXXX5PGT SLMXXX5GC SLMXXX5GD SLMXXX5GT SLMXXX5YC SLMXXX5YD SLMXXX5YT SLMXXX5HC SLMXXX5HD SLMXXX5HT SLMXXX5RC SLMXXX5RD SLMXXX5RT GaN/SiC GaN/SiC GaN/SiC GaP/GaP GaP/GaP GaP/GaP


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    L-53MBC

    Abstract: blue led 5mm L-53MBD blue led L-53MBT kingBright t-1 LED 5mm Blue Led 2-L53MB-3 Kingbright LED 5mm blue
    Contextual Info: T-1 3/4 5mm BLUE LED Kingbright L-53MBD GaN L-53MBT GaN L-53MBC GaN Package Dimensions Features lLOW POWER CONSUMPTION. STATE BLUE LIGHT SOURCE. lSUITABLE FOR FULL COLOR LED DSIPLAYS AND INDICATORS DIAGNOSTIC/ANALYTICAL EQUIPMENT. lSOLID Description The Blue source color devices are made with GaN on SiC


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    L-53MBD L-53MBT L-53MBC 2-L53MB-2 L-53MBC 2-L53MB-3 blue led 5mm blue led kingBright t-1 LED 5mm Blue Led 2-L53MB-3 Kingbright LED 5mm blue PDF

    28F0181-1SR-10

    Abstract: CAPACITOR 150 RED
    Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RF3928280W RF3928 RF3928 DS120508 28F0181-1SR-10 CAPACITOR 150 RED PDF

    GaN ADS

    Abstract: GaN amplifier 120W transistor hemt RF393x
    Contextual Info: RFMD. High Power GaN Unmatched Power Transistors UPT Introducing the development of Our GaN unmatched power transistor (UPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5µm GaN high electron mobility transistor (HEMT) semiconductor process,


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    RF393x 900MHz 220mA) 220mA, RF3934 440mA) 900MHz) GaN ADS GaN amplifier 120W transistor hemt PDF

    Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RF3928 RF3928280W DS120508 PDF

    Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RFHA1025 RFHA1025 96GHz 215GHz DS120613 PDF

    ATC100B620

    Abstract: L22 amplifier Gan hemt transistor RFMD
    Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RF3928280W RF3928 RF3928 DS120119 ATC100B620 L22 amplifier Gan hemt transistor RFMD PDF

    Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RFHA1025 RFHA1025 96GHz 215GHz DS120928 PDF

    Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RFHA1025 96GHz 215GHz DS120613 PDF

    RF3928B

    Abstract: power transistor gan s-band RF392
    Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RF3928B RF3928B DS111208 power transistor gan s-band RF392 PDF

    Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RF3928B DS120503 PDF

    Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RF3928B RF3928B DS120503 PDF

    atc100a150

    Abstract: power transistor gan s-band
    Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RF3928B RF3928B DS120503 atc100a150 power transistor gan s-band PDF

    Contextual Info: RFHA3944 60W GaN WIDEBAND POWER AMPLIFIER RFHA3944 Proposed 60W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF360-2 Features  Broadband Operation  Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz Advanced GaN HEMT Technology


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    RFHA3944 RF360-2 800MHz 2500MHz -40dBc DS120418 PDF

    Contextual Info: RFHA3942 35W GaN WIDEBAND POWER AMPLIFIER RFHA3942 Proposed 35W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF360-2 Features  Broadband Operation  Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz Advanced GaN HEMT Technology


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    RFHA3942 RF360-2 800MHz 2500MHz -40dBc DS120418 PDF

    Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RF3928B DS130313 PDF

    Contextual Info: Oval 5mm Ultra Bright GaN LED Lamps LITEM ? LTL05ETGES GaN Green LTL05ETBES GaN Blue Package Dimensions Features • Low power consumption. • High efficiency. • Versatile mounting on P.C. board or panel. • I.C. compatible/low current requirements. Description


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    LTL05ETGES LTL05ETBES 05ETGES 05ETBES PDF

    Contextual Info: Oval 5mm Ultra Bright GaN LED Lamps LITEM ? LTL05ETGES GaN Green LTL05ETBES GaN Blue Package Dimensions Features • Low power consumption. • High efficiency. • Versatile mounting on P.C. board or panel. • I.C. compatible/low current requirements. Description


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    LTL05ETGES LTL05ETBES 05ETGES 05ETBES PDF

    35F0121-1SR-10

    Abstract: ATC100B620 ERJ-3GEY0R00 eeafc1e100 bifet amplifier discrete schematic GaN TRANSISTOR
    Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 pin Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology   


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    RF3928280W RF3928 RF3928 DS110221 35F0121-1SR-10 ATC100B620 ERJ-3GEY0R00 eeafc1e100 bifet amplifier discrete schematic GaN TRANSISTOR PDF

    Contextual Info: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features  Advanced GaN HEMT Technology  Typical Peak Modulated Power >120W  Advanced Heat-Sink Technology 


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    RFG1M09090 700MHZ 1000MHZ 1000MHZ RF400-2 865MHz 960MHz 44dBm PDF

    RFG1M09180

    Abstract: ATC100B150JT
    Contextual Info: RFG1M09180 RFG1M09180 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advanced GaN HEMT Technology Typical Peak Modulated Power >240W Advanced Heat Sink Technology


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    RFG1M09180 700MHZ 1000MHZ RFG1M09180 RF400-2 865MHz 960MHz 47dBm ATC100B150JT PDF

    Contextual Info: LITEM 3 T-l3/4 5mm Ultra Bright GaN LED Lamps LTL053TGKS GaN Green LTL053TBKS GaN Blue Package Dimensions Features Low power consumption. High efficiency. Versatile mounting on P.C. board or panel. I.C. compatible/low current requirements. Popular T-1 % diameter.


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    LTL053TGKS LTL053TBKS 053TGKS 053TBKS PDF