GALV Search Results

Contextual Info: Technologies GmbH & Co KG Closed Loop Hall Current Sensor CYHCS-P This Hall Effect current sensor is based on the closed loop compensating principle and designed with a high galvanic isolation between primary and secondary circuits. It can be used for measurement of DC and AC current, pulse currents etc. The output of the transducer reflects the

Contextual Info: Technologies GmbH & Co KG Closed Loop Hall Current Sensor CYHCS-D4C This Hall Effect current sensor is based on closed loop compensating principle and designed with a high galvanic isolation between primary and secondary circuits. It can be used for measurement of DC and AC current, pulse currents etc. The output of the transducer reflects

ADM2484E

Abstract: SD103C ADP3330
Contextual Info: 500 kbps, ESD Protected, Half-/Full-Duplex, iCoupler, Isolated RS-485 Transceiver ADM2484E FEATURES FUNCTIONAL BLOCK DIAGRAM VDD2 VDD1 ADM2484E DE GALVANIC ISOLATION TxD Y Z A RxD B RE GND1 GND2 06984-001 Isolated, RS-485/RS-422 transceiver, configurable as half- or

lem current lt 100

Abstract: LEM Components
Contextual Info: Current Transducer LT 4000-T IPN = 4000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current

current SENSOR

Abstract: "Current Sensor" CS1000EK waveform of hall effect sensor CS400EK hall effect sensor for current measurement CS200EK
Contextual Info: CS1000EK Dismountable Hall-Effect Current Sensor Series Product Information Introduction:CS1000EK Series is a new generation of open -loop current sensor based on the principle of Hall effect. It is applicable for the measuring of DC, AC, pulse and complex waveform current with galvanic

MARKING CODE Zi sot363

Abstract: WRS SOT363 Marking Code ZI ZI Marking Code transistor sot-363 marking ZI 198S Transistor WRS
Contextual Info: SIEMENS BCR 198S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit •Two galvanic internal isolated Transistors in one package ■Built in bias resistor (R1=47k£i, R2=47kQ) Type Marking Ordering Code Pin Configuration

5b1 transistor

Abstract: transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor
Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications 4 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type

Contextual Info: SIEMENS BC 846S NPN Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with high matching in one package 11 az t.£. FI iïl R Lü

sot 23-5 marking code

Abstract: CMWSH-4
Contextual Info: Central CMWSH-4 TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM DUAL ISOLATED SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMWSH-4, 40V, Low VF, consists of two galvanically isolated SUPERminiTM Silicon Schottky diodes. The CMWSH-4 has been designed for use in

SIEMENS sr 460

Contextual Info: SIEMENS GaAIAs-IR-Lumineszenzdiode GaAIAs Infrared Emitter SFH 460 Preliminary Data Wesentliche Merkmale Features • Strahlung im sichtbaren Rotbereich ohne IR-Anteil • Kathode galvanisch mit dem Gehäuse­ boden verbunden • Sehr hoher Wirkungsgrad • Hohe Zuverlässigkeit

846PN

Abstract: VQE 11E
Contextual Info: SIEMENS BC 846PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation

Contextual Info: Industrial DC/DC CONVERTER MGDI-100 Wide Input : 100W POWER Industrial Grade 4:1 & 5:1 Wide Input Single Output Metallic Case - 1 500 VDC Isolation • Wide input range • Nominal power up to 100 W • High efficiency typ. 88% • Soft start • Galvanic isolation 1.500 VDC according to EN 60950

Contextual Info: Industrial DC/DC CONVERTER MGDI-26 Wide Input : 25W POWER Industrial Grade 4:1 Wide Input Single Output Metallic Case - 1.500 VDC Isolation • Wide input range • Nominal power of 25 W • Wide temperature range : -40°C/+95°C case • Soft start • Galvanic isolation 1.500 VDC according to EN60950

Contextual Info: Industrial DC/DC CONVERTER MGDI-100 Wide Input : 100W POWER Industrial Grade 5:1 Wide Input Single Output Metallic Case - 1.500 VDC Isolation • Wide input range • Nominal power up to 100 W • High efficiency typ. 88% • Soft start • Galvanic isolation 1.500 VDC according to EN 60950

Contextual Info: Pulse Transformers IT series Pulse Transformer with Double Secondary Winding Galvanic separation of drive and power circuit Approvals Voltage resistance up to 4kV Ignition current up to 1A Turns ratio up to 3:1:1 Technical specifications Flammability corresponding to:

MT29C4G96MAZBACJG-5 IT

Contextual Info: Pulse Transformer with Double Secondary Winding Pulse Transformers IT series Galvanic separation of drive and power circuit Voltage resistance up to 4kV Approvals Ignition current up to 1A Turns ratio up to 3:1:1 Features and benefits Galvanic separation with secondary winding.

sot23 s1a marking

Abstract: marking code S1A sot23
Contextual Info: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906

scr firing

Abstract: EIA-422-B EIA-485-A scr firing circuit EIA-485 rs485 scr 5w EIA-485-A termination rs485 termination GSCB6-CT002
Contextual Info: Green Power Solutions srl Via Greto di Cornigliano 6R - 16152 Genova , Italy Phone: +39-010-659 1869 Fax: +39-010-659 1870 Web: www.gpsemi.it E-mail: info@gpsemi.it GSCB6-C RS485 & CANBUS communication interface board. Full galvanic insulation Protection against communication channel shorts

Contextual Info: X F r TT r 2 2 3 .3 4 02963303 5 fixed al galv yes nr no Scho ettgu l packing pieces L work piece edges D IN 1 5 0 1 3 7 1 5 CD ISO 2768 mH 1/1 date generote #& n 020505 design dimensions ISO 2768 - in - 0 ,5 - 3 ± 0.1 3,0-6 i 0,1 6,-30 i 0,2 scale part surface

AEC-Q100 optocoupler

Contextual Info: ISO7421E-Q1 www.ti.com SLLSEA5B – MARCH 2012 – REVISED JUNE 2012 Low-Power Dual Digital Isolators Check for Samples: ISO7421E-Q1 FEATURES DESCRIPTION • • The ISO7421E-Q1 provides double galvanic isolation of up to 2.5 KVrms for 1 minute per UL. This digital

GVT71256T18

Abstract: DQ974
Contextual Info: ADVANCE INFORMATION GALVANTECH, INC. SYNCHRONOUS CACHE TAG SRAM PIPELINED OUTPUT GVT71256T18 256K X 18 SYNCHRONOUS TAG SRAM 256K x 18 SRAM +3.3V SUPPLY WITH CLOCKED REGISTERED INPUTS FEATURES GENERAL DESCRIPTION • • • • • • The Galvantech Synchronous Burst SRAM family

MARKING CODE CCB

Abstract: BC847S
Contextual Info: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see

CE1X

Abstract: fast sram 100mhz CE2Y GALVANTECH
Contextual Info: ADVANCE INFORMATION GALVANTECH, INC. DUAL I/O DUAL ADDRESS SYNCHRONOUS SRAM GVT81256P36/GVT81128P36 256K/128K X 36 PIPELINED SRAM 256K/128K X 36 SRAM +3.3V SUPPLY, FULLY REGISTERED TWO BI-DIRECTIONAL DATA BUSES FEATURES GENERAL DESCRIPTION • • • •

VIE150-12S4

Abstract: VIE150-12S fin heat sink igbt IC100
Contextual Info: ISOSMART IGBT Module VIE150-12S4 IC = 150 A = 1200 V VCES Intelligent Power Module IPM with integrated galvanic isolation interface High Short Circuit SOA Capability 3 3 4 5 6 7 8 9 10 Preliminary data 2 Driver 1 1 Protection Isolation 2 Symbol Test Conditions