GAAS IMPATT DIODE Search Results

Contextual Info: GaAs IMPATT DIODES TM MI5001 – MI5022 Features Specified High Output Power High DC to Microwave Efficiency For Pulsed and CW Applications Applications Oscillators Avionic Systems Electronic Warfare Systems Smart Antennas Description Microsemi’s GaAs IMPATT diodes are fabricated utilizing

impatt diode

Abstract: impatt diode operation IMPATT GaAs impatt diode
Contextual Info: M/A-COM SEMICONDUCTOR M/A-COM SEMICONDUCTOR PRODUCTS OPERATION GaAs IMPATT DIODE SELECTION GUIDE PRODUCTS OPERATION Frequency Range GHz Case Style ODS # 0.5 CW IMPATTS PULSED IMPATT DIODES Minimum CW Output Power in Watts Min. Peak Pulse Power In Watts 1.0

impatt

Abstract: impatt diode MI5022 impatt diode datasheet IMPATT-Diode
Contextual Info: GaAs IMPATT DIODES TM MI5001 – MI5022 Features ● Specified High Output Power ● High DC to Microwave Efficiency ● For Pulsed and CW Applications Applications ● Oscillators ● Avionic Systems ● Electronic Warfare Systems ● Smart Antennas Description

impatt diode

Abstract: IMPATT MA46045 radar impatt impatt diode operation MA46046 MA46019-MA46048 MA46019 MIL-STD-750 METHOD 1031 GaAs impatt diode
Contextual Info: JVjfacßm MA46019-MA46048 Series High Power Pulsed GaAs IMPATT Diodes Features • HIGH PEAK OUTPUT 30W AT 9.0-10.0 GHz 12W AT 8.0-10.0 GHz 10W AT 5.5-17.5 GHz ■ HIGH EFFICIENCY — TYPICALLY 20% ■ BURNOUT RESISTANCE TO CIRCUIT MISMATCHES ■ HIGH RELIABILITY

impatt diode

Abstract: MA460 IMPATT GaAs impatt diode MA46019-MA46048 030NH MA46046 radar impatt MIL-STD-750 METHOD 1031 MA46019
Contextual Info: MA46019-MA46048 Series High Power Pulsed GaAs IMPATT Diodes Features • HIGH PEAK OUTPUT 30W AT 9.0-10.0 GHz 12W AT 8.0-10.0 GHz 10W AT 5.5-17.5 GHz ■ HIGH EFFICIENCY — TYPICALLY 20% ■ BURNOUT RESISTANCE TO CIRCUIT MISMATCHES ■ HIGH RELIABILITY ■ HIGH & LOW DUTY CYCLE OPERATION

diodes

Abstract: em 434 IMPATT gunn diodes Tuning Varactors varactors GUNN Diodes high frequency step recovery diodes PIN diodes
Contextual Info: M icro w ave S em ico nducto rs Contents PAGE Schottky Diodes Silicon Schottky Mixer Diodes . 404 Silicon Schottky Detector Diodes 408 Frequency Multiplier Diodes Silicon Step Recovery Diodes GaAs Multiplier Varactors Tuning Varactor Diodes Silicon Tuning Varactors

diode cross reference

Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Contextual Info: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE

pin diode gamma detector

Abstract: Tuning Varactors UHF schottky diode GaAs p-i-n diodes RF limiter PIN diode impatt diode IMPATT 10 GHz gunn diode 6 GHz PIN diode Microwave zero bias detector diodes
Contextual Info: TABLE OF CONTENTS SURFACE MOUNT PRODUCTS PIN DIODES IN SMQ SQUARE SURFACE MOUNT DIVERSITY SWITCHES DC-2 GHz HIGH POWER (4 PACKAGES . 6

gunn diodes

Abstract: AH443 GUNN impatt DH385 AH365 DH378 AH152 AH802 GaAs p-i-n diodes
Contextual Info: DIODES SELECTION GUIDE P R O D U C T S REF. D E S C R IP T IO N AH152 to AH 169 GaAs Abrupt tuning Varactors AH202 to AH240 GaAs Hyperabrupt tuning Varactors AH365 to AH380 GaAs Gunn Diodes 18-26GHz AH443 to AH497 GaAs Gunn Diodes (9-18GHZ) AH501 to AH539

GaAs Gunn Diode

Abstract: impatt APX378 GaAs
Contextual Info: DIODES INDEX ♦ DIODES SELEC TIO N GUIDE .13 ♦ DIODES SCREENING P R O C E D U R E S . 15

Contextual Info: LITTON IND/LITTON SOLI» SbE » • 5544200 0000502 b04 ■ LITT GALLIUM ARSENIDE PULSED IMPATT DIODES 9251 Series • • • • • • 5-21 GHz High Peak Output Power High Efficiency— Typically 18-20% Burnout Resistant to Circuit Mismatches High Reliability— Greater than 106 hrs M TTF

Diode LT 9250

Abstract: LT 9250 0/Diode LT 9250
Contextual Info: LITTON IND/LITTON SOLI» SbE D • SSMMSDG OODDSOG Ö31 ■ L I T T 7 - Ö / - Ö GALLIUM ARSENIDE CW IMPATT DIODES 9250 Series • • • • 5-21 GHz High C W Output Power High Efficiency— Typically 1 8 -2 0 % Burnout Resistant to Circuit Mismatches High Reliability— Greater than 106 hrs M TTF

Gunn Diode symbol

Abstract: Gunn Diode impatt diagram of gunn diode 00Q13CH DVE6900 DIODE in 5060 GaAs Gunn Diode varactor alpha 2025 ct
Contextual Info: ALPHA IND/ SEMICONDUCTOR MAE D • DSfiSHHB 00Q13CH ES2 * A L P High Q GaAs Tuning Diodes -T - C TM «t Features ■ ■ ■ 50 Percent Higher Q than Comparable Silicon Diodes Wide Tuning Ratio 25 and 45 Volt Series Types ■ ■ DVE4500 Series DVE6900 Series

diode Catalog

Abstract: impatt diode DVE4554 Gunn Diode impatt GaAs Gunn Diode DVE4550 DVE4575 DVE4570 S443
Contextual Info: 03 IND/ S E M I C O N D U C T O R 0585443 ALPHA DE'B 05Û5443 0DDD 5DD 7 1 ~ 0 3E 00 50 0 D t " 0 7 - / 9 High-“Q ” GaAs 25 Volt Series Tuning Diodes & & Features & • 50% Higher “ Q” Than Comparable Silicon Diodes • Wide Tuning Ratio • High Reliability and Space Qualified

diagram of gunn diode

Abstract: GUNN OSCILLATORS DVE4575 diodes tvb IMPATT
Contextual Info: High Q GaAs Tuning Diodes Features • ■ ■ 50 Percent Higher Q than Comparable Silicon Diodes Wide Tuning Ratio 25 and 45 Volt Series Types -J* DVE4500 Series DVE6900 Series Description The Alpha line of gallium arsenide tuning diodes offers the circuit designer expanded capability. The

ML4554

Abstract: impatt diode ML4557 IMPATT
Contextual Info: ML 4000 SERIES HIGH Q GaAs ABRUPT JUNCTION TUNING VARACTOR DIODES The ML 4500 Series of gallium arsenide microwave tuning varactors is a family of abrupt junction devices featuring "Q factors" in excess of 4000. T his series is specifically designed for broadband high Q tuning perform ance from VHF to

IMPATT

Abstract: diode gunn SA impatt diode
Contextual Info: INTRO DUC TIO N TCS PROFILE L E A D E R S H IP It ha s b e e n 2 0 y e a rs s in c e T H O M S O N C S F S E M IC O N D U C T E U R S S P E C IF IQ U E S TC S m a nufa cture d its firs t G aA s FE T (Field E ffect T ransistor). T h rou ghou t this period, TCS

millimeter wave radar

Abstract: varactor multiplier frequency multiplier X3 millimeter gunn diode IMPATT MA48701A
Contextual Info: MA48700 Series GaAs Multiplier Varactors Features • HIGH CUTOFF FREQUENCY ■ OPERATING TEMPERATURES FROM - 65°C to + 200°C ■ GUARANTEED REPRODUCIBILITY Applications The MA48700 series of Gallium Arsenide Abrupt Junction Multiplier Varactors is specifically designed to provide

MICROWAVE ASSOCIATES

Abstract: IMPATT
Contextual Info: INTRODUCTION This catalog of microwave and RF semiconductor products from M/A-COM Burlington Semiconductor Operations represents more than 40 years of world leadership in supplying the industry with high performance, high quality semiconductor products. The technology

schematic WELDER

Abstract: gold melting furnace ultrasonic bond
Contextual Info: Bonding and Handling Procedures for Chip Devices DISCUSSION Chip diode devices for use in integrated circuit and hybrid integrated circuits have proliferated in the last few years. Today's circuit designer is faced with a multiplicity of alter­ natives in the selection of diodes and packaging with each

Contextual Info: Pgfltt G E C P L E S S E Y DS3410-1.2 DC4600/4700 Series GaAs HYPERABRUPT TUNING VARACTORS The introduction of hyperabrupt junction varactors brings the advantages of linear electronic tuning to the microwave circuit designer. GEC Plessy Semiconductors Microwave's

varactor diode capacitance measurement

Abstract: impatt diode Gunn diode GaAs Gunn Diode "94 GHz" radar gunn diode GaAs Gunn Diode impatt varactor diode high frequency GHz MA48700 Gunn Diode e band
Contextual Info: M/A-COM S E N ICOND tBRLNGTON 11 D • SbM22m ÜGG14DG M ■MIC A fiA s A y fi T - 0 7 - ii MA48700 Series GaAs Multiplier Varactors Features ■ HIGH CUTOFF FREQUENCY r ~\ ■ OPERATING TEMPERATURES FROM - 65°C to + 200°C ■ GUARANTEED REPRODUCIBILITY

GUNN DIODE plessey

Abstract: E1018 impatt Gunn Diode plessey impatt DC4702-3 barrier varactor gunn diode oscillator DC4601-4 DC4602-3
Contextual Info: 37tflSE2 0 0 1 8 5 7 0 1TE • P L S B Si GEC PLESSEY S E M I C O N D U C T O R S D S 3 4 1 0 - 1.2 DC4600/4700 Series GaAs HYPERABRUPT TUNING VARACTORS The introduction of hyperabrupt junction varactors brings the advantages of linear electronic tuning to the microwave

NE800296

Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
Contextual Info: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in