GAAS Search Results

Contextual Info: GaAs IRED a PHOTO -TRIAC TLP3041,3042,3043 T E N T A T I V E DATA OFFICE MACHINE. Unit in mm HOUSEHOLD USE EQUIPMENT. TRIAC DRIVER. SOLID STATE RELAY. The TOSHIBA TLP3041, TLP3042 and TLP3043 consist of a zero voltage crossing turn-on photo-triac optically

Contextual Info: GaAs IRED S PHOTO-TRANSISTOR TLP126 T IP I2 6 P R O G R A M M A B L E C O N TR O LLERS A C /D C -IN P U T M O D U L E T E L E C O M M U N IC A T IO N The TOSHIBA MINI FLAT COUPLER TLP126 is a small outline coupler, suitable for surface mount assembly.

Low Drop Out Regulators

Abstract: 7585C DIL 16
Contextual Info: o UCC2930-3\UCC3930-3 IIMTKORATKO C IR C U IT S ADVANCED INFORMATION UNITRODE Cellular Telephone Power Converter DESCRIPTION FEATURES BiCMOS Low Power RF/Cellular power management Negative 2.5 Volt @ 5 m A regulator for GaAs MESFET Separate Micro-power 3.3 V logic

dg1u

Abstract: TLP624
Contextual Info: TLP624,-2,-4 GaAs IRED a PHOTO-TRANSISTOR TLP6 24 PRO G RAM M ABLE CONTROLLERS AC /DC-INPUT M ODULE TELECOM M UNICATIO N The TOSHIBA TLP624, -2 and -4 consist of a gallium arsenide infrared emitting diode optically coupled to a photo-transistor. The TLP624-2 offers two isolated channels in an eight lead plastic

TIM1414-4LA-371

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation

TLP338

Contextual Info: TLP337,338 GaAs IRED a PHOTO-TRANSISTOR TENTATIVE DATA TELECOMMUNICATION. OFFICE MACHINE. TELEPHONE USE EQUIPMENT. The TOSHIBA TLP337 and TLP338 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.

types of scr packages

Contextual Info: 1. General Information Toshiba's photocouplers incorporate into w hite mold packages a com bination of either GaAs infrared LEDs or GaAIAs infrared LEDs and silicon photo-detectors GaAIAs LEDs are adopted in the high-speed photo-IC types by utilizing their features of high speed and high light pow er

TLSG126

Contextual Info: TOSHIBA TLSG126 TOSHIBA LED LAMP GaAsP RED/GaP GREEN LIGHT EMISSION T L S G 126 DUAL COLOR PANEL CIRCUIT INDICATOR • A ll P lastic Mold Type • Milky Diffused Lens • Low Drive Current, High Intensity Red or Green Light Emission. U nit in mm Recommended Forward Current : Ijr = 10~15m A DC

Contextual Info: MICROWAVE POWER GaAs FET TOSHIBA TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Pinch-off Voltage Saturated Drain Current Gate-SourceBreakdown Voltage Thermal Resistance MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000

TLP639

Abstract: TLP639-F TLP639F VDE-0110
Contextual Info: TLP639F GaAs IRED a PHOTO-TRANSISTOR TENTATIVE DATA Unit in mm OFFICE MACHINE HOUSEHOLD USE EQUIPMENT 6 5 4 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA TLP639F consists of two gallium arsenide infrared emitting diode connected inverse parallel,

POUT315

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL-081 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • ■ LOW INTERMODULATION DISTORTION HIGH GAIN IM3=-45dBc a t Po=31.5dBm GldB=8.0dB at 5.9GHz to 6.4GHz Single C arrier Level BROAD BAND INTERNALLY MATCHED

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package

TGF1350

Contextual Info: Texas Instruments TGF1350 Low-Noise Microwave GaAs FET Features • 1.5-dB noise figure with 11 -dB associated gain at 10 GHz ■ 2.2-dB noise figure with 7-dB associated gain at 18 GHz ■ All-gold metallization ■ Recessed 1/2-^m gate structure ■ Si3N4 channel passivation

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m , Single Carrier Level • High po w e r - PidB = 39-5 d B m at 5.9 G H z to 6.4 GHz

Contextual Info: TPS9103 POWER SUPPLY FOR GaAs POWER AMPLIFIERS SLVS131A - JULY 1996 Charge Pump Provides Negative Gate Bias for Depletion-Mode GaAs Power Amplifiers GATE_BIAS □ = 10 VCC C1c i+ BATTJN BATTJN BATTJN PGP PG GND 2 3 4 5 6 7 8 9 10 135-mli High-Side Switch Controls Supply

Contextual Info: GaAs IRED a PHOTO-TRANSISTOR TLP130 TLP130 U nit in mm P R O G R A M M A B L E CO NTRO LLER S A C /D C - IN P U T M O D U L E T E L E C O M M U N I C A T IO N The TOSHIBA MINI FLAT COUPLER TLP130 is a small outline coupler, suitable for surface m ount assembly.

Contextual Info: TLP572 GaAs IRED S PHOTO-TRANSISTOR TLP572 P R O G R A M M A B L E C ONTRO LLERS A C /DC - IN P U T M O D U L E SO LID STATE RELAY The TOSHIBA TLP572 consists of a darlington connected photo­ transistor optically coupled to a gallium arsenide infrared em itting

2500VRM

Contextual Info: GaAs IRED S PHOTO-TRANSISTOR 2 6 , 2 7 , 2 8 S H O rt { ¿ IN 2 5 (S h o r t > ) AC LINE/DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC /DIGITAL LOGIC ISOLATOR. TELEPHONE LINE RECEIVER. TWISTED PAIR LINE RECEIVER. HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL. RELAY CONTACT MONITOR.

TLY200

Contextual Info: TT TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA «DISCRETE/OPTO dF I t QTTSSQ OE31. 7CH2 99D 17092 TLY200 GaAsP YELLOW LIGHT EMISSION FEATURESi . ¿2 0 Large Size Lamp Consist of 6 Chips I . Lov Drive Current, High Intensity Yellow Light Emission Recommended Current : If»15— 20mA/Chip

Contextual Info: dT TOSHIBA -CDISCRETE/OPTOï J t OTTESO D017D42 O | ~ 99D 17042 9097250 TOSHIBA DISCRETE/OPTO DT-4l-a¡ TLYI32 GaAsP YELLOW LIGHT EMISSION Unit in ran FEATURES: • High Intensity I • All Plastic Mold Type: Light Yellow Transparent Lens. • Low Drive Current, High Intensity Yellow Light Emission.

RJ635

Contextual Info: TOSHIBA GaAs IRED & PHOTO-THYRISTOR TLP741J Office Machine Household Use Equipment Solid State Relay Switching Power Supply The Toshiba TLP741J consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.

TRW mmic

Contextual Info: TLH124C HEMT Image Rejection Downconverter GaAs Telecom Products Features RF frequency: 37 to 40 GHz Noise figure: 4.0 dB Conversion gain: 7.0 dB Self bias: 5V/95 mA Built-in LO drive amplifier Description and Applications The TLH124C is a monolithic HEMT low-noise image rejection downconverter designed for

Contextual Info: TOSHIBA TLP3540 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET T L P 3 540 Unit in mm M EM O R Y TESTERS LOGIC 1C TESTERS DATA RECORDING EQUIPMENT 7 6 5 CT1 n_ n l~P MEASURING EQUIPMENT TLP3540 is a photorelay and consists of a GaAs infrared emitting diode optically coupled to a photo-MOSFET in a 8-pin DIP package.

Contextual Info: TOSHIBA TLP3111 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET T• I Pm v? 1■ 1■ 1■ MEASUREMENT INSTRUMENTS LOGIC IC TESTERS/MEMORY TESTERS BOARD TESTERS/SCANNERS The TOSHIBA MINI FLAT PHOTO RELAY TLP3111 is a small outline photo relay, suitable for surface m ount assembly.