GAAS GUNN DIODE Search Results

gunn diodes

Abstract: AH443 GUNN impatt DH385 AH365 DH378 AH152 AH802 GaAs p-i-n diodes
Contextual Info: DIODES SELECTION GUIDE P R O D U C T S REF. D E S C R IP T IO N AH152 to AH 169 GaAs Abrupt tuning Varactors AH202 to AH240 GaAs Hyperabrupt tuning Varactors AH365 to AH380 GaAs Gunn Diodes 18-26GHz AH443 to AH497 GaAs Gunn Diodes (9-18GHZ) AH501 to AH539

gunn diodes

Abstract: DC1279F-T Gunn Diode gunn diode datasheet 10 GHz gunn diode DC1200-T gunn diode marconi Marconi gunn DC1278F-T DC1279D
Contextual Info: Millimetre Wave Graded Gap Gunn Diodes The DC1200-T series extends the range of high power, graded gap, GaAs CW Gunn diodes further into the millimetre wave frequency band. They offer superior stability where low df/dt, low df/dv and cold start turn-on are at a premium.

Gunn Diode

Abstract: gunn diode oscillator gunn diode generator Gunn Diode at power supply circuit two cavity resonator GaAs Gunn Diode 24 GaAs Gunn Diode impatt varactor diode for x band radar DIODE TH 5 N
Contextual Info: A ffe Application Note Gunn Diode/Oscillator M514 Description The Gunn diode is a gallium arsenide GaAs device capable of converting direct current (dc) power into radio frequency (RF) power when inserted in an appropriate cavity. This RF power is the result o f a bulk negative resistance property

Gunn Diode MA49156

Abstract: GaAs Gunn Diode 24 gunn diodes Gunn Diode e band x band gunn diode X-band marine radar gunn diode x band radar Gunn Diode 72 GHz MA49172 MA49156
Contextual Info: an A M P company GaAs Gunn Diodes MA49000 V 2.00 Case Styles Features See appendix for complete dimensions • Low Noise Characteristics From 5 to 100 GHz • Catalog or Custom Tailored Diodes • Pulse or CW Operation Description The MA49000 series of Gallium Arsenide Gunn diodes is

Contextual Info: HUGHES/ MICROWAVE PRDTS 1 TE D m 41313303 OOOOaiO =1 Gunn Diodes _ T :07-i| _ Hughes 4720xH series of GaAs Gunn Diodes are available for operation at any specified frequency between 26.5 and 95 GHz. Power output levels range from 20 mW at 95 GHz to

Gunn Diode MA49156

Abstract: gunn diodes MA49156 MA49148 MA49000 gunn diode x band radar x-band gunn diode MA49508 MA49152 Gunn Diode e band
Contextual Info: an A M P company GaAs Gunn Diodes MA49000 V 2.00 Case Styles Features See appendix for complete dimensions • Low Noise Characteristics From 5 to 100 GHz • Catalog or Custom Tailored Diodes • Pulse or CW Operation Description The MA49000 series of Gallium Arsenide Gunn diodes is

Contextual Info: P ^p jlG E C P L E S S E Y DS3420-1.2 DC1270/1220 Series MILLIMETRE WAVE GUNN DIODES STANDARD AND GRADED GAP The introduction of the DC1270/DC1220 Series extends the range of high power standard and graded-gap GaAs CW Gunn diodes further into the millimetre wave frequency

DC4303A

Abstract: Marconi gunn gunn diode datasheet Gunn Diode gunn diode marconi DC4303B Gunn Diode at power supply circuit DC4301A DC4301B DC4302A
Contextual Info: Gallium Arsenide Tuning Varactors This range of epitaxial GaAs Schottky barrier variable capacitance diodes is designed primarily for electronic tuning of Gunn and transistor microwave oscillators. They have the advantage over silicon tuning diodes in that the required change in capacitance occurs

GUNN DIODE

Abstract: radar gunn diode gunn diode radar Gunn Diode symbol Gunn Diode microwave transmitter gunn diode datasheet MWT-GK gunn diode oscillator GaAs Gunn Diode OUTPUT POWER OF A GUNN DIODE OSCILLATOR
Contextual Info: MwT-GK K-band 18-26.5GHz Gunn Diode Preliminary Features: K-band (18-26.5 GHz) frequency source applications Excellent frequency chirp performance Pulsed or CW operation 20 years of proven performance & reliability Processed in MwT captive GaAs fab Available in packaged or die form

ML40150

Abstract: HTRB ML4409 ML40019 ML4626 ml4558 ML4661P ML456 ml4627 ML4405
Contextual Info: Space Qualified Diodes ML4000 Series V2.00 GaAs Gunn Diodes Operating Frequency 5 to 8GHz 8 to 12.4GHz 12.4 to 18.0GHz 18.0 to 22.0GHz 22.0 to 27.0GHz 27.0 to 32.0GHz 32.0 to 40.0GHz 40.0 to 50.0GHz 50.0 to 60.0GHz 90.0 to 100.0GHz Minimum Output Power Po mW

ML4000

Abstract: diodes chart ML40150 ML4923 ML40019
Contextual Info: M an AMP com pany Space Qualified Diodes ML4000 Series V2.00 GaAs Gunn Diodes Minimum Output Power Po mW Operating Frequency 5 to 8GHz 8 to 12.4GHz 12.4 18.0 22.0 27.0 32.0 40.0 50.0 90.0 to to to to to to to to 18.0GHz 22.0GHz 27.0GHz 32.0GHz 40.0GHz 50.0GHz

ODS-119

Abstract: ML40150
Contextual Info: M MOM m an A M P com pany Space Qualified Diodes ML4000 Series GaAs Gunn Diodes Operating Frequency 5 to 8GHz 8 to 12.4GHz 12.4 18.0 22.0 27.0 32.0 40.0 50.0 90.0 to to to to to to to to Maximum Operating Current Minimum Output Power Po mW 18.0GHz 22.0GHz

Contextual Info: LITTON IND/LITTON SOLID SbE D 5544200 ODDQMTb SÔD • LITT J Z - ([ ■ GUNN DIODES HIGH FREQUENCY 22 to 110 GHz FEATURES • • • • • • GaAs and InP Devices High Efficiency Low Package Parasitics High Reliability Low FM and AM Noise Good Power and Frequency Stability

GaAs Gunn Diode "94 GHz"

Abstract: gunn diode radar 10 GHz gunn diode
Contextual Info: AjfetXm Electronically Tuned Gunn Oscillators 18-140 GHz 6 WG V Series 6-42V & 6-28V Features • ■ ■ ■ ■ ■ ■ Series GaAs or InP Electronic Tuning to 4 GHz Excellent Linearity O utput Power to 200 mW Small and Lightweight Optional Mechanical Tuning

DC1277

Abstract: DC1279F-T DC1276 DC1270 Gunn Diode e band DC1277G-T DC1278F DC1279C DC1279F 018ph diode
Contextual Info: 37bâ£22 DOlflS'îO TSD « P L S B Si GEC P L E S S E Y S E M I C O N D U C T O R S D S3420-1.2 DC1270/1220 Series MILLIMETRE WAVE GUNN DIODES STANDARD AND GRADED GAP Tha introduction of the DC1270/DC1220 Series extends the range of high power standard and graded-gap GaAs

ge 6065 b

Abstract: GE 6065 AH370 AH682 AH443 Thomson ah370 AH655 AH612 ah616 AH610
Contextual Info: AH365.AH380/AH443.AH802 GaAs GUNN P O W E R G E N E R A T I O N D I O D E S FEATURES O perating fre q u e n c y range 8 to 100G H z Low noise c ha racte ristics from 8 to 100G H z C a s e s ty le fle x ib ility : W 2, W 3, W 4, W 5, F27d, F60 . Em itting p o w e r : 10 to 400 m W

6953-B

Abstract: 7812A AH413 700201 CV2154 AH370 ML40150 DH 408 diode dmf 612 14094 b
Contextual Info: ML 4000 SERIES EQUIVALENT PARTS LIST The majority o f C.V. register and commercial microwave diodes can be provided depending on demand. M/A-COM Ltd also provides a second source of direct equivalents to other manufacturers devices, the majority o f which are approved for space use. A comprehensive equivalents list is provided below.

diode cross reference

Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Contextual Info: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE

gunn diode generator

Contextual Info: GEC P L E S S E Y CT3513-1.2 GUNN DIODES - INTRODUCTION INTRODUCTION 1.1. Basic Gunn Diode Action There are two energy levels A and B— also known as Valleys—with the following properties: The variation of current with field for a perfect two terminal gallium arsenide device is shown in simplified form in Fig.1.

diodes

Abstract: em 434 IMPATT gunn diodes Tuning Varactors varactors GUNN Diodes high frequency step recovery diodes PIN diodes
Contextual Info: M icro w ave S em ico nducto rs Contents PAGE Schottky Diodes Silicon Schottky Mixer Diodes . 404 Silicon Schottky Detector Diodes 408 Frequency Multiplier Diodes Silicon Step Recovery Diodes GaAs Multiplier Varactors Tuning Varactor Diodes Silicon Tuning Varactors

Gunn Diode

Abstract: Microwave Silicon Detector Diode DW9248 microwave waveguide Marconi gunn Silicon Detector UHF diode varactor diode filter varactor
Contextual Info: Product List TYPE No. DESCRIPTION DA1304 DA1307 MILLIMETRE WAVE BALANCED MIXER 34.0 to 34.4GHz BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER

GaAs Gunn Diode

Abstract: impatt APX378 GaAs
Contextual Info: DIODES INDEX ♦ DIODES SELEC TIO N GUIDE .13 ♦ DIODES SCREENING P R O C E D U R E S . 15

gunn diodes

Abstract: gunn diode datasheet MG1005-11 Gunn Diode gunn MG1001 MG1007-15 10 GHz gunn diode MG1061 MG1040-16
Contextual Info: GUNN Diodes Cathode Heat Sink TM MG1001 – MG1061 Discrete Frequency: Cathode Heatsink Features ● CW Designs to 500 mW ● Pulsed Designs to 10 W ● Frequency Coverage Specified from 5.9–95 GHz ● Low Phase Noise ● High Reliability Applications

gunn diodes

Abstract: Gunn Diode gunn diode datasheet mg1052-11 GUNN MG1059-11 gunn diode radar radar gunn diode MG1041 MG1054
Contextual Info: GUNN Diodes Anode Heat Sink TM MG1041 – MG1059 Features ● High Reliability ● Low-Phase Noise ● 9.5–35.5 GHz Operation ● Pulsed and CW Designs to 20 mW Applications ● Motion Detectors ● Transmitters and Receivers ● Beacons ● Automotive Collision Avoidance Radars