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    GAAS FET HEMT CHIPS Search Results

    GAAS FET HEMT CHIPS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CLF1G0035-100P
    		Rochester Electronics LLC CLF1G0035-100 - 100W Broadband RF power GaN HEMT PDF Buy
    PEF24628EV1X
    		Rochester Electronics LLC PEF24628 - SOCRATES Four-channel SHDSL EFM system-on-chip PDF
    GCM32ED70J476KE02L
    		Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive PDF
    GRM022R61C104ME05L
    		Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose PDF
    GRM033D70J224ME01D
    		Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose PDF

    GAAS FET HEMT CHIPS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    7400A

    Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions


    Original     		PDF

    12QHz

    Abstract: FSX027X GaAs FET HEMT Chips fujitsu gaas fet
    Contextual Info: FSX027X - GaAs FET & HEMT Chips FEATURES • Medium Power Output: P-|dB=24.5dBm Typ. @8.0GHz • High Power Gain: GidB=10dB(Typ.)@ 8.0GHz • Proven Reliability DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium


    OCR Scan     		FSX027X FSX027X 12GHz. FCSI0598M200 12QHz GaAs FET HEMT Chips fujitsu gaas fet PDF

    2SK676

    Abstract: GaAs FET HEMT Chips
    Contextual Info: 2SK676H5 SONY AIGaAs/GaAs Low Noise Microwave HEMT CHIP Description Chip outline Unit: jum The 2SK 676H 5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron gate FET features very low noise figure and high


    OCR Scan     		2SK676H5 2SK676H 2SK676 GaAs FET HEMT Chips PDF

    FLC087XP

    Contextual Info: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general


    Original     		FLC087XP FLC087XP PDF

    GaAs FET HEMT Chips

    Abstract: Fujitsu 511 FLC08
    Contextual Info: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general


    Original     		FLC087XP FLC087XP FCSI0598M200 GaAs FET HEMT Chips Fujitsu 511 FLC08 PDF

    Contextual Info: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general


    Original     		FLC087XP FLC087XP PDF

    GaAs FET HEMT Chips

    Abstract: GaAs FET chip FLC087XP C-Band Power GaAs FET HEMT Chips
    Contextual Info: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general


    Original     		FLC087XP FLC087XP GaAs FET HEMT Chips GaAs FET chip C-Band Power GaAs FET HEMT Chips PDF

    FLC087XP

    Abstract: FUJITSU RF 053 GaAs FET HEMT Chips
    Contextual Info: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general


    Original     		FLC087XP FLC087XP 17serve FCSI0598M200 FUJITSU RF 053 GaAs FET HEMT Chips PDF

    Contextual Info: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for


    Original     		FLK017XP FLK017XP 15hods PDF

    Contextual Info: FLC157XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 31.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 29.5%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate The FLC157XP chip is a power GaAs FET that is designed for


    Original     		FLC157XP FLC157XP PDF

    Contextual Info: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for


    Original     		FLK017XP FLK017XP PDF

    Contextual Info: FLK057XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Drain Source The FLK057XV chip is a power GaAs FET that is designed for


    Original     		FLK057XV FLK057XV PDF

    fujitsu hemt

    Contextual Info: FLK057XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Drain Source The FLK057XV chip is a power GaAs FET that is designed for


    Original     		FLK057XV FLK057XV FCSI0598M200 fujitsu hemt PDF

    GaAs FET HEMT Chips

    Abstract: FLK057XV
    Contextual Info: FLK057XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Drain Source The FLK057XV chip is a power GaAs FET that is designed for


    Original     		FLK057XV FLK057XV GaAs FET HEMT Chips PDF

    FLK017XP

    Abstract: GaAs FET HEMT Chips
    Contextual Info: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for


    Original     		FLK017XP FLK017XP FCSI0598M200 GaAs FET HEMT Chips PDF

    FLK057XV

    Contextual Info: FLK057XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Drain Source The FLK057XV chip is a power GaAs FET that is designed for


    Original     		FLK057XV FLK057XV FCSI0598M200 PDF

    108 to 174 mhz

    Abstract: FLK027XP FLK027XV
    Contextual Info: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is


    Original     		FLK027XP, FLK027XV FLK027XV FCSI0598M200 108 to 174 mhz FLK027XP PDF

    1278n

    Contextual Info: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is


    Original     		FLK027XP, FLK027XV FLK027XV 1278n PDF

    Contextual Info: FLK057XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Drain Source The FLK057XV chip is a power GaAs FET that is designed for


    Original     		FLK057XV FLK057XV PDF

    Contextual Info: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is


    Original     		FLK207XV FLK207XV PDF

    Contextual Info: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is


    Original     		FLK027XP, FLK027XV FLK027XV FLK027XP PDF

    FLK207XV

    Abstract: GaAs FET HEMT Chips
    Contextual Info: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is


    Original     		FLK207XV FLK207XV FCSI0598M200 GaAs FET HEMT Chips PDF

    GaAs FET HEMT Chips

    Abstract: 1756 N2 C-Band Power GaAs FET HEMT Chips 1060 fet FLC157XP 682 FET
    Contextual Info: FLC157XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 31.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 29.5%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate The FLC157XP chip is a power GaAs FET that is designed for


    Original     		FLC157XP FLC157XP GaAs FET HEMT Chips 1756 N2 C-Band Power GaAs FET HEMT Chips 1060 fet 682 FET PDF

    GaAs FET HEMT Chips

    Abstract: 2064 fet FLK017XP DIE CHIP 51 FET
    Contextual Info: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for


    Original     		FLK017XP FLK017XP GaAs FET HEMT Chips 2064 fet DIE CHIP 51 FET PDF