2SK676H5 Search Results

Contextual Info: 2SK676H5-2 Transistors N-Channel UHF/Microwave HEMT V BR DSS (V)5 V(BR)GSS (V) I(D) Max. (A)70m P(D) Max. (W) Maximum Operating Temp (øC) I(DSS) Min. (A)10m I(DSS) Max. (A)70m @V(DS) (V) (Test Condition)2 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.25m

Contextual Info: SONY CORP/COMPONENT P RODS M^E D • 6362363 0003113 b «SONY 2SK676H51 SONY. AtGaAs/GaAs Low Noise Microwave HEM T GHIP Description Chip outline •Unit: jum The 2S K 676H 5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD M etal Organic Chemical Vapor Deposition . This 0.5 micron

2SK676

Abstract: GaAs FET HEMT Chips
Contextual Info: 2SK676H5 SONY AIGaAs/GaAs Low Noise Microwave HEMT CHIP Description Chip outline Unit: jum The 2SK 676H 5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron gate FET features very low noise figure and high

2SK653

Abstract: 2SK652 2SK671 Gv-80dB 2SK674 2SK650 2SK669 150ni 2SK677 2SK649
Contextual Info: - 60 - M £ ft ffl € & flt £ f •ç !• 4 1 H 2S K 6 4 8 m X [H# * * V æ fê ft £ * (V) * P d/Pch I gss (W) (max) (A) Vg s (V) ^ (min) (A) (max) (A) Vd s (V) W fî tt ( T a = 2 5 <C ) (min) (V) (max) V d s (V) (V) (min) (S) Id (A) (typ) V d s

2sk125

Abstract: SLD300 photo magneto electric 1T32 SLD203 ic dm 311 SGM2006M "CD pickup" 1T339
Contextual Info: 2. 1 Index by Usage Variable Capacitance Diodes Type 1T32 1T32A 1T33 1T33A Package 2P Mini mold 1T33C 1T362 1T363 2P Super Mini mold 1T364 1T359 2P Mini mold 1T360 Remark Application Voltage V) Page Smaller package UH F/V H F tuning 31 AC: 3% (1T32A: 2%)

sgh5002f

Abstract: SGM2004M 1T32 dm211 DM-111 DM-211 1T339 2SK152 SGM2006M phd003
Contextual Info: 1. Type Page List of Model Names Type Page Type Page 1T32/1T32A 31 SLD202U/V 73 SLU302XR 193 1T33/1T33A 34 SLD202U-3/V-3 76 SLU303VR 197 1T33C 37 SLD203AV 79 SLU303XR 201 1T339 335 SLD301B 102 SLU304VR 205 1T359 49 SLD301V 82 SLU304XR 209 1T360 51 SLD301WT