GAAS 12 GHZ GAIN Search Results

SPF-2086TKZ

Abstract: spf2086tkz SPF-2086TKZ applications 54-101 SPF-2086tk SPF2086TK hbt sot-86
Contextual Info: SPF-2086TKZ SPF-2086TKZ Low Noise pHEMT GaAs FET 0.1 GHz to 12 GHz Operation LOW NOISE pHEMT GaAs FET 0.1 GHz to 12 GHz OPERATION NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: SOT-86 Product Description Features Si BiCMOS SiGe HBT 20 10

TRANSISTOR C 6090 lg

Abstract: TRANSISTOR C 6090 TC1101 8484 au
Contextual Info: TRANSCOM TC1101 January 2002 Low Noise and Medium Power GaAs FETs FEATURES • Low Noise Figure: PHOTO ENLARGEMENT NF = 0.5 dB Typical at 12 GHz • High Associated Gain: Ga = 12 dB Typical at 12 GHz • High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz

transistor nec D78

Abstract: D78 NEC NEC D73 d3055 J100 J150 NE76000 transistor d176
Contextual Info: DATA SHEET GaAs MES FET NE76000 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • CHIP DIMENSIONS Unit: Pm Low noise figure NF = 1.6 dB TYP. at f = 12 GHz High associated gain 450 57 Ga = 9.0 dB TYP. at f = 12 GHz DRAIN DRAIN VDS 5.0 V

SPF 455

Abstract: SPF-1576 SPF 455 H 5 SPF-1676
Contextual Info: SPF-1576, -1676 2-26 GHz Low Noise PHEMT GaAs FET Preliminary Data Features - Pseudomorphic HEMT Technology - Low Noise Figure: 0.55dB Typical at 12 GHz - High Associated Gain: 10dB Typical at 12 GHz • Low Cost Ceramic Package - Tape and Reel Packaging Available

DC TO 20GHZ RF AMPLIFIER MMIC

Abstract: Mach-Zehnder modulator Traveling Wave Amplifier DC-20 MAAPSM0015 VD196 dc to 12 GHz driver amplifier
Contextual Info: DC-20 GHz GaAs MMIC Amplifier Preliminary MAAPSM0015 Rev. 2.0 DC-20 GHz GaAs MMIC Amplifier Features ¢ ¢ ¢ ¢ ¢ ¢ ¢ Wide Frequency Range: DC-20 GHz On Chip Bias Network High Gain : 11 dB Gain Flatness: + 0.75 dB Typical Psat: 21 dBm Return Loss: 12 dB

MA2810

Abstract: NBB-302T1 NBB-302T3 84-1LMI DC-12 NBB-300-D NBB-302 NBB-302-D NBB-302-E RF Nitro Communications
Contextual Info: Cascadable Broadband GaAs MMIC Amplifier NBB-302 DC-12 GHz 6000036 Rev. A Features • • • 1 • • Reliable Low-Cost HBT Design 12 dB Gain, +13.7 dBm P1dB @ 2 GHz High P1dB of +14 dBm at 6.0 GHz and +11.0 dBm at 14.0 GHz Single Power Supply Operation

MwT-371

Abstract: 371 fet
Contextual Info: MwT-3 26 GHz High Power GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns CHIP THICKNESS = 125 FEATURES 50 • 11 dB SMALL SIGNAL GAIN AT 12 GHz • +21.0 dBm OUTPUT POWER AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 300 MICRON GATE WIDTH

Contextual Info: MwT-15 26 GHz Power GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 FEATURES 75 • +24 dBm POWER OUTPUT AT 12 GHz • 9.5 dB SMALL SIGNAL GAIN AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 630 MICRON GATE WIDTH 241 72 35 52 35 50 52 775 35

MMA612

Contextual Info: MMA612 DC to 12 GHz Amplifier MMA612 Die Description: Features: The MMA612 is a fully matched Darlington Amplifier Die, constructed with reliable InGaP-GaAs HBT technology. Exhibits extremely flat gain response over the operating band. • • • DC - 12 GHz Broadband Gain Block.

Contextual Info: TOSHIBA TPM1818-30 MICROWAVE POWER GaAs FET High Power GaAs FETs L, S-Band Features • High power • P-idB = 44.5 dBm at 1.8 GHz • High gain - G idB = 12 dB at 1.8 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TPM1818-30 High Power GaAs FETs L, S-Band Features • High power - P idB = 44.5 dBm at 1.8 GHz • High gain - G-idB = 12 dB at 1.8 GHz • Partially m atched type • H erm etically sealed package RF Performance Specifications (Ta = 25° C)

mwt-970

Abstract: 16662 ic 74390 61787
Contextual Info: MwT-9 M ic r o w ave 18 GHz High Power GaAs FET T echno lo g y ri iiiniiiMiiii! +26 dBm OUTPUT POWER AT 12 GHz 8.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 750 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES - • _ I

NE722S01

Abstract: NEC Ga FET marking A mesfet lnb NE722S01-T1 NE722S01-T1B1
Contextual Info: C TO X BAND N-CHANNEL GaAs MES FET NE722S01 OUTLINE DIMENSION FEATURES • HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz 2.0 – 0.2 • LOW NOISE/HIGH GAIN: NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz

Contextual Info: MwT-A1 12 GHz High Gain GaAs FET M ic r o w a v e T e c h n o l o g y Units in tun I T 10 dB GAIN A T 12 GHz EXCELLENT FOR FEEDBACK AMPLIFIER APPLICATIONS 100 MHz T O 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE

Ablestik

Abstract: 140.06 84-1LMI NDA-410-D 6000053 10420
Contextual Info: GaInP/GaAs HBT MMIC Distributed Amplifier NDA-410-D DC-11 GHz 6000053 Rev. A 1 Features Applications • • • • • • • Reliable low-cost HBT-based design 12 dB Gain, +14.6 dBm P1dB @ 2 GHz High P1dB of +14.5 dBm at 6.0 GHz and +10.8 dBm at 14.0 GHz

NE76083A

Abstract: lg 83a
Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz 4 • HIGH ASSOCIATED GAIN GA = 9 dB TYP at f = 12 GHz • ION IMPLANTATION DESCRIPTION 21

NE76084-T1

Abstract: NE76083A NE76084S 4439 gm
Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz 4 • HIGH ASSOCIATED GAIN GA = 9 dB TYP at f = 12 GHz • ION IMPLANTATION • AVAILABLE IN TAPE & REEL

NE76084

Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NE76084 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz < HIGH ASSOCIATED GAIN Ga = 9 dB TYP at f = 12 GHz • L g = 0.3 im , W g = 280 Jim . LOW COST METAL/CERAMIC PACKAGE

HFET-2201

Abstract: sealectro Adams-Russell hewlett packard application bulletin 73 HFET2201 10GH IS211 8542B sealectro 52 111 HPAC
Contextual Info: H E W L E T T ^ PACKARD COMPONENTS LOW NOISE BROADBAND MICROWAVE GaAS FET HFET-2201 Features LOW NOISE FIGURE 2.4 dB Typical NF at 10 GHz 3.1 dB Typical NF at 14 GHz HIGH MAXIMUM AVAILABLE GAIN 14.5 dB Typical Ga max at 10 GHz HIGH OUTPUT POWER 12 dBm Linear Power at 10 GHz

ISO220 package

Abstract: MWT273HP MwT-273 ISO220
Contextual Info: MwT-2 26 GHz High Power GaAs FET M ic r o W a v e T e c h n o l o g y Units in urn • • • • • +24.5 DBM OUTPUT POWER AT 12 GHZ 9 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAUGOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES

transistor 2xw

Abstract: 38GHz T485B S11 INFINEON
Contextual Info: T485B_LNA GaAs 38 GHz Low Noise Amplifier MMIC • 2 Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier • Input/Output matched to 50 Ohm • Frequency range: 35 GHz to 40 GHz • Noise figure < 4.5 dB • Gain > 14 dB • P-1dB > 12 dBm, Psat > 15 dBm

NEC 2561

Abstract: nec 2561 le NEC 2561 LE 301 sem 2105 16 pin saa 1074 SAA 1061 nec 2561 4 pin cp 1099 c 945 p 331 saa 1049
Contextual Info: PRELIMINARY DATA SHEET_ NEC GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 yum recessed gate • Gate Width : Wg = 400 ym

CFY30

Abstract: CFY 18
Contextual Info: SIEMENS CFY30 GaAs FET Datasheet * Low noise Fw„ = 1.4 dB @ 4 G H z * High gain (11.5 dB typ. @ 4 G H z) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation

NBB-310-E

Abstract: 84-1LMI DC-12 NBB-310 NBB-310-D NBB-310T1 NBB-310T3 sq 1265 rf
Contextual Info: Cascadable Broadband GaAs MMIC Amplifier NBB-310 DC-12 GHz 6000038 Rev. A Features 1 • • • • • Reliable Low-Cost HBT Design 12 dB Gain High Output Power Design Single Power Supply Operation 50 Ω Input/Output Matched for High-Frequency Utilization.