G746 ROHS Search Results

H11S

Abstract: G746 shinetsu H46S G746 shinetsu G746 g-746 shinetsu G746 rohs
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-042-C Date : 14th Dec. 2007 Rev.date : 7th Jan. 2010 Prepared : Y.Tanaka Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RECOMMENDATION of THERMAL COMPOUND APPLYING

Contextual Info: 600 V, TBD A, IGBT FGD633 Preliminary Features Package  Low Saturation Voltage  High Speed Switching  With Integrated Low VF Fast Recovery Diode  RoHS Compliant TO-3PF-3L  VCE - 600 V  IC-TBD A TC = 100 °C

shinetsu G746

Abstract: shinetsu G746 rohs G746 shinetsu G746 H11S G746 rohs
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-GEN-042-D Date : 14th Dec. 2007 Rev. date : 22th Jun. 2010 Rev.date : 7th Jan. 2010 Prepared : Y.Tanaka Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RECOMMENDATION of THERMAL COMPOUND APPLYING

Contextual Info: 600 V, 20 A, IGBT MGT632 Preliminary Features Package  Low Saturation Voltage  High Speed Switching  RoHS Compliant TO-247-3L 4 C  VCE - 600 V  IC-20 A (TC = 100 °C)

Contextual Info: 600 V, 20 A, IGBT MGD632 Preliminary Features Package  Low Saturation Voltage  High Speed Switching  With Integrated Low VF Fast Recovery Diode  RoHS Compliant TO-247-3L 4 C  VCE - 600 V

Contextual Info: 600 V, 37 A, IGBT MGT633 Preliminary Features Package  Low Saturation Voltage  High Speed Switching  RoHS Compliant TO-247-3L 4 C  VCE - 600 V  IC-37 A (TC = 100 °C)

SK 8001FFE

Abstract: 8001ffe SI-8001FFE RK46 G746 SC102 YG6260 50V1A TOSHIBA TV SMPS Tv Diagram toshiba
Contextual Info: SI-8001FFE DC-to-DC Step-Down Converter Features and Benefits Description ▪ 3.5 A output current supplied in a small, through-hole mount power package ▪ High efficiency: 83% at VIN = 15 V, IO = 2.0 A,VO = 5 V ▪ Requires only six external components optional soft

RPER11

Abstract: 8008hf SI-8008HFE RPER11H475K5 shinetsu G746 rohs FMBG16 RPER11H RPER1
Contextual Info: SI-8008HFE DC-to-DC Step-Down Converter Features and Benefits Description ▪ 5.5 A output current supplied in a small, through-hole mount power package ▪ High efficiency: 83% at VIN = 15 V, IO = 3.0 A,VO = 5 V ▪ Requires only seven external components optional soft

Contextual Info: 600 V, 18 A, IGBT FGM633 Features Package  Low Saturation Voltage  High Speed Switching  RoHS Compliant TO-3PF-3L  VCE - 600 V  IC-18 A TC = 100 °C

RK16

Abstract: 8008T TO-220F-5
Contextual Info: SI-8008TFE DC-to-DC Step-Down Converter Features and Benefits Description ▪ 1.5 A output current supplied in a small, through-hole mount power package ▪ High efficiency: 81% at VIN = 15 V, IO = 0.5 A,VO = 5 V ▪ Requires only six external components optional soft

G746 rohs

Abstract: TO-220F-5 SI-8050TFE
Contextual Info: SI-8050TFE DC-to-DC Step-Down Converter Features and Benefits Description ▪ 1.5 A output current supplied in a small, through-hole mount power package ▪ High efficiency: 81% at VIN = 15 V, IO = 0.5 A,VO = 5 V ▪ Requires only four external components optional soft

SK 8001FFE

Abstract: SI-8000FFE 8001ffe SI-8001FFE SI-8001
Contextual Info: SI-8001FFE DC-to-DC Step-Down Converter Features and Benefits Description ▪ 3.5 A output current supplied in a small, through-hole mount power package ▪ High efficiency: 83% at VIN = 15 V, IO = 2.0 A,VO = 5 V ▪ Requires only six external components optional soft

STR-W6750

Abstract: STR-W6756 strw6756 Application Note 28103.30 strw6750 data sheet str w6756 STR W6750 str w6756 str w6750 f w6756
Contextual Info: STR-W6756 Data Sheet 28103.33* ih ng rs tc lato i Sw egu R Universal-Input/140 W Off-Line QuasiResonant Flyback Switching Regulator ABSOLUTE MAXIMUM RATINGS at TA = +25°C Control Supply Voltage, VCC . . . . 35 V Drain-Source Voltage, VDSS . . . . . . 650 V

STR-W6753 circuit diagram

Abstract: STR-W6750 STR-W6753 circuit STR-W6753 STR-W6754 circuit diagram strw6750 STR-W6756 STRW6753 STR-W6754 STR-W6753 diagram
Contextual Info: STR-W6753 Data Sheet 28103.31 ih ng rs tc lato i Sw egu R Universal-Input/58 W Off-Line QuasiResonant Flyback Switching Regulator ABSOLUTE MAXIMUM RATINGS at TA = +25°C Control Supply Voltage, VCC . . . . 35 V Drain-Source Voltage, VDSS . . . . . . 650 V

STR-W6754 circuit diagram

Abstract: STR-W6754 STR-W6750 STR-W6756 STRW6754 w6754 STR-W6754 circuit diagram detail strw6750 STR-W6754 power supply str W6754
Contextual Info: STR-W6754 Data Sheet 28103.32* ih ng rs tc lato i Sw egu R Universal-Input/100 W Off-Line QuasiResonant Flyback Switching Regulator ABSOLUTE MAXIMUM RATINGS at TA = +25°C Control Supply Voltage, VCC . . . . 35 V Drain-Source Voltage, VDSS . . . . . . 650 V

mp1526

Abstract: MN1526 "Sanken power transistor"
Contextual Info: 260 V, 15 A Silicon NPN Epitaxial Planar Bipolar Transistor MN1526 Features Package  Adopt LAPT Structure  Kept hFE-IC Linearity “Flat” to High current  Improved Switching Characteristics  High Frequency  Exceptional Safe Operation Area

mp1526

Contextual Info: − 260 V, − 15 A Silicon PNP Epitaxial Planar Bipolar Transistor MP1526 Features Package  Adopt LAPT Structure  Kept hFE-IC Linearity “Flat” to High current  Improved Switching Characteristics  High Frequency  Exceptional Safe Operation Area

2SC4832

Abstract: c6011 sanken c6011 2sc6011 Sanken Transistor Mt 200 2SA2151 sanken high power audio amplifier SANKEN AUDIO c6011 transistor 2SA21
Contextual Info: 2SC6011 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown

Contextual Info: VRM = 200 V, IF AV = 45 A, trr = 35 ns(max.) Fast Recovery and High Power Diode CTXS-4452S Features Package The CTXS-4452S is a high current and fast recovery diode which realize a peak reverse voltage of 200V, a typical forward voltage drop of 0.92V and typical

XS460

Contextual Info: VRM = 300 V, IF AV = 60 A, trr = 50 ns(max.) Fast Recovery and High Power Diode CTXS-4603S Features Package The CTXS-4603S is a high power and fast recovery diode which realize a peak reverse voltage of 300 V, a typical forward voltage drop of 1.05 V (typ.) and typical

Contextual Info: VRM = 600 V, IF AV = 20 A, trr = 30 ns(max.) Fast Recovery and High Power Diode Preliminary CTLD-6206S Features Package The CTLD-6206S is a high power diode of the low-noise and low loss which realize a peak reverse voltage of 600 V. Typical forward voltage drop of 1.4 V

XS460

Contextual Info: VRM = 600 V, IF AV = 60 A, trr = 35 ns(max.) Fast Recovery and High Power Diode CTXS-4606S Features Package The CTXS-4606S is a high power diode of the low-noise and low-loss which realize a peak reverse voltage of 600V. Typical forward voltage drop of 1.45V

XS4202

Contextual Info: VRM = 200 V, IF AV = 20 A, trr = 30 ns(max.) Fast Recovery and High Power Diode CTXS-4202S Features Package The CTXS-4202S is a fast recovery diode which realize a peak reverse voltage of 200 V, a typical forward voltage drop of 0.90 V and typical trr of 18 ns

XA4202

Contextual Info: VRM = 200 V, IF AV = 20 A, trr = 25 ns(max.) Fast Recovery and High Power Diode CTXA-4202S Features Package The CTXA-4202S is a fast recovery diode which realize a peak reverse voltage of 200 V, a typical forward voltage drop of 0.90 V and typical trr of 18 ns