FMBG16 Search Results

MN638S

Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

FMPG2F

Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179

FMB-26

Abstract: FMB-26L FMB-36 FMB-G16L FME-2106 SFPB-56 SFPB-66 SFPB-76 SFPW-56 SPB-66S
Contextual Info: Schottky Barrier Diodes VF V max IF (A) VR = VRM max Half-cycle Sinewave Single Shot Bridge • External Dimensions 0.62 0.7 1 100 20 0.072 82 –40 to +150 0.7 1.5 1 70 150 (Tj) 20 0.072 95 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 2.0 40 –40 to +150

FMB-36M

Abstract: FMB26L SF-PW
Contextual Info: Schottky Barrier Diodes VF V max IF (A) VR = VRM max Half-cycle Sinewave Single Shot Bridge • External Dimensions 0.62 0.7 1 100 20 0.072 82 –40 to +150 0.7 1.5 1 70 150 (Tj) 20 0.072 95 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 2.0 40 –40 to +150

CTB24L

Abstract: ctb34m
Contextual Info: 5-5. Schottky Barrier Diodes Surface Mount Type Type No. SFPA-51 VRM IF AV IFSM (V) (A) (A) 10 Tj Tstg (°C) 60 Electrical Characteristics VF (V) IR H•IR Condition (mA) (mA) Fig. = IF Ta = 100°C No. max per max per max per element element element 0.34

FMBG16

Abstract: MARKING RK fmbg19l FMB-G24H SFPJ-73
Contextual Info: Schottky Barrier Diodes 4-4 4-4-1 1 Chip VRM IO VF IR V (A) (V) (mA) SFPA-53 0.36 1.5 Surface mount (SFP) 2 SFPB-56 EA 03 0.36 1.5 Axial(E0) 5 AK 06 MI2A3* 0.39 2.0 Surface mount (Compact) 1 0.45 1.0 Surface mount (SFP) MI1A3 0.47 1.0 AK 03 0.55 EK 03 Part No.

RPER11

Abstract: RPER11H SI-8008HFE RPER11H475K5 8050H FMB-G16L RPER1 SI-8050HFE
Contextual Info: 1-1-2 Switching Mode Regulator ICs SI-8000HFE Series Full-Mold, Separate Excitation Step-down Switching Mode Regulator ICs •Features ■Lineup • Compact full-mold package equivalent to TO220 Part Number SI-8008HFE VO (V) Variable (0.8 to 15) • Output current: 5.5 A

Schottky Barrier Diodes

Abstract: ek 1036 FMB29L
Contextual Info: 4-4 Schottky Barrier Diodes VRM V 60 90 IF (AV) (A) Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) Tstg (°C) VF (V) max IF (A) IR (mA) VR=VRM max IR(H) (mA) VR=VRM max Tj (°C) Rth(j-l) Rth(j-c) (°C/W)

FMB-26

Abstract: FMB-26L FMB-36 FMB-G16L FME-2106 SFPB-56 SFPB-66 SFPB-76 SFPW-56 SPB-66S
Contextual Info: Schottky Barrier Diodes VF V max IF (A) VR = VRM max Half-cycle Sinewave Single Shot Bridge • External Dimensions 0.62 0.7 1 100 20 0.072 82 –40 to +150 0.7 1.5 1 70 150 (Tj) 20 0.072 95 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 2.0 40 –40 to +150

66s 66

Abstract: FMB-26 FMB-26L FMB-36 FMB-G16L FME-2106 SFPB-56 SFPB-66 SFPB-76 SFPW-56
Contextual Info: Schottky Barrier Diodes VF V max IF (A) VR = VRM max Half-cycle Sinewave Single Shot Bridge • External Dimensions 0.62 0.7 1 100 20 0.072 82 –40 to +150 0.7 1.5 1 70 150 (Tj) 20 0.072 95 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 2.0 40 –40 to +150

diode 8603

Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

Contextual Info: SI-8050HFE DC-to-DC Step-Down Converter Features and Benefits Description 5.5 A output current supplied in a small, through-hole mount power package High efficiency: 83% at VIN = 15 V, IO = 3.0 A,VO = 5 V Requires only five external components optional soft

sjpa-l3

Contextual Info: 4-4 Schottky Barrier Diodes VRM V 60 90 IF (AV) (A) Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) Tstg (°C) VF (V) max IF (A) IR (mA) VR=VRM max IR(H) (mA) VR=VRM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

B 2306 BARRIER RECTIFIER

Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

Contextual Info: 1-1-3 DC/DC Converter ICs SI-8000HD Series Surface-Mount, Separate Excitation Step-down Switching Mode •Features ■Absolute Maximum Ratings • Surface-mount package TO263-5 Symbol Ratings Unit • Output current: 5.5 A Input Voltage VIN 43 V • High efficiency: 83% (at TYP, Vo = 5 V)

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

Contextual Info: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)

FMBG16

Contextual Info: SI-8008HD DC-to-DC Step-Down Converter Features and Benefits Description ▪ 5.5 A output current supplied in a small, surface mount power package ▪ High efficiency: 83% at VIN = 15 V, IO = 3.0 A,VO = 5 V ▪ Requires only seven external components optional soft

UX-F5B

Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Contextual Info: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

diode RU 3AM

Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)

FMPG2F

Abstract: zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23
Contextual Info: Bulletin No. D01ED0 Oct., 2000 SI LICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in

FMB-G19L

Abstract: EK 110 fmbg19l FMBG24H FMBG14 FMB-29 FMB-29L FMB-G14L FMB-39M FME-230A
Contextual Info: Schottky Barrier Diodes Package Part Number Surface Mount Axial 90 Frame-2Pin Center-tap Center-tap 100 IFSM A I F (AV) (A) Tj (°C) 50Hz IR (mA) IR (H) (mA) Tstg (°C) VF (V) max IF (A) VR = VRM max Half-cycle Sinewave Single Shot VR = VRM max Ta (°C)