G4J Search Results

G4J 6 lead

Contextual Info: G4A THRU G4J GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current -3 .0 Amperes FEATURES Case Style G4 ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Hermetically sealed package

Contextual Info: G4ATHRU G4J GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Amperes_ FEATURES Case Style Q4 ♦ High temperature metallurgical^ bonded construction ♦ Glass passivated cavity-free junction ♦ Hermetically sealed package

Contextual Info: G4A THRU G4J GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Amperes * FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Hermetically sealed package ♦ 3.0 Ampere operation

Contextual Info: G4A THRU G4J GLASS PASSIVATED JUNCTION RECTIFIER Voltage - 50 to 600 Volts Current - 3.0 Amperes FEATURES ♦ High temperature metallurgically bonded constructed rectifiers ♦ Glass passivated cavity-free junction ♦ Hermetically Sealed package ♦ 3.0 Ampere operation

Contextual Info: G4J SINTERED GLASS JUNCTION AVALANCHE RECTIFIER VOLTAGE： ：600V CURRENT: 3.0A FEATURE G-4 Glass passivated Hermetically sealed package Low reverse current MECHANICAL DATA Case: G-4 sintered glass case Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C

Contextual Info: G4A to G4J VISHAY Vishay Semiconductors Standard Sinterglass Diode \ Features • High temperature metallurgically bonded constructed rectifiers • Cavity-free glass passivated junction • Hermetically sealed package • 3.0 ampere operation at Tamb = 75 °C with no thermal runaway

Contextual Info: G4A thru G4J Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Rectifiers 0.180 4.6 0.115 (2.9) DIA. 1.0 (25.4) MIN. • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Hermetically sealed package

Contextual Info: G4A THRU G4J GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Amperes * FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Hermetically sealed package ♦ 3.0 Ampere operation

Contextual Info: G4A THRU G4J GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 3 .0 Amperes FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Hermetically sealed package ♦ 3.0 Ampere operation

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

BYD74G

Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

panasonic timer switch tb 179

Abstract: panasonic SH-D
Contextual Info: P a n a X S e r ie s B ‘ r i n g i n g ‘T o m o r r o w MICROCOMPUTER MN102L35G LSI User Manual Ver. 2.20 March 6, 1998 Panasonic • 0Q167flS 273 ■ t o ‘T o d a y Restrictions and Warnings Regarding the Use of the Technical Data and the Semiconductors Described in This Document

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

Contextual Info: SKKT 162 H4, SKKH 162 H4 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 2 Thyristor / Diode Modules SKKH 162 H4 SKKT 162 H4 Features # $%&' ' & *+%( ',(-./, &0.12)2.1 # -324% 5%(&125 2*-0&'%4 1%'&0 6&*%70&'% $&(4 *-04%(%4 8-2)'* +-( ,2/, (%02&6202'9 :; (%5-/)2<%4= +20% )-> ? @A BAC

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

1n5399 equivalent

Abstract: MP606J gp25d GP15K equivalent ns8kt equivalent GP25M GP25J GL348 G4J equivalent 1N5398 equivalent
Contextual Info: S T A N D A R D R E C T IF IE R S lo{A 0.5 0.8 CASE TYPE DO-213AA DO-204AL MP606 MINI-MELF I Vrrm VOLTS) 50 6L34A MPG06A# 100 GL348 MPG06B# 200 SÌ340 MPG06D# 6L34G MPG06G# GL34J MP606J# 300 400 500 600 700 800 MPG06K# 1000 MPG06M# 1100-1600 SURGE (A) 1Ö.0

byv260

Abstract: W10G MBRB1060 SBLB2030CT SBLB2040CT ug2d 1N8478 KBU8M 514
Contextual Info: NUMERICAL INDEX 1.5KA6.8 thru 1.5KA43A.614 BYM12-50 thru BYM12-400 .77 FES8AT thru FES8JT . 149 1.5KE6.8 thru 1.5KE440CA.564 BYM13-20 thru BYM13-60 .355 BYV260 and BYV26E. 75

5SBA20

Abstract: ZENER b29 B2950 BRF20100C BZY97C11 BRF20100CT BC337 B2060CT BRF1060 General Semiconductor 1N4249
Contextual Info: ALPHANUMERICAL LIST OF ALL GENERAL SEMICONDUCTOR TYPES Note: Listed below are General Sem iconductor's part num bers, along with the Data Book in w hich they appear. For Zener and T V S page references, see the Zener/TVS Device Index on page 5 in th is book.

g1758

Abstract: BYV27-200 byw32-200 G30D GP25M
Contextual Info: v G eneral S e m ic o n d u c t o r DEVICE NUMERICAL INDEX PAGE DEVICE PAGE DEVICE PAGE 1.5KA6.8 thru 1.5KA43, A . 52 BA157GP thru B A 1 5 9 G P . 18 EGL34A thru EGL34G . 28 1.5KE6.8 thru 1.5KE440, A, CA . 53

eto thyristor

Abstract: ERICSSON rax card substitu bipolar transistors diode sg 5 ts
Contextual Info: ERICSSON ^ May 1997 PBL 3766, PBL 3766/6 Subscriber Line Interface Circuit Description Key Features The PBL 3766 Subscriber Line Interface Circuit SLIC is a monolithic integrated circuit, manufactured in 75 V bipolar technology. The PBL 3766 SLIC facilitates the

UPG2214TB-E4-A NEC

Abstract: UPG2214TB-E4-A UPG2214TB-A HS350 UPG2214TB VP215
Contextual Info: NEC's ½W LOW VOLTAGE UPG2214TB L, S-BAND SPDT SWITCH FEATURES DESCRIPTION • SWITCH CONTROL VOLTAGE: Vcont H = 1.8 to 5.3 V (3.0 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP.) NEC's UPG2214TB is a GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch for mobile phones and other

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

Contextual Info: G4A / B / D / G / J VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • High temperature metallurgically bonded constructed rectifiers • Cavity-free glass passivated junction • Hermetically sealed package • 3.0 ampere operation at Tamb = 75 °C with no thermal runaway

Contextual Info: CMOS CSI 0.5 micron Process OPERATING LIFE @ TA = +125C AT RATED VOLTAGE 7/14/2010 Device MIC2003 1.2YM5 MIC2004 0.8YM5 MIC2005A 1YM6 MIC2005A 2YM6 MIC2005A 1YM6 MIC2005A 2YM6 MIC2005M 0.8YM5 MIC2005M 0.5YM6 MIC2005 0.5BM6 MIC2006 1.2BM6 MIC2007 YM6 MIC2007 YM6