G2U TR Search Results

WF2M32-XXX5

Contextual Info: WF2M32-XXX5 HI-RELIABILITY PRODUCT 2Mx32 5V FLASH MODULE, SMD 5962-97531 pending PRELIMINARY* FEATURES • Access Time of 90, 120, 150ns ■ Packaging: • 66 pin, PGA Type, 1.185" square, Hermetic Ceramic HIP (Package 401). • 68 lead, Hermetic CQFP (G2U), 22.4mm (0.880") square

Contextual Info: White Electronic Designs WS128K32-XXX 128Kx32 SRAM MODULE, SMD 5962-93187 & 5962-95595 FEATURES Access Times of 15, 17, 20, 25, 35, 45, 55ns Low Power CMOS MIL-STD-883 Compliant Devices Available TTL Compatible Inputs and Outputs Packaging Built in Decoupling Caps and Multiple Ground Pins

Contextual Info: WS128K32-XXX 128Kx32 SRAM MODULE, SMD 5962-93187 FEATURES  Access Times of 70, 85, 100, 120ns  Low Power CMOS  MIL-STD-883 Compliant Devices Available  TTL Compatible Inputs and Outputs  Packaging  Built in Decoupling Caps and Multiple Ground Pins for Low

WF2M32-XXX5

Contextual Info: WF2M32-XXX5 2Mx32 5V NOR FLASH MODULE FEATURES  Access Time of 90, 120, 150ns  5 Volt Read and Write  Packaging:  Low Power CMOS  Data# Polling and Toggle Bit feature for detection of program or erase cycle completion. • 66 pin, PGA Type, 1.185" square, Hermetic Ceramic HIP

Contextual Info: WF128K32-XXX5 128KX32 5V NOR FLASH MODULE SMD 5962-94716* FEATURES  Access times of 50*, 60, 70, 90, 120, 150ns  Low power CMOS  Packaging:  Embedded erase and program algorithms  TTL compatible inputs and CMOS outputs • 66 pin, PGA type, 1.075 inch square, Hermetic Ceramic

Contextual Info: WF128K32-XXX5 128KX 32 5V FL ASH MODULE, SMD 5962-94716 FEATURES n Access Times of 50*, 60, 70, 90, 120, 150ns n 5 Volt Programming. 5V ± 10% Supply n Packaging: n Low Power CMOS, 1mA Standby Typical •66 pin, PGA Type, 1.075 inch square, Hermetic Ceramic HIP Package 400

smd g2U

Abstract: WF512K32N-XH1X5 WF512K32-XG1UX5 WF512K32-XG2UX5 WF512K32-XG4TX5 WF512K32-XXX5
Contextual Info: WF512K32-XXX5 HI-RELIABILITY PRODUCT 512Kx32 5V FLASH MODULE, SMD 5962-94612 FEATURES • Access Times of 60, 70, 90, 120, 150ns ■ Organized as 512Kx32 ■ Packaging ■ Commercial, Industrial and Military Temperature Ranges • 66 pin, PGA Type, 1.075" square, Hermetic

Contextual Info: WF2M32-XXX5 2Mx32 5V NOR FLASH MODULE FEATURES  Access Time of 90, 120, 150ns  5 Volt Read and Write  Packaging:  Low Power CMOS  Data# Polling and Toggle Bit feature for detection of program or erase cycle completion. • 66 pin, PGA Type, 1.185" square, Hermetic Ceramic HIP

Contextual Info: WS512K32-XXX 512Kx32 SRAM MODULE, SMD 5962-94611 FEATURES  Access Times of 15, 17, 20, 25, 35, 45, 55ns  TTL Compatible Inputs and Outputs  Packaging  5 Volt Power Supply  Low Power CMOS • 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP

a014 SMD

Abstract: WE32K32-XXX
Contextual Info: WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES • Access Times of 90, 120, 150ns ■ Commercial, Industrial and Military Temperature Ranges ■ MIL-STD-883 Compliant Devices Available ■ Automatic Page Write Operation ■ Packaging: ■ Page Write Cycle Time: 10ms Max

Contextual Info: WF1M32B-XXX3 1Mx32 3.3V NOR FLASH MODULE FEATURES  Access Times of 100, 120, 150ns  Low Power CMOS  Packaging  Embedded Erase and Program Algorithms  Built-in Decoupling Caps for Low Noise Operation • 66 pin, PGA Type H , 1.185" square, Hermetic Ceramic

Contextual Info: a WF128K32-XXX5 WHITE /MICROELECTRONICS 128Kx32 5V FLASH M ODULE, SM D 5962-94716 FEATURES • A ccess Tim es of 60, 70, 9 0 , 1 2 0 , 150ns ■ C om m ercial, Ind ustria l and M ilita r y T e m pe ratu re Fianges ■ Packaging: ■ 5 V olt Program m ing. 5V + 10% S upply

Contextual Info: PRELIMINARY DATA SHEET L,S BAND HIGH POWER SPDT GaAs MMIC SWITCH UPG2009TB OUTLINE DIMENSIONS Units in mm FEATURES • HIGH POWER: PIN (0.1 dB) = +34 dBm TYP PACKAGE OUTLINE S06 • LOW INSERTION LOSS: LINS = 0.25 dB TYP at f = 1 GHz LINS = 0.40 dB TYP at f = 2.5 GHz

PG2009TB

Abstract: spdt mark s22
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The μPG2009TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion

G2U TR

Abstract: MIL-STD-883-M5004 Marl
Contextual Info: FTS128K32-XXX 128Kx32 SRAM MODULE Features Access Times of 15, 17, 20, 25, 35, 45, 55ns Low Power CMOS MIL-STD-883 M5004 Available TTL Compatible Inputs and Outputs Packaging Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation • 66 pin, PGA Type H1 , 1.075" square, Hermetic

IG2U

Abstract: IG2D
Contextual Info: 19-3378; Rev 0; 8/04 FireWire Current Limiter and Low-Drop ORing Switch Controller Applications FireWire Desktop/Notebook Port FireWire Peripheral Device Current Limit FireWire Hub Features ♦ Provides Safe Hot Swap for 7.5V to 37V Power Supplies ♦ Low-Drop Power ORing with Ultra-Fast Turn-Off

IG2U

Abstract: FireWire hub
Contextual Info: 19-3378; Rev 1; 1/05 FireWire Current Limiter and Low-Drop ORing Switch Controller Features The MAX5943 is a fully integrated power-management IC for FireWire applications. This device controls two external power n-channel MOSFETs to regulate current from the input power supply to the load and performs