G1D Search Results

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TOSHIBA TIM0910-10 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 6.0 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: MICROWAVE POWER GaAs FET TIM3742-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 3.7GHz to 4.2GHz „ HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

TIM1213

Contextual Info: MICROWAVE POWER GaAs FET TIM1213-10L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 29.0dBm n HIGH POWER P1dB=40.5dBm at 12.7GHz to 13.2GHz n HIGH GAIN G1dB=6.0 dB at 12.7 GHz to 13.2GHz n BROAD BAND INTERNALLY MATCHED FET

Contextual Info: MICROWAVE POWER GaAs FET TIM5359-16SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level „ HIGH POWER P1dB=42.5dBm at 5.3GHz to 5.9GHz „ HIGH GAIN G1dB=8.5dB at 5.3GHz to 5.9GHz

Contextual Info: MICROWAVE POWER GaAs FET TIM1314-9L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 13.75GHz to 14.5GHz n LOW INTERMODULATION DISTORTION

Contextual Info: MICROWAVE POWER GaAs FET TIM3742-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level „ HIGH POWER P1dB=39.5dBm at 3.7GHz to 4.2GHz „ HIGH GAIN G1dB=10.0dB at 3.7GHz to 4.2GHz

Contextual Info: MICROWAVE POWER GaAs FET TIM8596-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=33.5dBm at 8.5GHz to 9.6GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 8.5GHz to 9.6GHz RF PERFORMANCE SPECIFICATIONS Ta= 25°C

tim8996-30

Abstract: 7-AA03A
Contextual Info: MICROWAVE POWER GaAs FET TIM8996-30 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=45.0dBm at 8.9GHz to 9.6GHz „ HIGH GAIN G1dB=7.0dB at 8.9GHz to 9.6GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

TIM7785-60ULA

Contextual Info: MICROWAVE POWER GaAs FET TIM7785-60ULA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3= -30 dBc at Pout= 41.0dBm Single Carrier Level „ HIGH POWER P1dB=48.0dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB=7.5dB at 7.7GHz to 8.5GHz

Contextual Info: MICROWAVE POWER GaAs FET TIM4450-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level „ HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz

TIM7179-4UL

Contextual Info: MICROWAVE POWER GaAs FET TIM7179-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level „ HIGH POWER P1dB=36.5dBm at 7.1GHz to 7.9GHz „ HIGH GAIN G1dB=7.5dB at 7.1GHz to 7.9GHz

Contextual Info: MICROWAVE POWER GaAs FET TIM5359-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 5.3GHz to 5.9GHz „ HIGH GAIN G1dB=10.5dB at 5.3GHz to 5.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

Contextual Info: MICROWAVE POWER GaAs FET TIM5964-30UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=45.0 dBm at 5.9GHz to 6.4GHz „ HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level „ HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=8.0dB at 6.4GHz to 7.2GHz

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-30UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=45.0 dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

PIN275

Contextual Info: MICROWAVE POWER GaAs FET TIM5964-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level „ HIGH POWER P1dB=36.5dBm at 5.9GHz to 6.4GHz „ HIGH GAIN G1dB=9.0dB at 5.9GHz to 6.4GHz

Contextual Info: MICROWAVE POWER GaAs FET TIM1011-8UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 27.0dBm Single Carrier Level „ HIGH POWER P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz „ HIGH GAIN G1dB=9.0 dB at 10.7 GHz to 11.7 GHz

Contextual Info: MICROWAVE POWER GaAs FET TIM5964-12UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=41.5dBm at 5.9GHz to 6.4GHz n HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

Contextual Info: MICROWAVE POWER GaAs FET TIM7785-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level „ HIGH POWER P1dB=36.5dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB=6.5dB at 7.7GHz to 8.5GHz

Contextual Info: MICROWAVE POWER GaAs FET TIM4450-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level „ HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz

EFA240B-100F

Contextual Info: Excelics EFA240B-100F DATA SHEET Low Distortion GaAs Power FET '  7<3   7<3  All Dimensions In mils ELECTRICAL CHARACTERISTICS Ta = 25 OC SYMBOLS P1dB G1dB PAE PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression

High Power GaAs FET

Abstract: Fujitsu GaAs FET application note C-111A EIAJ ED-4701 111A RM1101 fujitsu gaas fet ED-4701 FLC317MG-4 High voltage GaAs FET FLC31
Contextual Info: FLC317MG-4 High Voltage - High Power GaAs FET FEATURES ・High Output Power: P1dB=34.8dBm Typ. ・High Gain: G1dB=9.5dB(Typ.) ・High PAE: ηadd=37%(Typ.) ・Proven Reliability ・Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for

Transistor p1f

Abstract: MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS FPD4000AS
Contextual Info: FPD4000AS 2.5W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 34.5 dBm Output Power (P1dB) ♦ 12 dB Power Gain (G1dB) ♦ 45 dBm Output IP3 ♦ 8V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website