G11N Search Results

M-85513

Abstract: M83513 microdot 22759 MIL-G45204
Contextual Info: Part Details for P/N: M83513/04-G11N • Products | Catalog | Brands | Industries | Commerce | Supplier | Contact Us | About | Home Home Subminiature and Microminiature D Connectors Microminiature D Connectors Part Number Search Document Search M83513/04-G11N

a5 TRANSISTOR

Abstract: transistor T2S MARKING CODE ARF A5A marking transistor A5 MG11A marking code ER transistor
Contextual Info: UM A5 N / FM A5A Transistors U M G 11N / F M G 11A I Digital Transistor Dual Digital Transistors for Inverter Driver UMA5N / FMA5A I Absolute maximum ratings (Ta=25'C) •Features 1 ) Tw o D T A 123J transistors are housed in a U M T o r S M T package. Parameter

11n120

Abstract: g11n120 G11N120CN SC-15 11N120C TA49291 11n120* data sheet HGTP11N120CN HGT1S11N120CNS HGT1S11N120CNS9A
Contextual Info: G11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT Features The G11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best

11n120

Abstract: G11N120CN g11n120 11n120cn HGT1S11N120CNS HGT1S11N120CNS9A HGTG11N120CN HGTP11N120CN TA49291 TB334
Contextual Info: G11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet January 2000 43A, 1200V, NPT Series N-Channel IGBT Features The G11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best

Contextual Info: G11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT Features The G11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best

tc 144e

Abstract: 144EK
Contextual Info: Part Marking □Marks are filled with hR ranks EM3 #h n Ranking Inc Ication C ode hFE R anking C ode h R R anking P a rt M a rkin g P a rt No. P ackage P art M arking 1C D P art No. 2SC4082 AD 2SC4818 ACD 2SC 4725 1D D 2SC4063 ADD 2SC 4726 1ED 2S C 4 0 S 4

G11N120CN

Contextual Info: G11N120CN, HGTP11N120CN, HGT1S11N120CNS S em iconductor A p rii 1999 D ata S h eet 43A, 1200V, NPT Series N-Channel IGBT 43A, 1200V, T C = 25°C The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor

GR-253

Abstract: T7690 TMPR28051 co-toc BIP 109 S3685 DS15LB
Contextual Info: Data Sheet March 1997 mi c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations TMPR28051 S TS-1/A U -3 M apper Features • Configurable TU-12 slot selection for E1 drop Overall Device: ■ Detects AU-3 loss of H4 multiframe, AIS-P, and

INS26

Contextual Info: m i c r o e l e c t r o n i c s gr oup Data Sheet August 1999 Lucent Technologies Bell Labs Innovations TMPR28051 STS-1/AU-3 STM-0 Mapper Features • Maps signals in one of the following ways: — Maps up to 28 asynchronous DS1 signals to SONET STS-1 via VT Groups, or SDH AU-3 via

G11N120CN

Abstract: 11N120CN 11n120 11n120* data sheet HGT1S11N120CNS HGT1S11N120CNS9A HGTG11N120CN HGTP11N120CN TA49291 TB334
Contextual Info: G11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet January 2000 43A, 1200V, NPT Series N-Channel IGBT Features The G11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

G11N120CN

Abstract: g11n120 11n120
Contextual Info: G11N120CN, HGTP11N120CN, HGT1S11N120CNS Semiconductor A p rii 1999 D a ta S h e e t 43A, 1200V, NPT Series N-Channel IGBT Features The H G11N120CN, H G TP11N120CN, and HGT1S11N120CNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

Contextual Info: microelectronics Data Sheet August 1999 group Lucent Technologies Bell Labs Innovations TMPR28051 STS-1/AU-3 STM-0 Mapper Features • Maps signals in one of the following ways: — Maps up to 28 asynchronous DS1 signals to SONET STS-1 via VT Groups, or SDH AU-3 via

HGTG11N120CN

Abstract: g11n120cn 11n120 11N120CN TA49291 g11n120 HGT1S11N120CNS HGT1S11N120CNS9A HGTP11N120CN TB334
Contextual Info: G11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT Features The G11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best