G0227 Search Results

M1570

Abstract: M1568 T032-1 BYW93 BYW93-50 BYW93-50U M1569 BVW93
Contextual Info: N AMER PHILIPS/ DISCRET E MAINTENANCE TYPE 2SE D • [=^53^31 G0227Ô3 3 ■ BYW93 SERIES T - 0 3 - 21 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery

Contextual Info: Data Sheet August 1996 mi c r o e l e c t r o n i c s gr oup Lucent Technologies Bell Labs Innovations • Four 10 Mbits/s Ethernet transceivers and MACs integrated together with separate transmit and receive port FIFOs and a single DMA interface simplity the design of a frame-switching hub. Each

EL50P1

Abstract: ES1000C ES300C Hall Effect Current Sensors ABB ES2000C MP25P1 VD1500-48 1SBT172000R9944 EL55P2 EL25P1
Contextual Info: Technical catalogue Current sensors Voltage sensors Current sensors Voltage sensors Contents Technologies Current measuring technology . 4 Voltage measuring technology . 8

Contextual Info: MITSUBISHI ICs VCR M52357SP/VP FM EQUALIZER DESCRIPTION The M 5 2 3 5 7 has an FM signal e q ualizer fo r p la y b a c k , PIN CONFIGURATION (TOP VIEW) low -p ass and high-pass filte r fo r recording, and recording level adjuster. FEATURES Playback s y s te m

SYW 55

Abstract: BYW25 BYW25-1000 BYW25-1000R BYW25-800 BYW25-800R LF35
Contextual Info: N AMER PHILIPS/DISCRETE MAINTENANCE TYPE SSE D • bbS3*J31 0055733 T ■ B Y W ü b C s th u tio r-os-/9 F A S T S O F T - R E C O V E R Y R E C T IF IE R D IO D E S Fast soft-recovery diodes in DO-5 metal envelopes especially suitable fo r operation as main and

Contextual Info: Preliminary KMM466F404AS-L DRAM MODULE KMM466F404AS-L EDO Mode without buffer 4Mx64 based on 4Mx16, 4K Refresh, 3.3V, Low power/Self-Refresh G ENERAL DESCRIPTIO N FEATURES The Samsung KMM466F404AS-L is a 4M bit x 64 Dynamic RAM high density memory module. The

Contextual Info: MITSUBISHI ICS VCR M52087SP/FP FM INTERFACE DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M 52087 processes VCR FM luminance signals. This circuit consists o f an inversion suppressing circuit, SW1 IN SW1 OUT PB Vcc MAIN FM IN GCA2 ADJ BPF IN GND SW2 OUT

BYW29

Abstract: LC1 Clip M2749
Contextual Info: N AMER PHILIPS/DISCRETE 25E ß • bb53T31 □ 02273*1 Q ■ B Y W 2 9 SERIES ^ 7 -0 3 -/7 ULTRA FAST RECO VER Y RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times w ith very low stored charge and soft-recovery

Contextual Info: CHAPTER 3 FUNCTIONS This chapter describes the functions of SPC internal registers, memory, and buffers. 3.1 INTERNAL REGISTERS 3.2 BASIC CONTROL REGISTER 3.3 INITIAL SETTING REGISTER WINDOW 3.4 MCS BUFFER WINDOW 3.5 USER PROGRAM MEMORY WINDOW 3.6 SCAM REGISTER WINDOW

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM8596-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - PldB = 33.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G idB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: 32K x 32, 3.3V SYNCHRONOUS SRAM WITH 3.3V/2.5V PIPELINED OUTPUTS AND INTERLEAVED/LINEAR BURST COUNTER Integrated D evice Technology, Inc. FEATURES: PRELIMINARY IDT71V532 The 1DT71V532 SRAM contains write, data, address, and control registers. Internal logic allows the SRAM to generate

M3155

Abstract: M3160 pp m3155 g0s2710 m3166 BYV133F BYV133F-35 T-03-19
Contextual Info: DEVELOPMENT DATA BYV133F SERIES T h is data shee t con ta in s advance in fo rm a tio n and s p e cifica tio n s are su b je ct to c h an ge w ith o u t notice. N AMER PHILIPS/DISCRETE 25E D • ^53^31 0 0 2570“! 2 ■ . SCHOTTKY-BARRIER ELECTRICALLY-ISOLATED T - Ô 3 - 1 9

BYW29F

Contextual Info: 25E D N AMER PH ILIPS/DISCRETE • ^53131 002274*1 3 ■ X ' BYW29F SERIES 7 3 0 3 - /7 ULTRA FAST RECOVERY, ELECTRICALLY-ISOLATED RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in S O T -186 full-pack envelopes, featuring

pic with ir sensor

Abstract: HOA1886-012 infrared sensor with pic
Contextual Info: HOA1886 Transmissive Sensor FEATURES • Choice of phototransistor or photodarlington output • Ambient light and dust protective filter • 0.200 in. 5.08 mm slot width INFHA-76.TIF DESCRIPTION The HOA1886 series consists of an infrared emitting diode facing an NPN silicon phototransistor

Contextual Info: DRAM MODULE KMM364C213BK/BS KMM364C213BK/BS Fast Page Mode 2Mx64 DRAM DIMM based on 2Mx8, 2K Refresh, 5V FEATURES GENERAL DESCRIPTION The Sam sung KM M 364C213B is a 2M bit x 64 • Part Identification D ynam ic RAM high density m em ory module. The - KMM364C213BK 2048 cycles/32ms Ref, 30 0m il SOJ

Contextual Info: C XA3171N SONY 4ch. Read/W rite Am plifier for three terminal MIG Head of Hard Disk Drive Description The CXA3171N is a Read/Write Amplifier for the special three terminal MIG head of hard disk drive and designed to handle up to 4 channel heads. Features • Operate on single +5 V power supply

MC807

Abstract: BYV133 BYV133-35 Li53c MC-807 TP 505 diode
Contextual Info: N AMER P H I L I P S / D I S C R E T E 55E D • bbS3T31 DOSShTi 3 ■ BYV133 SERIES T ~ O Z -i° SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage, platinum -barrier rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance and absence o f stored charge. They are intended fo r use in switched-mode power