G02273 Search Results

SYW 55

Abstract: BYW25 BYW25-1000 BYW25-1000R BYW25-800 BYW25-800R LF35
Contextual Info: N AMER PHILIPS/DISCRETE MAINTENANCE TYPE SSE D • bbS3*J31 0055733 T ■ B Y W ü b C s th u tio r-os-/9 F A S T S O F T - R E C O V E R Y R E C T IF IE R D IO D E S Fast soft-recovery diodes in DO-5 metal envelopes especially suitable fo r operation as main and

Contextual Info: Preliminary KMM466F404AS-L DRAM MODULE KMM466F404AS-L EDO Mode without buffer 4Mx64 based on 4Mx16, 4K Refresh, 3.3V, Low power/Self-Refresh G ENERAL DESCRIPTIO N FEATURES The Samsung KMM466F404AS-L is a 4M bit x 64 Dynamic RAM high density memory module. The

Contextual Info: MITSUBISHI ICS VCR M52087SP/FP FM INTERFACE DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M 52087 processes VCR FM luminance signals. This circuit consists o f an inversion suppressing circuit, SW1 IN SW1 OUT PB Vcc MAIN FM IN GCA2 ADJ BPF IN GND SW2 OUT

Contextual Info: 32K x 32, 3.3V SYNCHRONOUS SRAM WITH 3.3V/2.5V PIPELINED OUTPUTS AND INTERLEAVED/LINEAR BURST COUNTER Integrated D evice Technology, Inc. FEATURES: PRELIMINARY IDT71V532 The 1DT71V532 SRAM contains write, data, address, and control registers. Internal logic allows the SRAM to generate