G0030 Search Results

RETICON

Abstract: RETICON CCD RETICON photodiode array 512 Reticon photodiode array 1024 pixel RL1288DAQ-011 Reticon 256 reticon photodiode array RC07 RL1282D RL1288D
Contextual Info: E G & G RETICON 1ÔE D • 3030735 0003050 4 ■ RL1282D, RL1284D, RL1288D D Series Tapped RETICON High Speed Charge-Coupled Photodiode Array EG&G Reticon's RL1282D, RL1284D and RL1288D are ultrahigh-speed, self-scanned charge-coupled linear arrays with video output taps every 128 diodes. The RL1282D has two

Contextual Info: QIXYS Fast Recovery Epitaxial Diode FRED DSEI60 IFAVM vrRRM t v RSM V rrm V h 4V\iVs Type V 1200 1200 DSEI60-12A Symbol Test Conditions ^FRMS TVJ = Maximum Ratings 100 52 800 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 500 540 A A TVJ = 150°C; t = 10 ms (50 Hz), sine

Contextual Info: SONY CORP/COMPONENT PRODS 4=iE 0302303 D S I SONY CXD7500M SONY. Voltage Control Type Variable Resistor Description CXD7500M is a resistive gate type MOS FET featuring linear current vs voltage characteristics over a wide range of drain voltage low distortion and

MCL1

Abstract: LB-201
Contextual Info: HITACHI AMERICA/ ELECTRON IbE D • 44Tfc.201 DDQBñbH 7 LM254XP T -4 1 -3 8 Notes 1. Applied to C L 1 , C L 2 , DO ~ D3, M and FLM . 2 . V DD = +5V, V DD - V 0 = 2 1 .7 V , FEATURES ■ 64 0 W dot x 200(H) dot graphic and alphanumeric display ■ Attachable controller L S I : HD63645F/HD64645F/HD66840

Contextual Info: FUJITSU fllCROELECTRONICS 7fl 3749762 FUJITSU MICROELECTRONICS DEi| FU JITSU MOS M em o rie s M B 8 52 01 -12 , M B 8 52 01 -15 1,048,576 X 1-Bit Dynamic Random Access Memory SIP Module Description The Fujitsu MB85201 is a fully decoded, 1,048,576 word x 1-bit

Contextual Info: April 1994 PRELIMINARY Micro Linear ML4876 LCD Backlight Lamp Driver with GENERAL DESCRIPTION including the magnetics, can be easily implemented with standard off the shelf power components. The ML4876 is an ideal solution for driving small cold cathode fluorescent tubes CCFL used in liquid crystal

sangamo capacitor type 500

Abstract: sangamo capacitor SANGAMO MICA silver mica sangamo sangamo SANGAMO CAPACITOR DIVISION cdm mica capacitor sangamo 440 capacitor sangamo dubilier capacitor KVX
Contextual Info: CORNELL DUBILIER bfiE D 244fläb0 0 0 0 3 0 1 0 ääT % KVXHigh-Voltage and Pulse Capacitors Ignite Your World Voltage, Current and Temperature to New Heights KaBOOM! Another exploding foil initiator successfully detonates a military smart bomb thanks to a KVXcapacitor. Jet engines roar

pulse stretcher circuit diagram

Abstract: CS-2516N8 170-PA
Contextual Info: Pulse-load Battery Monitor Features Description T he C S-2516 is designed for use in bat­ tery pow ered m edical, security, or environm ental system s w h ere prior n otification o f im pen d ing pow er source failure is a requirem ent T he IC effectively provides continuous m on i­

Contextual Info: DS 1 DSA 1 Rectifier Diode Avalanche Diodes vR RM = 1200 -1800 v RRM =7 a F RMS I*F(AV)M -“ 2 °3 nA v RSM V(BR)min VRRM V V V 1300 1700 1900 1300 1750 1950 1200 1600 1800 Standard Avalanche Type Types DS1-12D DSA 1-12D DSA1-16D DSA1-18D A ® Only for Avalanche Diodes

RETICON ccd

Abstract: RETICON
Contextual Info: E G & G RETICON 1ÔE D • 3030735 0003050 4 ■ RL1282D, RL1284D, RL1288D D Series Tapped RETICON High Speed Charge-Coupled Photodiode Array EG&G Reticon's RL1282D, RL1284D and RL1288D are ultrahigh-speed, self-scanned charge-coupled linear arrays with video output taps every 128 diodes. The RL1282D has two

GS-3 resistor

Abstract: sony CXD 5k variable resistance T-62-05 CXD7500M CXD750OM G0030
Contextual Info: SONY CORP/COMPONENT PRODS 4=iE 0302303 D S I SONY CXD7500M SONY. Voltage Control Type Variable Resistor Description CXD7500M is a resistive gate type MOS FET featuring linear current vs voltage characteristics over a wide range of drain voltage low distortion and

3D27

Abstract: DI-22 SPT5216 SPT5216B SPT5216C
Contextual Info: @SPT SPTS2 I6 16-BIT ULTRAHIGH SPEED DAC SIGNAL PROCESSING TECHNOLOGIES ADVANCED INFORMATION APPLICATIONS FEATURES • • • • • Fast Settling Time -1 5 0 nsec . Excellent Linearity T. C. 1.5 ppm/°C On-Chip Band-Gap Voltage Reference On-Chip Application Resistors for Gain Selection

IS211

Abstract: LS11 LS12 LS21 S111 S211 TQ9203 J FET RF Cascode Input A10B
Contextual Info: T H I Q U I N S E M I C O N D U C T O R T 7 0 » WIRELESS I N C C OMMUNI CATIONS TQ9203 Low-Current Celiuiar-Band Downconverter 1C T h e T Q 9 2 0 3 R F I C D o w n c o n v e rte r is a m u ltifu n c tio n R F fro n t en d d e sig n e d fo r the h ig h d y n a m ic range ce llu lar c o m m u n ic a tio n s sta n d a rd s . T h e d e s ig n o f th e T Q 9 2 0 3

PS 9829 m

Abstract: Q559 int 6400 PS 9829 B
Contextual Info: GO UL D S E M I C O N D U C T O R 4055916 GÖULD SEMICONDUCTOR D I V % pe. |. n »IV QBE D | MDSS^lt, D G l G a a D 0 J ~ 03E 10220 D Intelligent Slave Physical Interface Controller IPI-3 Electronics 7 ^ 5 5 '3 3 - /S' P r e lim in a r y D a ta S h e e t