G-120 C MOSFET Search Results

Contextual Info: A dvanced P ow er T e c h n o lo g y ^ ^ ARF449A 150V 150W RF POWER MOSFETs N -C H A NN EL ENHANCEMENT MODE 120MHz The ARF449A and ARF449B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.

DS16A

Contextual Info: Æ lltro n PRODUCT D EV I C ES , I NC . 200V. ABSOLUTE MAXIMUM RATINGS PARAMETER U N IT S SYMBOL DRAIN-SOURCE VOLTAGE VDSS 200 Vdc DRAIN-GATE VOLTAGE R g g - 1 . OMn VDGR 200 Vdc VGS ±20 Vdc ID 120 Ade DRAIN CURRENT PULSED 1DM 480 A TOTAL POWER D IS S IP A TIO N

34984

Abstract: Si9105
Contextual Info: T em ic SÌ9105 Siliconix 1-W High-Voltage Switchmode Regulator Features • C C IT T C o m p a tib le • C u rren t-M o d e C o n tro l • L ow P ow er C o n su m p tio n less th a n 5 raW • • • • • 10- t o 120-V In p u t R an g e 200-V, 2 5 0 -m A M G S F E T

240 L025

Contextual Info: AdvancedTechnical Information HiPerFET Power MOSFETs ISOPLUS247™ IXFR 30N50 D25 Electrically Isolated Back Surface Test Conditions v D SS ^ DGR Tj v Vos v t G SM ^D2 5 >OM 'ar 500 500 V V Continuous Transient 120 ¿30 V V Tc = 2 5°C Tc = 25° C, pulse width limited by TJM

"MOSFET Module"

Abstract: QJS0512001 N mosfet 400v 500A 500a mosfet MOSFET 20V 120A STY60NM50
Contextual Info: QJS0512001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com A F Single MOSFET Module 120 Amperes/500 Volts T (DEEP) D 6 7 N (3 TYP.) R 3 2 G H 5 1 M (2 TYP.) 4 E B K (3 TYP.) H S Q 0.11 x 0.03TAB C Description: Powerex Single MOSFET Module

VJ7079

Abstract: VJ7119
Contextual Info: PRODUCT SHEET V I S H A Y I N T E R T E C H N O L O G Y, I N C . CAPACITORS Model RuGGed Chip VJ Series RuGGed Chip Capacitors New RuGGed Capacitors for Power Supply Applications FEATURES • Rugged, surface-mountable, multilayer ceramic capacitors • At 120 Hz, ESR of 100 V rated RuGGed Chip is typicaly less than a quarter

Si9979

Abstract: brake mosfet switch BLDC Motor intemallow SI9979CS SQFP-48
Contextual Info: T e m ic SÌ9979CS_ « x 3-Phase Brushless DC Motor Controller Features • H all-E ffect C o m m u ta tio n • 6 0 ° o r 120° S en so r Spacing • In te g ral H igh-S ide D riv e f o r all N -C h an n el M O S F E T B ridges

Contextual Info: Order this document by MC33362/D M O TO R O LA High V oltage Sw itching Regulator T he M C 3 33 62 is a m on olithic high vo lta g e sw itch ing re g ulator th a t is spe cifica lly desig ned to o p era te from a rectified 120 VAC line source. This integrated circu it fe a tu re s an o n -c h ip 500 V /2.0 A S e n se F E T po w e r sw itch,

n22K

Abstract: t3.15a 250v L5991A 07l v3 L5991 BCD60II
Contextual Info: L5991 L5991A PRIMARY CONTROLLER WITH STANDBY • ■ ■ ■ ■ ■ ■ ■ . ■ ■ ■ ■ . . C U R R E N T -M O D E C O N TR O L PW M SW ITC H IN G F R E Q U E N C Y UP TO 1 M Hz LOW STA R T-U P C U R R E N T < 120|xA H IG H -C U R R EN T O U TP U T D R IVE SUITABLE

Project Report of fire alarm using IC 555 doc

Abstract: Project Report of fire alarm using IC 555 toshiba laptop battery pack pinout hp laptop battery pack pinout Project Report for fire alarm using IC 555 doc Project Report of fire alarm using IC timer ne 555 TMS320C5409 automatic heat detector project report smoke alarm using IC NE 555 hp laptop battery pinout
Contextual Info: T H E W O R L D L E A D E R I N D S P inside A N A L O G A N D FEBRUARY 2001 VOLUME 7 TM point DSPs E R 160 MHz CONSUM P 50% ON DSP DSPTMS320C5410A MHz TI Analog Applications Journal 60% 120 POW Nov. update Improved fixed- N E Back cover R RMA FO C Strategic

IRF150CF

Abstract: GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTF152 YTFP150 2SK747
Contextual Info: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Max (V) Clsa Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 BUZ349 BUZ349 SFN152 YTFP152

Contextual Info: Advance Technical Information PolarTM High Speed IXGK 210N30PCT1 IGBT + PolarTM MOSFET VCES = 300 V = 210 A IC25 VCE sat ≤ 1.6 V C in Parallel For PDP Applications G E Maximum Ratings Symbol Test Conditions VCES TJ = 25°C to 150°C 300 V VGES Continuous

Contextual Info: Advance Technical Information PolarTM High Speed IXGK 210N30PBT1 IGBT + PolarTM MOSFET in Parallel VCES = 300 V = 210 A IC25 VCE sat ≤ 1.6 V C For PDP Applications G E Maximum Ratings Symbol Test Conditions VCES TJ = 25°C to 150°C 300 V VGES Continuous

015N04L

Abstract: IPB015N04L IPB015N04L G JESD22
Contextual Info: Type IPB015N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level

2N15

Abstract: RFL1N12 RFL1N15 RFP2N12 RFP2N15 RFP-zn rfp1n12
Contextual Info: G E SOLID STATE ' DE I3Û7SGA1 GDlfllOl M T □! 0! § SOLID STATE Standard Power MOSFETs " 01E .18101 d T ' 3 ? “0 9 RFL1N12, RFL1N15, RFP2N12, RFP2N15 File Number 1444 N-Channel Enhancement-Mode

F10N12L

Abstract: F10N15L 10N15L F10N12 RFP10N15L F10N15 RFP10N12L 10n15 RFM10N12L RFM10N15L
Contextual Info: Logic-Level Power MOSFETs_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L File N u m be r 1559 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINAL DIAGRAM 10 A, 120 V — 150 V rDsioni: 0.3 f)

3821J

Contextual Info: Tem ic VN1206L/M, VN1210M Se m i c f l n d u c K i r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V ) r DS(on) VN1206M Vcs(ih)(V) I d (A ) 0.8 to 2 0.23 6 @ V o s - 10 V 0.8 to 2 0.26 10 @ V q s = 2.5 V 0.8 to 2

120N20P

Abstract: IXTQ120N20P 120N20
Contextual Info: PolarHTTM Power MOSFET IXTK 120N20P IXTQ 120N20P VDSS = 200 V ID25 = 120 A RDS on ≤ 22 m Ω N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ

Contextual Info: PolarHTTM Power MOSFET IXTK 120N20P IXTQ 120N20P VDSS = 200 V ID25 = 120 A RDS on ≤ 22 m Ω N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ

120N15P

Contextual Info: IXTQ 120N15P IXTT 120N15P PolarHTTM Power MOSFET VDSS = ID25 = RDS on ≤ 150 V 120 A Ω 16 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 150 V V VDSS VGSM

4900 SIEMENS

Contextual Info: Advanced Technical Information IXTQ 120N15P IXTT 120N15P PolarHTTM Power MOSFET VDSS ID25 RDS on = = ≤ 150 V 120 A Ω 16 mΩ N-Channel Enhancement Mode Maximum Ratings TO-3P (IXTQ) Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

IPP015N04N

Abstract: IPB015N04N IPB015N04 IEC61249-2-21 JESD22 PG-TO220-3 IPP015N04N G IPB015N04N G 015N04N
Contextual Info: IPP015N04N G Type IPB015N04N G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications

015N04N

Contextual Info: IPP015N04N G Type IPB015N04N G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications

VN1206L

Abstract: VNI210M VN1206M VN1210M
Contextual Info: Tem ic VN1206L/M, VN1210M S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number *DS on V(BR)DSS M i n (V ) VN1206L VN1206M 120 VN1210M Features Low On-Resistance: 3.8 Q Low Threshold: 1.4 V Low Input Capacitance: 35 pF