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    015N04L Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPB015N04LGATMA1

    Power Field-Effect Transistor, 120A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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    Rochester Electronics IPB015N04LGATMA1 1,808 1
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    Vyrian IPB015N04LGATMA1 6,885
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    015N04L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Type 015N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level


    Original     		ipb015n04lpg-to263-3015n04l PDF

    IEC61249-2-21

    Abstract: IPB015N04L JESD22 V8002
    Contextual Info: Type 015N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level


    Original     		ipb015n04lpg-to263-3iec61249-2-21015n04l+2jesd22v8002 PDF

    015N04L

    Abstract: IPB015N04L IPB015N04L G JESD22
    Contextual Info: Type 015N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level


    Original     		ipb015n04lpg-to263-3015n04lipb015n04l g+1jesd22 PDF