G 3500 Search Results

ECG2389 MOSFET

Abstract: ECG2373 ECG2389 ECG2383 ECG2371 ECG2382 ECG2384 ECG2372 ECG2386 ECG2392
Contextual Info: Power MOSFETS ECG Type E C G 2392 E C G 238 6 ▲ E C G 238 4 E C G 290 0 E C G 238 9 EC G 239S E C G 238 2 A Compì to ECG2383 E C G 238 3 (Compì to ECG2382) EC G 66 E C G 2371 E C G 239 6 E C G 237 2 A E C G 237 3 A Description and Application Transcon­

Contextual Info: MBRF4080CT-G MBRF4090CT-G MBRF40100CT-G SENSITRON SEMICONDUCTOR Green Products Technical Data Data Sheet M2675, Rev. - MBRF4080CT-G/MBRF4090CT-G/MBRF40100CT-G SCHOTTKY RECTIFIER Applications: • Switching power supply • Converters • Free-Wheeling diodes • Reverse battery protection

Contextual Info: MBR2560CT-G MBRB2560CT-G MBR2560CT-1-G SENSITRON SEMICONDUCTOR Green Products Technical Data Data Sheet M2687, Rev. - MBR2560CT-G/MBRB2560CT-G/MBR2560CT-1-G SCHOTTKY RECTIFIER Applications: • Switching power supply • Converters • Free-Wheeling diodes • Reverse battery protection

C365N

Abstract: C384 SCR C364 D60-400 C386 C185G C186 C364A C365 C365A
Contextual Info: INVERTER SCR's 110 .1 280 275 TO 400 A M P E R E S | GETYPE CONSTRUCTION C 1 8 4 /C 1 8 5 C 186 C 364 C 36 5 C 38 4 /C 3 8 5 C 386 A M P L IF Y IN G G ATE A M P L IF Y IN G G ATE A M P L IF Y IN G G ATE A M P L IF Y IN G G ATE A M P L IF Y IN G G A TE A M P L IF Y IN G

C384 SCR

Abstract: C386P SCR C385 C386G C185N C386 C185G C186 C364 C364A
Contextual Info: INVERTER SCR's 110 .1 280 275 TO 400 AMPERES | G ETYPE CONSTRUCTION | ELEC TR IC A L SPECIFICATIONS VOLTAGE RANGE FORWARD CONDUCTION IT R M S |2t C186 C364 C 365 C384/C 385 C386 A M P L IF Y IN G G ATE A M P L IF Y IN G G ATE A M P L IF Y IN G G ATE A M P L IF Y IN G

SCR 400V 1000A

Abstract: TBS73500A TBS735 SCR 400V 3000A 10C2 BP107 C781
Contextual Info: mmatoc TBS7 3500A Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 P hS S G C o n tro l S C R Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 _ _ _ _ . . 7 r— M A R K IN G 3500 Amperes Average

GE C712

Abstract: C612 C613 C648 C648E C648M C648P C648T C712 SCR firing inverter circuit
Contextual Info: 700 TO 1500 AMPERES C648 C612 C 613 C 712 A M P L IF Y IN G G ATE A M P L IF Y IN G G A TE A M P L IF Y IN G G A TE A M P L IF Y IN G GATE 5 00 1200 1500-1800 GE TYPE CONSTRUCTION ELECTRICAL SPECIFICATIONS VOLTAGE RANGE 1500-2000 S 1500-2000 FORWARD CONDUCTION

Semikron SK 3 G

Abstract: Semikron sk 1/08
Contextual Info: S1E D fllBbL.71 0003032 S1Û se MIKRD n SEMIKRON INC Ifrm s maximum values for continuous operation V rsm V rrm 3A | 6,7 A 1,9 A V 200 400 600 800 1000 1200 Symbol Conditions Ifav 4,3 A SK 1 G 01 S K 1 G 02 SK 1 G 04 SK 1 G 06 SK 1 G 08 SK1 G 10 SK 1 G 12 *

Contextual Info: TOSHIBA MICROWAVE POWER G aAs FET MICROWAVE SEMICONDUCTOR TNM2600-7 TECHNICAL DATA FEATURES : • H IG H PO W ER ■ H IG H G AIN ■ H E R M E T IC A LL Y SEALED PA C K A G E PidB = 39-5 dB m at 2.6 G H z G-|cib = 8-5 dB at 2.6 G H z RF PERFORMANCE SPECIFICATIONS Ta = 25°C

C384 SCR

Abstract: C385 C384 C386P SCR C385 C185G C186 C364 C364A C365
Contextual Info: I N V E R T E R SCR's 110.1 280 275 TO 400 AM PERES | GETYPE CONSTRUCTION | ELECTRICAL SPECIFICATIONS VOLTAGE RANGE C 1 8 4 /C 1 8 5 C 186 C 364 C 36 5 C 38 4 /C 3 8 5 C 386 A M P L IF Y IN G G ATE A M P L IF Y IN G G ATE A M P L IF Y IN G G ATE A M P L IF Y IN G

zx76-ws

Contextual Info: Digital Step Attenuator G% G% 6WHS 6LQJOH 6XSSO\ 9ROWDJH %LW : '& 0+] 6HULDO &RQWURO ,QWHUIDFH 2TQFWEV GCVWTGU ‡ /RZ ,QVHUWLRQ /RVV ‡ +LJK ,3  G%P 7\S ‡ ([FHOOHQW UHWXUQ ORVV  G% 7\S ‡ ([FHOOHQW DFFXUDF\  G% 7\S ‡ 6LQJOH 6XSSO\ 9ROWDJH 9

Contextual Info: Digital Step Attenuator G% G% 6WHS %LW 6LQJOH 6XSSO\ 9ROWDJH : '& 0+] 6HULDO &RQWURO ,QWHUIDFH 2TQFWEV GCVWTGU ‡ /RZ ,QVHUWLRQ /RVV ‡ +LJK ,3  G%P 7\S ‡ ([FHOOHQW UHWXUQ ORVV  G% 7\S ‡ ([FHOOHQW DFFXUDF\  G% 7\S ‡ 6LQJOH 6XSSO\ 9ROWDJH 9

Contextual Info: CONFIDENTIAL D p e ra tin g T e m p e ra tu re Range -4 0 t o +85 d e g re e s C S to ra g e T e m p e ra tu re Range -5 5 to +125 d e g re e s C V c c V o lta g e , V d c +9,0 V tu n e V o lta g e , V d c +13,0 DC V o lta g e applied t o RF o u t + / - 25

Contextual Info: TYPE G-20 miniature connectors G 2 - 20P G 2 - 20S G3 - 20P G3 - 205 G 4 - 2 OP G 4 - 205 i G2 - 2 0 P G3 - 2 0 P G 4 - 20 P G X 4 - 20S G X 4 - 20P ILLUSTRATIONS ACTUAL SIZE NOTES T h e s e u n iq u e , re v e r se p in a n d s o c k e t c o n ­ n e c to rs a r e d e s ig n e d f o r u se in s m a ll a r e a s ,

HA 12058

Abstract: TRANSISTOR CD 2897 L22A HA 3089 ic 7492 series TRANSISTOR 2SC 458 2SC 968 NPN Transistor
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT - 10 G H z • LOW NOISE FIGURE: 1.7 dB at 2 G H z 2.6 dB at 4 G H z • HIGH ASSOCIATED GAIN: 12.5 dB at 2 G H z 8.0 dB at 4 G H z • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

Contextual Info: Digital Step Attenuator Ω '& 0+] G% G% 6WHS %LW 3DUDOOHO &RQWURO ,QWHUIDFH 6LQJOH 6XSSO\ 9ROWDJH 2TQFWEV GCVWTGU ‡ /RZ ,QVHUWLRQ /RVV ‡ +LJK ,3  G%P 7\S ‡ ([FHOOHQW UHWXUQ ORVV  G% 7\S ‡ ([FHOOHQW DFFXUDF\  G% 7\S ‡ 6LQJOH 6XSSO\ 9ROWDJH 9

Contextual Info: Digital Step Attenuator G% G% 6WHS 6LQJOH 6XSSO\ 9ROWDJH Ω '& 0+] %LW 3DUDOOHO &RQWURO ,QWHUIDFH 2TQFWEV GCVWTGU ‡ /RZ ,QVHUWLRQ /RVV ‡ +LJK ,3  G%P 7\S ‡ ([FHOOHQW UHWXUQ ORVV  G% 7\S ‡ ([FHOOHQW DFFXUDF\  G% 7\S ‡ 6LQJOH 6XSSO\ 9ROWDJH 9

Scans-048

Abstract: DSAGER00042 3433B
Contextual Info: V erw . Type F F A C 50 A G, I Uf b u, Ua U sperr la spitz 1= V (A ) (V ) (V ) (m A ) (m A ) - A C 50 K 4 1.2 E C 50 K 6,3 1.3 L G 200 K 12.6 0.67 - L G 998 S tr 3 3.6 - L G 1000 S tr 3 12 < «H ^ g s p i t z I g S p i t z f '»a* (V ) (m A ) (k H z ) 300

IR 18779

Abstract: NEC Ga FET marking L nec gaas fet marking
Contextual Info: DATA SHEET GaAs MES FET NE76084 C to Ku BAND LOW NOISE AM PLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise fig u re & High a sso cia te d gain • G ate le n g th : Lg = 0.3 /¿m • G ate w id th : Wg NF = 1.6 dB TYP ., G a = 9.0 dB TYP. at f = 12 G H z

Contextual Info: CONFIDENTIAL TABLE 1.1, ABSOLUTE MAXIMUM RATINGS O p e ra tin g T e m p e r a t u r e S torage Vcc T em perature V o lta g e , V tu n e Range -40 t o +85 d e g r e e s C -55 to +100 d e g r e e s C Vdc +9,0 V o lta g e , V d c DC V o l t a g e I +13.0 applied t o

IN4148

Abstract: MS-001 MS-012-AA MS-013-AA SSM2019 SSM2019BNZ SSM2019BRNZ "Microphone Preamplifier" 1.5V high performance audio preamplifier
Contextual Info: a FEATURES Excellent Noise Performance: 1.0 nV/÷Hz or 1.5 dB Noise Figure Ultra-low THD: < 0.01% @ G = 100 Over the Full Audio Band Wide Bandwidth: 1 MHz @ G = 100 High Slew Rate: 16 V/␮s @ G = 10 10 V rms Full-Scale Input, G = 1, VS = ؎18 V Unity Gain Stable

Contextual Info: MD16R1624 8/G DF0 MD18R1624(8/G)DF0 32 Bit RIMM Module Change History Version 1.0 (July 2002) * First copy. * Based on version 1.1 (July 2002) 256/288Mbit A-die 32 bit RIMM Datasheet Version 1.0 July 2002 MD16R1624(8/G)DF0 MD18R1624(8/G)DF0 32 Bit RIMM® Module

CM1800DY-34S

Abstract: 103T-D 10 kw igbt inverter thermistor ntc 60 1102
Contextual Info: CM1800DY-34S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual Half-Bridge IGBTMOD HVIGBT Series Module 1800 Amperes/1700 Volts G F A G G J (18 PLACES) H (12 PLACES) G E2 G2 C2 E2 C1 C1 F S L C2E1 V C B D C2E1

C384 SCR

Abstract: C185 c180 scr high impedance rf voltmeter circuit diagrams C185B C185n C184 R C185G C186 C364A
Contextual Info: I N V E R T E R SCR's 110.1 280 275 TO 400 AM PERES | GETYPE CONSTRUCTION C 1 8 4 /C 1 8 5 C 186 C 364 C 36 5 C 38 4 /C 3 8 5 C 386 A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G