FZT692 Search Results

Contextual Info: SOT223 NPN SILICON PLANAR M EDIUM POWER HIGH GAIN TRANSISTOR FZT692B ISSUE 3 - OCTOBER 1995 - FEATURES * High Gain + Very low saturation voltage A P P L IC A T IO N S * Darlington replacement * Relay drivers, DC-DC converters P A R T M A R K IN G D ET A IL FZT692B

FZT692

Contextual Info: SOT223 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR ISSUE 3 - NOVEMBER 1995 FEATURES * High gain and Very lo w saturation voltage APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE - FZT692B PARTMARKING DETAIL - FZT792A c B ABSOLUTE MAXIMUM RATINGS

Contextual Info: SOT223 PNP SIUCON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR FZT792A ISSUE 3 - NOVEM BER 1995 FEATURES * High gain and Very low saturation voltage ♦ APPLICATIONS * Battery powered circuits COMPLEMENTARY T Y PE PARTMARKING DETAIL- FZT692B FZT792A B PARAMETER

Contextual Info: A Product Line of Diodes Incorporated Green FZT692B 70V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 70V   BVCBO > 70V   IC = 2.0A High Continuous current Case: SOT223 Case material: molded plastic. “Green” molding compound.

Contextual Info: FZT692B Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)70 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)55.0 h(FE) Min. Current gain.150 h(FE) Max. Current gain.

FZT792A

Abstract: FZT692B DSA003717
Contextual Info: SOT223 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR FZT792A ISSUE 3 - NOVEMBER 1995 FEATURES * High gain and Very low saturation voltage C APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE PARTMARKING DETAIL - E C FZT692B FZT792A B ABSOLUTE MAXIMUM RATINGS

Contextual Info: SOT223 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR FZT792A ISSUE 3 - NOVEMBER 1995 FEATURES * High gain and Very low saturation voltage C APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE PARTMARKING DETAIL - E C FZT692B FZT792A B ABSOLUTE MAXIMUM RATINGS

FZT692B

Abstract: DSA003713
Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT692B ISSUE 3 - OCTOBER 1995 TYPICAL CHARACTERISTICS - Volts V 0.1 1 0.01 1 10 VCE(sat) v IC VCE=2V - (Volts) 1K 500 V 0.01 0.1 1.4 IC/IB=100 1.2 1.0 0.8 0.6 0.4 0.01 0.1 1 hFE v IC VBE(sat) v IC

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT692B ISSUE 3 - OCTOBER 1995 I- FEATU RES * High Gain + Very low saturation voltage * * Ul A P P L IC A T IO N S Darlington replacement Relay drivers, DC-DC converters

Contextual Info: Transistors SMD Type Product specification FZT692B SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 High gain + very low saturation voltage. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 1 base 3 2 +0.1 0.70-0.1

MARKING SMD npn TRANSISTOR 1a

Abstract: FZT692B smd transistor marking 1A TRANSISTOR SMD 1A smd ic marking 1A smd transistor 2A TRANSISTOR SMD 1a 9 SMD TRANSISTOR MARKING 2A SOT223 marking 1A BR smd transistor MARKING
Contextual Info: Transistors SMD Type NPN Silcon Planar Medium Power High Gain Transistor FZT692B SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 High gain + very low saturation voltage. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT692B ISSUE 3 - OCTOBER 1995 IC/IB=200 IC/IB=100 IC/IB=10 0.8 Tamb=25°C 0.6 0.6 0.4 0.4 0.2 0.2 0.01 0.1 1 10 0.01 VCE=2V 1.5K 1.0 1K 0.8 0.6 500 0.4 0.2 0.01 0.1 1.6 0.6 0.4 0.01 + 0.1 1 10 SYMBOL

IHLP1212BZER2R2M11

Abstract: EN854 IHLP1212BZE
Contextual Info: LTC3375 8-Channel Programmable, Parallelable 1A Buck DC/DCs Features Description 8-Channel Independent Step-Down DC/DCs n Master-Slave Configurable for Up to 4A Per Output Channel with a Single Inductor n Independent V Supply for Each DC/DC IN 2.25V to 5.5V

FZT858

Abstract: fzt957
Contextual Info: SOT223 HIGH C U R R EN T HIGH PERFO RM AN CE T R A N S IS T O R S Pinout : 1-Base, 2&4-Collector, 3-Emitter r Type NPN FZT857 VCBO V v CEO V 'C(cont) A Pfot W hFE M in/M ax at Ic / V ce m A / Volts v CE(sat) Max at lc / Iß Volts mA fT Typ MHz Com plem ent

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

EN854

Abstract: 22uH 1A
Contextual Info: LTC3375 8-Channel Programmable, Parallelable 1A Buck DC/DCs Features Description 8-Channel Independent Step-Down DC/DCs n Master-Slave Configurable for Up to 4A Per Output Channel with a Single Inductor n Independent V Supply for Each DC/DC IN 2.25V to 5.5V

DMN62D4SDW-7

Abstract: ANALOG DEVICES ASSEMBLY DATE CODE Analog devices assembly code marking Information DMG2307L Analog devices marking Information Analog devices marking DMN2027USS-13 a/ANALOG DEVICES ASSEMBLY DATE CODE TL432BSA-7 DJT4031N
Contextual Info: DATE: 29th April, 2013 PCN #: 2094 – Rev01 PCN Title: Qualification of "Diodes Technology Cheng Du Company Limited" (DTC) as an Additional Assembly & Test Site for SOP-8, SOT-23, SOT223, SOT-323, SOT-363, SSOT-23, and SOD-323 Packaged Parts,

Contextual Info: DATE: 13th January, 2015 INFORMATIONAL PCN #: 2166 (REV 01) PCN Title: Addition of Date Code Information to Part Marking Dear Customer: This is an announcement of change(s) to products that are currently being

Contextual Info: DATE: 28th November, 2012 PCN #: 2041 REV 02 PCN Title: Conversion to Copper Bond Wire on Selected Discrete Products Dear Customer: This is an announcement of change s to products that are currently being

Contextual Info: LTC3375 8-Channel Programmable, Parallelable 1A Buck DC/DCs Features Description 8-Channel Independent Step-Down DC/DCs n Master-Slave Configurable for Up to 4A Per Output Channel with a Single Inductor n Independent V Supply for Each DC/DC IN 2.25V to 5.5V

GE1030

Abstract: FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6
Contextual Info: PRODUCT CHANGE NOTICE DCS/PCN-1119 Rev 00 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: October 30, 2008 November 13, 2008 Integrated Circuits and Discrete Semiconductors New manufacturing location and addition of new mould compounds

ztx1053a

Abstract: ZTX851 ZTX853
Contextual Info: Medium Power Transistors NPN Medium Power Transistors 60 to 100 Volts These 60V to 100V devices provide excellent high performance in a wide variety of both through hole and surface mount packages. The devices are ideally suited to load management functions and their improved efficiency enables larger

FMMT634TA

Abstract: FMMTA42QTA FZT689BTA GL-106 fzt1151 fmmt6517ta Dual PNP Transistor FMMT734TA FMMT723TA FR107-T-F
Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1– NOVEMBER 1998 FEATURES * 500 Volt VCEO * 150mA continuous current * Ptot = 2 Watt C E C PARTMARKING DETAIL – FZT560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage