FUTURE TECHNOLOGY CROSS REFERENCE Search Results

LD33 VOLTAGE REGULATOR

Abstract: LD33 VOLTAGE REGULATOR 3.3v NIKKO NR 9600 LD33 regulator TRANSISTOR si 6822 LD50 VOLTAGE REGULATOR st LD33 smd code marking ld33 LD33 VOLTAGE REGULATOR ST ld33 st
Contextual Info: Shortform Catalog January 2004 Micrel Semiconductor • 1849 Fortune Drive • San Jose, CA 95131 • USA • tel +1 408 944-0800 • fax +1 408 944-1000 Micrel Shortform Catalog January 2004 2004 Micrel, Inc. The information furnished by Micrel, Inc., in this publication is believed to be accurate and reliable. However, no responsibility is assumed by Micrel for its use, nor any

AN1266

Abstract: RAM cells bit lines "select line" nand gate layout NOR FLASH
Contextual Info: AN1266 APPLICATION NOTE Benchmarking Flash NOR and Flash NAND memories for Code and Data Storage CONTENTS • INTRODUCTION ■ CELL STRUCTURE ■ CELL DIMENSIONS ■ MULTI LEVEL CELLS ■ OPERATIONAL DIFFERENCES ■ COST TRENDS ■ CONCLUSION ■ REFERENCES

Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity

Abstract: varactor
Contextual Info: Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity Cong Huang1, Koen Buisman1, Peter J. Zampardi2, Lis K. Nanver1, Lawrence E. Larson3 and Leo C. N. de Vreede1 1 Delft Institute of Microsystems and Nanoelectronics DIMES , Delft University of Technology,

alpine 3555

Abstract: Newport Components 1013 clare 852 unitronics JI 3009-2 1131L gentech A320 54711 74146
Contextual Info: You are in the Sales Info File • Click for Main Menu Product Categories CLICK ANY ITEM Return to Main Menu PC Card Power Protected Switches Low-Dropout Linear Voltage Regulators Switch-Mode Voltage Regulators Voltage References Switched-Capacitor Voltage Converters

QS3R861

Abstract: QS32X862 74232 89 8937 000 napoli MD 202 CMOS 4002 PI5C3251 matrix mux intel 8061
Contextual Info: Selector Guide for QuickSwitch Products the leading provider of QuickSwitch products. www.idt.com BRO-QuickSwitch-00059 LIFE SUPPORT POLICY Integrated Device Technology’s products are not authorized for use as components in life support or other medical devices or systems hereinafter life support devices unless a specific written

DDR2-667

Abstract: PC2-5300 SSTL-18 DDR2 DIMM 240 pinout 4gb Nanya Technology
Contextual Info: NT1GT72B89D2BD-3C / NT2GT72B8PD2BD-3C / NT4GT72B4ND2BD-3C 1GB: 128Mx72 / 2GB: 256Mx72 / 4GB: 512Mx72 240pin DDR2 SDRAM Fully Buffered DIMM Based on 128Mx8 1GB/2GB , 256Mx4 (4GB), and 512Mx4 (8GB) DDR2 SDRAM Features • 1GB 128Mx72 and 2GB 256Mx72 DDR2 Fully Buffered DIMM

PP15K

Abstract: Nortel for the PASSPORT 15000 Commands PASSPORT 15000 ue9000 Passport 7000 NORTEL PASSPORT MSA cards NORTEL PASSPORT 7000 commands NORTEL PASSPORT 7000 NORTEL PASSPORT MSA-32
Contextual Info: WS# 59 Passport Virtual DCS with Multiservice Access Heidi Adams Technical Content: Medium Suggested Audience: Service Provider With demand shifting from private line to frame relay, ATM, and VPN services, service providers are challenged to effectively manage existing services while planning for new opportunities.

dram cross reference

Contextual Info: M E T R IC AM DIMM II Sockets Catalog 1307612 Revised 7-01 Dimensions are millimeters over inches Dual Read-Out for 8 Byte Memory Modules Product Facts • Sockets Dual Read-Out 8-Byte DRAM DIMM boards for 64-bit data bus ■ Staggered contact heights to reduce module insertion

AMIS-710324-A4

Abstract: PI3021 PI324MC-A4 Contact Image Sensor AMIS
Contextual Info: AMIS-710324-A4: 300dpi CIS Module Data Sheet 1.0 General Description The AMIS-710324-A4 PI324MC-A4 is a contact image sensor (CIS) module. It is a dual-analog-output contact image sensor, using MOS image sensor technology for high-speed performance and high sensitivity. The AMIS-710324-A4 is suitable for scanning A4 size

TLASC0022EA

Contextual Info: Stealth Dicing Technical Information for MEMS 2 Table of Contents 1. Introduction 2. Problems with dicing in MEMS fabrication processes 2.1 Grinding wheel type blade dicing 2.2 Making dicing a completely dry process 3. Stealth dicing technology 3.1 Basic principle of stealth dicing

XC9500

Abstract: eeprom programmer schematic
Contextual Info: FastFLASH: A New Electrically Erasable CPLD Technology  XBRF010 January, 1997 Version 1.0 Application Brief Summary The Xilinx FastFLASH technology, used in the XC9500 family, provides key advantages in reliability, density, and performance. This overview describes the FastFLASH process technology and compares it with EEPROM technology.

1-390172-6

Abstract: 390175-6 MO-161 PC-100 dram cross reference amp dram socket 390040-4
Contextual Info: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 METRIC Catalogue 1654741 DIMM II Sockets Revised 1-04 Dimensions are millimetres over inches Dual Read-Out for 8 Byte Memory Modules Product Facts • Sockets Dual Read-Out

M12 connector PCB

Abstract: 61076-2-109 CAT-6a military connector cross reference molex cat6 cable CAT6A cables
Contextual Info: Rugged, sealed M12 CAT6A Connector System with innovative x-code cross-shielding achieves superior signal integrity and up to 10 Gbps Ethernet for vision systems and other high-speed data transfer applications in harsh environments The Brad Micro-Change® M12 CAT6A connector system with its innovative

Contextual Info: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

jedec MS-026 ABA

Abstract: ICS83210AYT MS-026 CY2HH8110 ICS83210 ICS83210AY ICS83210AYLF idt cross TQFP JEDEC tray JEDEC tray standard TQFP
Contextual Info: ICS83210 LOW SKEW, 1-TO-10 HSTL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS83210 is a low skew, 1-to-10 HSTL Fanout ICS Buffer and a member of the HiPerClockS Family HiPerClockS™ of High Performance Clock Solutions from IDT. The class II HSTL outputs are balanced push-pull

complementary bipolar transistor driver schematic

Abstract: L9801 12V DC to 19V dC converter schematic diagram
Contextual Info: APPLICATION NOTE HIGH SIDE MONOLITHIC SWITCH IN MULTIPOWER-BCD TECHNOLOGY b y C.Cin i, C. Diazzi, D. Ro ssi, S. Sto rti Recent advances in integrated circuit technology have allowed the realization of a new mixed process integrating isolated DMOS power transistors in

CBC 640

Abstract: cannon plug standard
Contextual Info: TEMPUS C B C 20 2mm Interconnect Introduction With the growth of system circuit size combined with the requirement to manipulate larger amounts of data at greater speeds, bus systems and their interconnect components are being pushed to their limits by the latest microprocessors. The

samsung 10K filing SEC

Abstract: samsung 10K filing SEC 2015 List of company identifications samsung electronics 10K filing SEC INTEL 8049 PC NEC 9736 samsung 10K 2015 DRAM 4416
Contextual Info: FORM 10-Q UNITED STATES SECURITIES AND EXCHANGE COMMISSION Washington, DC 20549 [X] QUARTERLY REPORT PURSUANT TO SECTION 13 OR 15 d OF THE SECURITIES EXCHANGE ACT OF 1934 For the quarterly period ended December 2, 1999 OR [ ] TRANSITION REPORT PURSUANT TO SECTION 13 OR 15(d) OF THE SECURITIES

MacAir A3818

Abstract: ARX-4418 sc4487
Contextual Info: ACT 4489 SINGLE TRANSCEIVER FOR MIL-STD-1553/1760 Features CIRCUIT TECHNOLOGY www.aeroflex.com/act1.htm • +5 / ±12 Volt Supply Operation General Description • Low Power Dissipation • Small Size & Light Weight • Outstanding MIL-STD-1553 performance

MT49H16M18

Contextual Info: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate

B1086

Abstract: 443-811 coretek c4690
Contextual Info: UNITED STATES SECURITIES AND EXCHANGE COMMISSION WASHINGTON, D.C. 20549 FORM 8-K CURRENT REPORT PURSUANT TO SECTION 13 OR 15 d OF THE SECURITIES EXCHANGE ACT OF 1934 Date of report: August 7, 2000 Date of earliest event reported: Not Applicable NORTEL NETWORKS CORPORATION

Contextual Info: Preliminary GS4288S09/18L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18 288Mb SIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: Preliminary GS4288S09/18L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18 288Mb SIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: PRELIMINARY DATA SHEET 128MB DDR SDRAM S.O. DIMM HB54A1288KM 16M words x 64 bits, 1 Bank Features The HB54A1288KM is a 16M × 64 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 4 pieces of 256Mbits DDR SDRAM (HM5425161BTT) sealed in TSOP package and 1 piece of serial EEPROM (2k bits