FUJITSU TG H Search Results

2SC3844

Abstract: 2SC3847 2SC3842 2SC3843 2SC3845 2SC3846 2SC3947 2sc3948
Contextual Info: FUJITSU MICROELECTRONICS 31 E 3?m?b2 D OGlbbSñ F MI 2 r - 3 3 ~ 13 January 1990 Edition 1.1 Fujitsu PRODUCT P R O FILE : 2SC3847 Silicon High Speed Power Transistor 2SC3847 800V, 10A ABSOLUTE MAXIMUM RATINGS Parameter Symbol Storage Temperature Range T*tg

TGS 880

Contextual Info: FUJITSU September 1996 Revision 1.0 DATA SHEET - EOB2U V6482- 60/70 T G -S 16MByte (2Mx 64) CMOS EDO DRAM Module -3.3V General Description TheEOB2UV6482-(60/70)TG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized

Contextual Info: September 1996 Revision 1.0 FUJITSU DATA SHEET - E O B 1 U V 6 4 1 1 /4 -(60/70)TG -S 8MByte (1Mx64) CMOS EDO DRAM Module - 3.3V General Description The E O B 1 U V 6 4 1 (1 /4 )-(6 0 /7 0 )T G -S is a high pe rfo rm an ce, E D O (E xten ded D ata O ut) 8-m e ga byte dyn am ic RAM m odule o rg a ­

5011s

Abstract: 2SC3846
Contextual Info: FU JI TS U M I C R O E L E C T R O N I C S 31E D E3 374=57b2 QOlbbBM S Q F f l l T '3 3-/3 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE^ 2SC3846 Silicon High Speed Power Transistor 2SC3846 800V, 6A A B S O LU T E M A X IM U M R ATIN G S Parameter Storage Temperature Range

2SC3844

Abstract: 374171 reo4
Contextual Info: FUJ I TS U M I C R O E L E C T R O N I C S 31E D a 374R7b5 G01bb2b b S F M I T-33 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC3844 Silicon High Speed Power Transistor 2S C 3844 4 5 0 V , 15A A B S O L U T E M A X IM U M R A T IN G S Parameter Storage Tem perature Range

mb88625b

Abstract: MB88625B-PF MBM27C256A-25CZ D64001S-3C P Channel Equivalent to buz 350 MBM27C256A-25CV MB88625B-PSH pa2al MB886 GD03
Contextual Info: FUJITSU LTD S3E D m 3 7 4 cì75fc. GD03131 bOQ * F C A J cP June 1992 E m h n 1 -° T _ DATA SHEET = = = - FUJITSU / F2MCB-4L FAMILY MB88620B SERIES SINGLE CHIP MICROCONTROLLER WITH ADC AND VFD DRIVER DESCRIPTION The Fujitsu MB88620B Seríes is a member of the F2M C -4L Family, and features a 26

spa 40

Contextual Info: MCP Multi-Chip Package FLASH MEMORY 8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY MB84VB2000-io/MB84VB2001-io • FEATURES • Contain 2 chips of MBM29LV800A, and each chip have separate CE.

Contextual Info: MCP Multi-Chip Package FLASH MEMORY & SRAM 8M (x 8/x 16) FLASH MEMORY & 1M (x 8) STATIC RAM M B84 VA2006-1o/MB84 VA2007-1o • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature -2 0 to +85°C

DS06-20112-1E

Abstract: CE77
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20112-1E Semicustom CMOS Embedded array CE77 Series • DESCRIPTION The CE77 series 0.25 µm CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.

Contextual Info: M CP Multi-Chip Package FLASH M EM ORY & SRAM 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM MB84VA2002-1o/M B84 VA2003-1o • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature -2 0 to +85°C

Contextual Info: MCP Multi-Chip Package FLASH MEMORY & SRAM 8M (x 8) FLASH MEMORY & 1M(x 8) STATIC RAM M B84 VA2004-1o/MB84 VA2005-1o • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature -2 0 to +85°C

CE77

Abstract: 0.25-um CMOS standard cell library inverter 0.25-um standard cell library
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20112-2E Semicustom CMOS Embedded array CE77 Series • DESCRIPTION The CE77 series 0.25 µm CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.

CE77

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS06-20112-2Ea Semicustom CMOS Embedded array CE77 Series • DESCRIPTION The CE77 series 0.25 m CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.

2SC2433

Abstract: 2SG24 2SA1043 2SC2434 2SA1044 2SC1043 1baa
Contextual Info: FUJITSU MICRO ELE CTRONICS 3 IE D Bi 3 7 4 m 2 QDlbSOH 3 S F M I 3 T - 33 - X3 FUJITSU Edition 1.1 PRODUCT PROFILEZ 2SA1043, 2SA1044, 2SC2433, 2SC2434 Silicon High Speed Power Transistor DESCRIPTION T h is series are silicon PNP/NPN planer general purpose, high power switching

diode in3064

Contextual Info: August 1990 Edition 3.0 - FUJITSU DATA SHEET MB40578/40578-7 1 CHANNEL 8-BIT VIDEO A/D CONVERTER 1 CHANNEL 8-BIT VIDEO A/D CONVERTER 20MSPS The Fujitsu MB40578 is a low power ultra-high speed video A/D converter fabricated with Fujitsu Advanced Bipolar Technology. The

Contextual Info: October 1989 Edition 1.0 FUJITSU DATA S H EE T MB81C4258A-60/-80/-10 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 262,144 x 4 BIT Static Column Mode Dynamic RAM The Fujitsu MB81C4258A is CMOS fully decoded dynamic RAM organized as 262,144 words x 4

Contextual Info: MCP Multi-Chip Package FLASH MEMORY & SRAM 8M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM M B84 VA2000-1o/MB84 VA2001 -10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature -2 0 to +85°C

SDRAM DIMM 1997

Contextual Info: FUJITSU May 1997 Revision 1.0 data sheet SDC8UV7284- 67/84/100/125 T-S 64MByte (8M x 72) CMOS Synchronous DRAM Module General Description The SDC8UV7284-(67/84/100/125)T-S is a hgh performance, 64-megabtye synchronous, dynaric RAM module organeed as 8M words by 72 bits, in a 168-pin, dual-in-line memory module (DIMM) package.

Contextual Info: June 1990 Edition 3.0 FUJITSU DATASHEET MB509 TWO MODULUS PRESCALER WITH STAND-BY MODE TWO MODULUS PRESCALER WITH STAND-BY MODE The Fujitsu M B 5 0 9 is a low power two modulus prescaler which enables pulse swallow function. The M B 5 0 9 is used in P h a se Locked Loop PLL frequency

Contextual Info: FUJITSU M I CRO EL EC TR ON IC S FUJITSU S3E D • 3 7 ‘H 7 t a GD07417 7 ■ MB85235-10 IH X 9 DRAM MODULE MB85235-12 1,048,576 x 9 BIT DYNAMIC RANDOM ACCESS MEMORY MODULE The F u j i t s u MB85235 is a fully decoded, dynamic CMOS r a n d o m access m e mory module w i t h eight MB81C1000, in

BF480

Abstract: R950 Avantek S 2n3570 2SC988
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W V(BR)CBO fosc Max Gp Po N.F. at fTest (V) (Hz) (dB) (W) (dB) (Hz) Ic Max (A) Toper MatI. Max (OC) Package Style UHF/Microwave Transistors, Bipolar NPN (Cont'd) 5 10 15 20 2N6619

Contextual Info: FUJITSU May 1997 Revision 1.0 data sheet SDC8UV6484- 67/84/100/125 T-S 64MByte (8M x 64) CMOS Synchronous DRAM Module General Description The SDC8U V6484-(67/84/100/125)T-S is a hgh performance, 64-megabtye synchronous, dynarrc RAM module organeed as 8M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.

M5440

Abstract: 6m312 201XXXXXX
Contextual Info: ASSP TIMING EXTRACTION BANDPASS FILTER s e im h ïî: . • DESCRIPTION The F1, F2 and F3 Series were developed as timing extraction filters for primary, secondary, and tertiary digital

Contextual Info: cP IITSU April 1998 Revision 1.0 data sheet PDC2UL6484H- 102/103 T-S 16MByte (2Mx 64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC2UL6484H-(102/103)T-S is a high performance, 16-megabyte synchronous, dynamic RAM module organized as 2M