FUJITSU IR C CODE Search Results

Contextual Info: F U J I TS U M I C R O E L E C T R O N I C S 47E D • 3 7 4 tì7bE 0 0 1 6 55 5 fl ■ F U I - 7 75 2 7 " 0 7 ^ ''- r l ir a m i , May 1991 FUJITSU E m io n 2 - ° DATA SHEET MB87057 DTMF RECEIVER DUAL TONE MULTI FREQUENCY RECEIVER The MB87057 is a one chip DTMF receiver with an input amplifier gain adjuster and

MB1412A

Abstract: ST6C 4411E SECDED 14-1-2A RVC36 CI 74S04 74S00 74S11 si526
Contextual Info: LS-TTL ERROR CHECKING AND CORRECTION CIRCUIT F U JIT S U May 1981 FUJITSU MB 1412A EIG H T-B IT SLICE ECC LSI T h e M B 1 4 1 2 A is an 8 - b it slice E r r o r C h e c k in g and C o rr e c tio n E C C m o n o lit h ic in te g ra te d c ir c u it fa b r ic a te d in a lo w * p o w e r S c h o tt k y T T L process. T h e dev ic e

Intel 2118

Abstract: L7T2 MB8118-10
Contextual Info: FUJITSU MICROELECTRONICS 7ft !>Ë| 3?iH7fc,H D0D27Û3 7 | JPftf£3-/r MB8118-10 MB8118-12 FU JITSU M IC R O E L E C T R O N IC S NMOS 16,384-BIT DYNAMIC RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MB8118 is a fully de­ coded dynamic NMOS random ac­ cess memory organized as 16,384

10-16L

Abstract: B7-047 Z/Diode 10-16L
Contextual Info: FUJITSU MB 7047 / ECL128-BIT BIPOLAR RANDOM ACCESS MEMORY G 2 I G- ^-0 0 2 5 2 8 % iptem ber 1978 T '¿ S Z fr F a r 128-BIT BIPOLAR ECL RAIMDOM ACCESS MEMORY The Fujitsu MB 7047 is a fu lly de­ coded 128-bit read/write ECL random access memory designed fo r high-speed

MB87017A

Abstract: 20milliseconds
Contextual Info: FUJITSU D T M F R E C E IV E R MB87017A August 1988 Editon 2.0 DUAL TONE MULTI-FREQUENCY RECEIVER The Fujitsu MB87017A Is a single-chlp Dual Ton Multi-Frequency DTMF receiver th a t detects and decodes 16 DTMF tone pairs and provides a 4 -b it hexadecimal code output fo r each pair. The DTMF receiver features low power

Contextual Info: MB86940 FUJITSU SPARCIite Companion Chip JUNE 1994 DATA SHEET FEATURES_ • In tegrated Interrupt R equest C ontroller, Tinier, and Serial D ata T ransm itter/R eciver • SPA RCIite p rocessor interface • 4 0 M H z operation

M3-12H

Abstract: fujitsu gaas marking code fujitsu gaas mm catalog CAPACITOR JL 1500 SJPL 4012K 1994C
Contextual Info: PACKAGE MARKING Fujitsu's optoelectronic device has the following marking attached to each package or package case. cP 1. Manufacturer's Name: F or FUJITSU 2. Part Number: See part numbering systems 3. Serial Number: Serial number consists of Date Code and Sequence Number.

Fujitsu 42-pin 1989

Abstract: 42-pin D 1989 MB3758 MB74LS367 MB4051 R05011 oj41 fujitsu 42pin 1988 fujitsu 1988 fujitsu 42pin
Contextual Info: FUJITSU MICROELECTRONICS 31E ]> B 374m2 aOlblST 3 M F I U T ^ i - \ 0 - W 020101010290010101020200010101010101 Ju ly 1989 Edition 1.0 8-CH A N N EL 10-BIT A/D C O N V E R T E R The Fujitsu MB4051 is a general purpose analog-to-digital converter A D C which features eight channels of analog inputs,

MBL8031

Abstract: INTEL MCS-80 MBL8051AH intel 8031 instruction set MBL8051 CER72F R77f MBL8031AH Fujitsu IR c code
Contextual Info: FU JITSU Advanced Products October 1986 • MBL8 0 5 1 AH, MBL8 0 3 1 AH Edi,ion3° NMOS Single-Chip 8-Bit Microcomputer Description The Fujitsu MBL8051AH/8031 AH are single-chip 8-bit micro­ computers developed as members of the MBL8051 Series. These microcomputers have powerful architecture and instruction set

Diode zener 6281

Abstract: FPT-8P-M01 MB3761 MB123456P MB3761PF-E1 FPT-8P-M01 marking
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS04-27300-4Ea ASSP BIPOLAR VOLTAGE DETECTOR MB3761 • DESCRIPTION Designed for voltage detector applications, the Fujitsu Microelectronics MB3761 is a dual comparator with a builtin high precision reference voltage generator. Outputs are open-collector outputs and enable use of the ORconnection between both channels. Both channels have hysteresis control outputs. Because of a wide power

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS04-27300-4Ea ASSP BIPOLAR VOLTAGE DETECTOR MB3761 • DESCRIPTION Designed for voltage detector applications, the Fujitsu Microelectronics MB3761 is a dual comparator with a builtin high precision reference voltage generator. Outputs are open-collector outputs and enable use of the ORconnection between both channels. Both channels have hysteresis control outputs. Because of a wide power

Contextual Info: MB86831 FUJITSU S P A R C Iite S E R IE S 3 2 -B IT R IS C E M B E D D E D P R O C E S S O DATA S H E E T FE B R U A R Y 199 Built-in Internal Clock frequency multiplier circuit FEATURES Single vector trapping 66MH/., 80MHz and 100 MHz. versions each with

FPT-8P-M01 marking

Abstract: FPT-8P-M01 MB3761 F0605
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27300-4E ASSP BIPOLAR VOLTAGE DETECTOR MB3761 • DESCRIPTION Designed for voltage detector applications, the Fujitsu MB3761 is a dual comparator with a built-in high precision reference voltage generator. Outputs are open-collector outputs and enable use of the OR-connection between

40778

Abstract: Ccd 111a
Contextual Info: FUJITSU 8-BIT HIGH SPEED D/A CONVERTER MB40778 October 1988 Edition 4.0 8-BIT HIGH SPEED D/A CO N VERTER The Fujitsu MB 40778 is a 8-bit low power ultra-high speed video D /A con­ verter fabricated w ith Fujitsu Advanced Bipolar Technology. The MB 40778 can convert 8-bit digital signals in to analog signals at a rate o f DC to 20 megasamples/sec {MSPSL Because o f such high speed operation, the MB 40778 is

asi3

Abstract: mb8693
Contextual Info: SPARCIite Series 32-Bit RISC Embedded Processor MB86831 Package • 176-pin, Plastic SQFP • FPT-176P-M01 Features • 66 or 80 MHz CPU with on-chip clock multiplier • SPARC high performance RISC architecture • 8 window, 136 word register file • 16 address spaces, 256 Mbyte each

GSM 3g repeater circuit

Abstract: MB39C326
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS405-00001-0v01-E ASSP for Power Supply Applications 6MHz Synchronous Buck-Boost DC/DC Converter IC MB39C326 „ DESCRIPTION The MB39C326 is a high efficiency, low noise synchronous, Buck-boost DC/DC converter designed for

MB85R2001PFTN-GE1

Abstract: MB85R2001
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-13107-3Ea Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

LT 7232

Abstract: LT 7238 MB87020 LC 7258 cd 7231 z8080 MB87064 DIC20 6K8k lc 7252
Contextual Info: 16-BIT A /D AND D/À CONVERTER F U JIT S U MB87020 Septem ber 1988 E d itio n 1.0 16-BIT A/D AND D/A CONVERTER T he F u jits u M B 8 7 0 2 0 is a 50kSPS K ilo Sam ple Per Second 1 6 -b it A n alog to -D ig ita l and D ig ita l-to -A n a io g c o n v e rte r fa b ric a te d

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-13103-7E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

MB85R1001

Abstract: MB85R1001PFTN-GE1
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-13103-6Ea Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

ADCD02

Abstract: MB91470 MB91480 sk9147
Contextual Info: Fujitsu Microelectronics Europe Application Note MCU-AN-300108-E-V10 FR FAMILY 32-BIT MICROCONTROLLER MB91470/480 SERIES A/D CONVERTER APPLICATION NOTE A/D CONVERTER Chapter 0 Revision History Revision History Date 2008-03-28 2008-09-29 Issue CHa: First draft, partly based on 16FX ADC application note by MWi

Fujitsu IR c code

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-13107-4E Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

FUJITSU FRAM

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13107-5E Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

MB39C326

Abstract: GSM 3g repeater circuit DS405 BGA20-2
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS405-00001-0v02-E ASSP for Power Supply Applications 6MHz Synchronous Rectification Buck-Boost DC/DC Converter IC MB39C326 „ DESCRIPTION The MB39C326 is a high efficiency, low noise synchronous, Buck-boost DC/DC converter designed for