ASI3 Search Results

Power Diode 818

Abstract: ma4e928 "Advanced Semiconductor, Inc" ADVANCED SEMICONDUCTOR ASI3486 HSCH3486
Contextual Info: ASI3486 ZERO BIAS SCHOTTKY DIODE DESCRIPTION: The ASI 3486 is a Silicon Schottky Barrier Diode Designed for High Sensitivity Zero Bias Detector Applications up to 10 GHz. PACKAGE STYLE 01 FEATURES INCLUDE: • Replacement for HSCH3486 and MA4E928series • -56 dBm TSS Typical @ 10 GHz

ASI10538

Abstract: ASI3001
Contextual Info: ASI3001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 3001 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 7 dB min. at 1.0 W / 3,000 MHz

ASI3005

Abstract: ASI10540
Contextual Info: ASI3005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 4.5 dB min. at 5 W / 3,000 MHz • Hermetic Microstrip Package

ASI3003

Abstract: in 3003 TRANSISTOR ASI10539 transistor m 3003 g
Contextual Info: ASI3003 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 3003 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 5 dB min. at 3 W / 3,000 MHz

ASI301Q

Contextual Info: Mallory Sonalert Products Inc. Sales Outline Drawing Part # ASI301Q Revision C Specifications: Resonant Frequency Hz Operating Voltage (Vdc) Rated Voltage (Vdc) Current Consumption Max. (mA) Sound Pressure Level Min. (dB) Tone/Pulse Rate Operating Temperature (°C)

mallory date code

Abstract: ASI301Q
Contextual Info: Mallory Sonalert Products Inc. Sales Outline Drawing Part # ASI301Q Revision D Specifications: Resonant Frequency Hz Operating Voltage (Vdc) Rated Voltage (Vdc) Current Consumption Max. (mA) Sound Pressure Level Min. (dB) Tone/Pulse Rate Operating Temperature (°C)

Contextual Info: Surface Mount Electromagnetic Surface Mount Indicators with Circuitry Part Number ASI301Q ASI301TRQ ASI401Q ASI401TRQ Operating Current LxWxH Voltage (mA) (mm) (Vdc) Electromagnetic Indicator- Continuous Tone 90 @ 5Vdc 2400 4-7 30 12.6 x 12.6 x 10 90 @ 5Vdc

ma4e928

Abstract: ASI3486 10 GHz pin diode HSCH3486 color code diode HSCH-3486
Contextual Info: ASI3486 ZERO BIAS SCHOTTKY DIODE DESCRIPTION: The ASI 3486 is a Silicon Schottky Barrier Diode Designed for High Sensitivity Zero Bias Detector Applications up to 10 GHz. PACKAGE STYLE 01 FEATURES INCLUDE: • Replacement for HSCH3486 and MA4E928 series • -56 dBm TSS Typical @ 10 GHz

Contextual Info: Part # Mallory Sonalert Products Inc. Sales Outline Drawing Revision ASI301TRQ E Specifications: Oscillation Frequency Hz Operating Voltage (Vdc) Rated Voltage (Vdc) Current Consumption Max. (mA) Sound Pressure Level Min. (dB) Tone/Pulse Rate Operating Temperature (°C)

ASI10539

Abstract: ASI3003 147 B transistor
Contextual Info: ASI3003 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 3003 is a common base transistor capable of providing 3.0 W Class-C RF output power @ 3.0 GHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 6.0 dB min. at 3 W / 3,000 MHz

Contextual Info: ASI3486 ZERO BIAS SCHOTTKY DIODE DESCRIPTION: The AS I3486 is a Silicon Schottky Barrier Diode Designed for High Sensitivity Zero Bias Detector Applications up to 10 GHz. FEATURES INCLUDE: • Replacement for HP H S C H 3486 • -56 dBm TssTypical @ 10 G Hz

ASI3000

Abstract: ASI10537
Contextual Info: ASI3000 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 3000 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 7.0 dB min. at 0.5 W/3,000 MHz

mallory date code

Abstract: Mallory ASI301 smd 28
Contextual Info: Mallory Sonalert Products Inc. Sales Outline Drawing Specifications: ASI301 Revision B Part # OBSOLETE- USE ASI301Q Resonant Frequency Hz Operating Voltage (Vdc) Rated Voltage (Vdc) Current Consumption Max. (mA) Sound Pressure Level Min. (dB) Tone/Pulse Rate

Contextual Info: Mallory Sonalert Products Inc. Sales Outline Drawing Part # Revision ASI301TRQ B Specifications: Oscillation Frequency Hz Operating Voltage (Vdc) Rated Voltage (Vdc) Current Consumption Max. (mA) Sound Pressure Level Min. (dB) Tone/Pulse Rate Operating Temperature (°C)

ASI10538

Abstract: ASI3001
Contextual Info: ASI3001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 3001 is a common base transistor capable of providing 1 W Class-C RF output power @ 3000 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 8.5 dB typ. at 1.0 W / 3,000 MHz

Contextual Info: Mallory Sonalert Products Inc. Sales Outline Drawing Part # Revision ASI301TRQ E Specifications: Oscillation Frequency Hz Operating Voltage (Vdc) Rated Voltage (Vdc) Current Consumption Max. (mA) Sound Pressure Level Min. (dB) Tone/Pulse Rate Operating Temperature (°C)

Contextual Info: Mallory Sonalert Products Inc. Sales Outline Drawing Part # ASI301Q Revision B Specifications: Resonant Frequency Hz Operating Voltage (Vdc) Rated Voltage (Vdc) Current Consumption Max. (mA) Sound Pressure Level Min. (dB) Tone/Pulse Rate Operating Temperature (°C)

ASI10537

Abstract: ASI3000
Contextual Info: ASI3000 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 3000 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 7 dB min. at 0.5 W / 3,000 MHz

Contextual Info: Mallory Sonalert Products Inc. Sales Outline Drawing Part # ASI301Q Revision D Specifications: Resonant Frequency Hz Operating Voltage (Vdc) Rated Voltage (Vdc) Current Consumption Max. (mA) Sound Pressure Level Min. (dB) Tone/Pulse Rate Operating Temperature (°C)

ASI3001

Abstract: ASI10538
Contextual Info: ASI3001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 3001 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 7 dB min. at 1.0 W / 3,000 MHz

in 3003 TRANSISTOR

Abstract: ASI10539 ASI3003
Contextual Info: ASI3003 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 3003 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 5 dB min. at 3 W / 3,000 MHz

Contextual Info: Mallory Sonalert Products Inc. Sales Outline Drawing Part # ASI301Q Revision D Specifications: Resonant Frequency Hz Operating Voltage (Vdc) Rated Voltage (Vdc) Current Consumption Max. (mA) Sound Pressure Level Min. (dB) Tone/Pulse Rate Operating Temperature (°C)

Contextual Info: TLV320AIC3262 SLAS679 – DECEMBER 2011 www.ti.com Ultra Low Power Stereo Audio Codec With miniDSP, DirectPath Headphone, and Stereo Class-D Speaker Amplifier FEATURES • 1 • • • • • • SE Line-Ins Microphone Analog or Digital • • • •

Contextual Info: ASSP CMOS SPARCIite Series 32-Bit RISC Embedded Processor MB86831 Package • 176-pin, Plastic SQFP • FPT-176P-M01 Features 66 or 80 MHz CPU with on-chip clock multiplier Bus interface support for 8-, 16-, or 32-bit wide memory SPARC high performance RISC architecture