diode smd ED 84
Abstract: smd transistor NG
Contextual Info: FSYC9260D, FSYC9260R Semiconductor August 1998 Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs File Number 4569 Features • 2 8 A , -200V , rQg ONi = 0.130J2 T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r • Total D ose
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fsyc9260dfsyc9260r1-800-4-harrdiode smd ed 84+1smd transistor ng
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Contextual Info: FSYC9260D, FSYC9260R f ü H A R R IS S E M I C O N D U C T O R August 1998 Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs File Number 4569 Features • 28A, -200V, ro g o i\| = 0 .1 30Q T he D iscrete P roducts O pe ra tion of H arris S e m icon ducto r
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1E14
Abstract: 2E12 FSYC9260D FSYC9260D1 FSYC9260D3 FSYC9260R FSYC9260R1
Contextual Info: FSYC9260D, FSYC9260R August 1998 File Number Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs Features The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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fsyc9260dfsyc9260r-200v1e14+42e12fsyc9260d1fsyc9260d3fsyc9260r1
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1E14
Abstract: 2E12 FSYC9260D FSYC9260D1 FSYC9260D3 FSYC9260R FSYC9260R1
Contextual Info: FSYC9260D, FSYC9260R August 1998 Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs File Number 4569 Features • 28A, -200V, rDS ON = 0.130Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically
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fsyc9260dfsyc9260r-200v1e14+42e12fsyc9260d1fsyc9260d3fsyc9260r1
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1E14
Abstract: 2E12 FSYC9260D FSYC9260D1 FSYC9260D3 FSYC9260R FSYC9260R1 Rad Hard in Fairchild for MOSFET
Contextual Info: FSYC9260D, FSYC9260R December 2001 Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs Features The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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fsyc9260dfsyc9260r-200v1e14+52e12fsyc9260d1fsyc9260d3fsyc9260r1rad hard in fairchild for mosfet
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