FST60 Search Results

FST6080

Abstract: FST60100 FST6090
Contextual Info: Schottky Powermod FST6080 0 o FST60100 o 1 2 3 Common Cathode rKhrOH 1 2 3 A=Common Anode I i L_ t 1 J H II. rWrWi j 1 2 3 D=Doubler » II Notes: Baseplate: Nickel plated copper; electrically isolated Pins: Nickel plated copper M icrosem i C atalog N um ber

FST60100

Abstract: FST6080 FST6090
Contextual Info: Schottky Powermod FST6080 - FST60100 H>M<h 1 2 3 Common Cathode rKhrl>h 1 2 3 A=Common Anode - F H I I l G "" ^ II. rWrOH J 1 1 1 M— 1 2 3 D=Doubler Notes: Baseplate: Nickel plated copper; electrically isolated Pins: Nickel plated copper

Contextual Info: FST6035 Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current60 @Temp (øC) (Test Condition)135# V(RRM)(V) Rep.Pk.Rev. Voltage35 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.2k¥ V(FM) Max.(V) Forward Voltage700m @I(FM) (A) (Test Condition)60

FST60100

Abstract: FST6080 FST6090
Contextual Info: Schottky Powermod FST6080 - m m m 1 2 3 Common Cathode 1 2 3 A=Common Anode 1 2 3 D=Doubler Notes: Baseplate: Nickel plated copper; electrically isolated Pins: Nickel plated copper M— I Microsemi Catalog Number Working Peak Reverse Voltage FST6080* FST6090*

FST6050

Abstract: FST6035 FST6040 FST6045
Contextual Info: Schottky Powermod FST6035 - FST6050 N 4-PLCS. A 1 2 3 Common Cathode C E 1 2 3 L P K 1.200 9 Pins eq at .150 F G H 1 2 3 A=Common Anode J 1 2 3 D=Doubler Notes: Baseplate: Nickel plated copper; electrically isolated Pins: Nickel plated copper M Microsemi Catalog Number

FST6035

Abstract: FST6040 FST6045 FST6050
Contextual Info: Schottky Powermod FST 60 P Millimeter Dim. Inches Minimum Maximum minimum Maximum Notes A C E F G H J K L M N P Microsemi Catalog Number Working Peak Reverse Voltage FST6035* FST6040* FST6045» FST6050* 35V 40V 45V 50V 1.995 0.495 0.990 2.390 1.4-90 0.120

Contextual Info: Schottky Powermod FST6080 - FST60100 N 4-PLCS. A Dim. Inches 1 2 3 Common Cathode C E 1 2 3 L P 1.200 9 Pins eq at .150 F G H K 1 2 3 A=Common Anode J 1 2 3 D=Doubler Notes: Baseplate: Nickel plated copper; electrically isolated Pins: Nickel plated copper

Contextual Info: FST6040A Diodes Center-Tapped Negative CA Schottky Rectifier I O Max.(A) Output Current60 @Temp (øC) (Test Condition)135# V(RRM)(V) Rep.Pk.Rev. Voltage40 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.2k¥ V(FM) Max.(V) Forward Voltage700m @I(FM) (A) (Test Condition)60

BYS98-50

Abstract: BYS98-40 BYS98-35 BYS98-45 FST6035 FST6040 FST6045 FST6050
Contextual Info: COORS COMPONENTS I - INC 02 Schottky PowerMod Ï E I aM3DDDb . 820 00 1 3 7 D FST60 03- X - Electrically Isolated Base Guard ring reverse protection Center Tap 50 Volts VRRMI VpvjU 60 Amperes 175°C Junction Temperature Dim. Inches A C E F

Contextual Info: FST6050 Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current60 @Temp (øC) (Test Condition)135# V(RRM)(V) Rep.Pk.Rev. Voltage50 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.2k¥ V(FM) Max.(V) Forward Voltage700m @I(FM) (A) (Test Condition)60

FST6035

Abstract: FST6040 FST6045 FST6050 660T
Contextual Info: Scho ttky Powermod FST6035 m FST6050 N 4-PLCS. 1 2 3 Common Cathode Y m r j , 200 9 Pins eq a t .150 H - F |— G- K II. 1 2 3 A=Common Anode m J 1 I I— ♦ 1 2 3 D=Doubler J Notes: Baseplate: Nickel plated copper; electrically isolated

FST6035

Abstract: FST6040 FST6045 FST6050
Contextual Info: Schottky Powermod FST6035 - FST6050 rl>hH <h o o 1 2 3 Common Cathode rK brt>h o o 1 2 3 A=Common Anode G ~ i 1 1 2 3 D=Doubler h . i I MJ |_ Notes: Baseplate: Nickel plated copper; electrically isolated Pins: Nickel plated copper t M icrosemi

Contextual Info: FST6040 Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current60 @Temp (øC) (Test Condition)135# V(RRM)(V) Rep.Pk.Rev. Voltage40 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.2k¥ V(FM) Max.(V) Forward Voltage700m @I(FM) (A) (Test Condition)60

FST60100

Abstract: FST6080 FST6090
Contextual Info: Schottky Powermod FST6080 - FST60100 N 4-PLCS. A Dim. Inches 1 2 3 Common Cathode C E 1 2 3 L P 1.200 9 Pins eq at .150 F G H K 1 2 3 A=Common Anode J 1 2 3 D=Doubler Notes: Baseplate: Nickel plated copper; electrically isolated Pins: Nickel plated copper

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
Contextual Info: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.

scr 8a 200v

Abstract: do213ab 50A 1200V SCR 5A 200V SCR die SCR 30A 100V USD635C 1n4436 US60A eh12a 1N1183
Contextual Info: Product Guide Power Semiconductors Microsemi more than solutions - enabling possibilities R TM Microsemi Power Semiconductors Contents Selection Military Qualified

MBR140P

Abstract: 1N5819 SS14 1N5822 SS34 mbr370 MBR170 1N5822 ss24 motorola SB5100 CROSS REFERENCE LIST MBR30050CT MBR180
Contextual Info: Schottky Cross Reference List FAIRCHILD SEMI 1N5818 1N5819 1N5822 BAT54 BAT54A BAT54C BAT54S FMKA140 FMKA140 FYP1504DN FYP2004DN FYP2006DN MBR1035 MBR1045 MBR1535CT MBR1545CT MBR1635 MBR1645 MBR2035CT MBR2045CT MBR2060CT MBR2535CT MBR2545CT MBR3035PT MBR3045PT

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection