FSS1 Search Results

Contextual Info: TENTATIVE DATA SHEET FSS12W.FSS120W 1.0 Amp. Surface Mount Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 200V FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency

Contextual Info: JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

transistors ai 585

Contextual Info: FSS130D, FSS130R S em iconductor 11 A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description . 11 A, 100V, rDS 0 N = 0.210£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: j Ordering number : ENN7019 P-Channel Silicon MOSFET FSS139 IS A ß ro i Load Switching Applications Package Dimensions Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. u n it: mm 2116 [FSS139] MM □ □ 1 □ 1 : Source 2 : Source

MOSFET MARK H1

Abstract: 2E12 FSS130R4 JANSR2N7399 T0-257AA Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 99 /Subject (11A, 100V, 0.210 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines

Contextual Info: FSS12L.FSS115L 1.0 Amp. Surface Mount Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 150 V DO-219AA / M1F FEATURES • Low profile package • Ideal for automated placement • Low power losses, high efficiency • High surge current capability

marking s104

Abstract: s104 diode S104 FSS104
Contextual Info: Ordering number:ENN5991A P-Channel Silicon MOSFET FSS104 DC/DC Converter Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [FSS104] 5 4 0.595 Specifications 1.27 0.43 0.1 1.5 5.0 1 : Source

Contextual Info: FSS12W.FSS120W 1.0 Amp. Surface Mount Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 200V FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop

schottky diode 100A

Abstract: DO214 rectifier 50a Schottky Diode 50V 3A 50a rectifier circuit 50A schottky rectifier DO214-AB transistor 100a Schottky rectifier 3A 60v diode DO214
Contextual Info: QUICK GUIDE Schottky Rectifier SCHOTTKY RECTIFIERS (SURFACE MOUNTED DEVICES) IF IFSM 20V 30V 40V 50V 60V FSS1 1A 40A FSS12 FSS13 FSS14 FSS15* FSS16* 0.50V 0.75V* DO214-AC FSS2 2A 50A FSS22 FSS23 FSS24 FSS25* FSS26* 0.50V 0.70V* DO214-AA FSS3 3A 100A FSS32

Contextual Info: h a r S E M I C O N D U C T O R FSS130D, FSS130R " Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 11 A, 100V, rDS ON = 0.210£i TO-257AA • Total Dose Meets Pre-Rad Specifications to 100K RAD (Si) • Single Event

4431 mosfet

Contextual Info: S JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 11A,100V,rDS ON = 0.21012 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

IT10765

Abstract: FSS162 IT10767
Contextual Info: FSS162 Ordering number : ENA0348 SANYO Semiconductors DATA SHEET FSS162 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol

FSS172

Abstract: S172
Contextual Info: FSS172 Ordering number : EN8286A SANYO Semiconductors DATA SHEET FSS172 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C

is s106 diode

Abstract: FSS106 S106
Contextual Info: Ordering number:ENN6476 P-Channel Silicon MOSFET FSS106 DC/DC Converter Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [FSS106] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27

FSS14L

Abstract: fss16
Contextual Info: FSS12L.FSS115L 1.0 Amp. Surface Mounted Glass Passivated Schottky Barrier Rectifier Dimensions in mm. Voltage 20 to 150 V CASE: M1F DO219AA Current 1.0 A R • For surface mounted application • Low profile package • Ideal for automated pick & place

SOD123W PACKAGE

Abstract: fss14w
Contextual Info: TENTATIVE DATA SHEET FSS12W.FSS120W 1.0 Amp. Surface Mount Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 200V FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency

FSS14

Contextual Info: FSS12L.FSS115L 1.0 Amp. Surface Mount Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 150 V DO-219AA M1F FEATURES • Low profile package • Ideal for automated placement • Low power losses, high efficiency • High surge current capability

2E12

Abstract: FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1
Contextual Info: FSS13A0D, FSS13A0R TM Data Sheet 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

2E12

Abstract: FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1 Rad Hard in Fairchild for MOSFET
Contextual Info: FSS13A0D, FSS13A0R Data Sheet 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

2E12

Abstract: FSS130D FSS130D1 FSS130D3 FSS130R FSS130R1 FSS130R3 Rad Hard in Fairchild for MOSFET
Contextual Info: FSS130D, FSS130R 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically

FSS108

Abstract: S108 TA7560
Contextual Info: Ordering number:ENN5935A P-Channel Silicon MOSFET FSS108 DC/DC Converter Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [FSS108] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27

FSS174

Abstract: S174
Contextual Info: FSS174 注文コード No. N 8 7 3 8 三洋半導体データシート N FSS174 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。

A03414

Abstract: A0341 A03413 FSS145 A0341-3
Contextual Info: FSS145 注文コード No. N A 0 3 4 1 三洋半導体データシート N FSS145 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ロードスイッチ用。 ・低オン抵抗。 ・4V 駆動。

marking S132

Abstract: FSS132 S132 TA2720
Contextual Info: Ordering number:ENN6398 P-Channel Silicon MOSFET FSS132 Load Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [FSS132] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27