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FSJ9260D3 Datasheets (2)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FSJ9260D3		Fairchild Semiconductor	27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFET	Original	PDF	89.16KB	10
FSJ9260D3		Intersil	27A, -200V, 0.130 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs	Original	PDF	47.7KB	8

FSJ9260D3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Rad Hard in Fairchild for MOSFET Contextual Info: FSJ9260D, FSJ9260R 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 27A, -200V, rDS ON = 0.130Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs	Original	fsj9260d fsj9260r -200v rad hard in fairchild for mosfet	PDF
1E14 Abstract: 2E12 FSJ9260D FSJ9260D1 FSJ9260D3 FSJ9260R FSJ9260R1 Rad Hard in Fairchild for MOSFET Contextual Info: FSJ9260D, FSJ9260R 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 27A, -200V, rDS ON = 0.130Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event	Original	fsj9260d fsj9260r -200v 1e14 +52e12 fsj9260d1 fsj9260d3 fsj9260r1 rad hard in fairchild for mosfet	PDF
Contextual Info: 33 M S FSJ9260D, FSJ9260R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs February 1998 Description Features • Z7A, -200V, r D S O N The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	OCR Scan	fsj9260d fsj9260r -200v 36mev/m +11-800-4-harris	PDF
SM81A Contextual Info: FSJ9260D, FSJ9260R 33 HARRIS SEMICONDUCTOR 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 27A, -200V, rDS ON = 0.13012 The Discrete Products Operation ot Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	OCR Scan	fsj9260d fsj9260r -200v mil-std-750 +4mil-s-19500 100ms 500ms sm81a	PDF
Contextual Info: S E M I C O N D U C T O R FSJ9260D, FSJ9260R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs February 1998 Features Description • 27A, -200V, rDS ON = 0.130Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	Original	fsj9260d fsj9260r 1-800-4-harris	PDF
Contextual Info: FSJ9260D, FSJ9260R 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description . 27A, -200V, rDS 0 N = 0.130£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	OCR Scan	fsj9260d fsj9260r -200v varietyto-254aa +1mil-s-19500	PDF
MIL-S-19500 Abstract: 1E14 2E12 FSJ9260D FSJ9260D1 FSJ9260D3 FSJ9260R FSJ9260R1 Contextual Info: FSJ9260D, FSJ9260R 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 27A, -200V, rDS ON = 0.130Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event	Original	fsj9260d fsj9260r -200v mil-s-19500 +51e14 2e12 fsj9260d1 fsj9260d3 fsj9260r1	PDF