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Contextual Info: PS-S100 Series Specifications SAVER ENERGY ENERGY SAVER OUTPUT OUTPUT Features: • Universal AC input / full range • Protections: Short Circuit / Overload / Overvoltage / Over temperature • ZCS/ZVS technology to reduce power dissipation • Cooling by free air convection

Contextual Info: PSW-120 Series Features: Specifications SAVER ENERGY ENERGY SAVER OUTPUT OUTPUT • Single and two phase wide input range 180 ~ 550VAC • Protections: Short Circuit / Overload / Over Voltage / Overtemperature • Cooling by free air convection • Built-in constant current limiting circuit

13005

Abstract: 13005R
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CDL13005R NPN PLASTIC POWER TRANSISTOR TO-220 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" Used in Energy Saving Lights and Power Switch Circuits

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CDL13005R NPN PLASTIC POWER TRANSISTOR TO-220 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" Used in Energy Saving Lights and Power Switch Circuits

APT94N65B2C3

Abstract: APT94N65B2C3G APT94N65B2
Contextual Info: 650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Super Junction MOSFET Power Semiconductors T-MaxTM • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D

Contextual Info: 650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Super Junction MOSFET Power Semiconductors T-MaxTM • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extremedv/dt Rated

75DQ60

Contextual Info: 650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Super Junction MOSFET Power Semiconductors T-MaxTM • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated

Contextual Info: 650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal COOLMOS Super Junction MOSFET Power Semiconductors T-MaxTM • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated

Contextual Info: 600V 94A APT94N60L2C3 APT94N60L2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET • Ultra Low RDS ON TO-264 • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extremedv/dt Rated D • Dual die (parallel)

diode 748 36A

Abstract: APT36N90BC3G apt30df60
Contextual Info: 900V 36A APT36N90BC3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Super Junction MOSFET Power Semiconductors TO -24 7 D3 • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated

Contextual Info: APT34N80B2C3 G APT34N80LC3(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. 800V 34A 0.145Ω Super Junction MOSFET T-MAX COOLMOS TO-264 Power Semiconductors • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated

Contextual Info: 900V 36A APT36N90BC3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Super Junction MOSFET Power Semiconductors TO -24 7 D3 • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated

Contextual Info: 900V 36A APT36N90BC3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET TO -24 7 D3 • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extremedv/dt Rated • Dual die (parallel)

dt600A

Contextual Info: 900V 36A APT36N90BC3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET TO -24 7 D3 • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated • Dual die (parallel)

mil std 810f method 514.5 procedure 1

Abstract: CN104 267E
Contextual Info: GE Energy Preliminary Data Sheet 3A Digital Pico DLynxTM: Non-Isolated DC-DC Power Modules 3Vdc –14.4Vdc input; 0.45Vdc to 5.5Vdc output; 3A Output Current Features • Compliant to RoHS EU Directive 2002/95/EC Z versions • Compatible in a Pb-free or SnPb reflow environment (Z

APXW005A0X3-SRZ

Abstract: apxw005 non-isolated synchronous step down variable 12 V
Contextual Info: GE Energy Data Sheet 9-36V ProLynxTM 5A: Non-Isolated DC-DC Power Modules 9Vdc –36Vdc input; 3Vdc to 18Vdc output; 5A to 2.5A Output Current Features RoHS Compliant Applications • Compliant to RoHS EU Directive 2002/95/EC Z versions • Compatible in a Pb-free or SnPb reflow environment (Z

mosfet SOA testing

Abstract: AN9409 RFP70N06 RFD3055 mosfet transistor checking and testing 407 transistor
Contextual Info: Safe Operating Area Testing Without A Heat Sink Application Note Introduction Most manufacturers of PowerMOS transistors specify the Safe Operating Area for their devices at 25oC case temperature and derate them linearly to zero at the maximum rated junction temperature. The circuits to maintain a fixed current

mosfet SOA testing

Abstract: AN-7516 RFD3055 RFP70N06 TO-251 fairchild
Contextual Info: Safe Operating Area Testing Without A Heat Sink Application Note Introduction Title N75 ubct AFE PERTING REA ESTG ITHUT EAT NK) utho ) eyords reor ) OC FO fark ageode seute OCEW fark Most manufacturers of PowerMOS transistors specify the Safe Operating Area for their devices at 25oC case temperature and derate them linearly to zero at the maximum rated

mosfet SOA testing

Abstract: AN-7516 RFD3055 RFP70N06 TO-251 fairchild
Contextual Info: Safe Operating Area Testing Without A Heat Sink Application Note Introduction Title N94 bt AFE ERING REA STG THUT AT NK utho eyrds er ) OCI O frk geode setes OCEW frk Most manufacturers of PowerMOS transistors specify the Safe Operating Area for their devices at 25oC case temperature and derate them linearly to zero at the maximum rated

10N10EL

Abstract: 10EL fet 10n 10el 10N10E
Contextual Info: MTD10N10EL TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time.

10n10el

Abstract: 10N10 AN569 MTD10N10EL MTD10N10ELT4 MTD10N10ELT4G dpak 369C
Contextual Info: MTD10N10EL TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate http://onsemi.com This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient

MTP6N6

Abstract: MTP6N60E equivalent MTP6N60E AN569 mtp6n mosfet transistor 400 volts.100 amperes
Contextual Info: TMOS E-FET. Power Field Effect Transistor MTP6N60E ON Semiconductor Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading

G15N60

Abstract: G15N60S1G NGTG15N60 NGTB15N60S1
Contextual Info: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss. The

ferrite n27

Abstract: bipolar transistor tester germanium transistors NPN AN1628 GaAs tunnel diode germanium transistor pnp pnp germanium low power transistor POWER TRANSISTOR Cross AN-1628 Understanding Power Transistors Breakdown Parameters
Contextual Info: AN1628/D Understanding Power Transistors Breakdown Parameters Prepared by: Michaël Bairanzade http://onsemi.com APPLICATION NOTE TUNNELING EFFECT When the electrical field approaches 106 V/cm in Silicon, a significant current begins to flow by means of the band to