FQI4N80 Search Results
FQI4N80 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FQI4N80 | Fairchild Semiconductor | 800 V N-Channel MOSFET | Original | 673.94KB | 9 | ||
| FQI4N80TU | Fairchild Semiconductor | 800V N-Channel QFET | Original | 673.93KB | 9 |
FQI4N80 Price and Stock
onsemi FQI4N80TUTransistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQI4N80TU | 1 |
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FQI4N80TU | Tube | 1,000 |
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Get Quote | ||||||
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FQI4N80TU | 3,000 |
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FAIRCHILD FQI4N80TUTrans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) I2PAK Rail |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQI4N80TU | 846 | 320 |
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| FQI4N80TU | 504 | 320 |
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Fairchild Semiconductor Corporation FQI4N80TUMOSFET N-Channel 800V 3.9A (Tc) TO262 Tube |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQI4N80TU | 1,650 | 1 |
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Buy Now | ||||||
FQI4N80 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FQB4N80 / FQI4N80 September 2000 QFET TM FQB4N80 / FQI4N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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fqb4n80fqi4n80fqi4n80tuo-262 | |
FQB4N80
Abstract: FQI4N80
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fqb4n80Contextual Info: FQB4N80 / FQI4N80 October 2008 QFET FQB4N80 / FQI4N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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Contextual Info: FQB4N80 / FQI4N80 N-Channel QFET MOSFET 800 V, 3.9 A, 3.6 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to |
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Contextual Info: FQB4N80 / FQI4N80 September 2000 QFET TM FQB4N80 / FQI4N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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fqb4n80fqi4n80fqb4n80tmo-263 | |
FQB4N80
Abstract: FQI4N80
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Contextual Info: QFET FQB4N80 / FQI4N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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Contextual Info: FQB4N80 / FQI4N80 N-Channel QFET MOSFET 800 V, 3.9 A, 3.6 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce |
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thermistor KSD201
Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
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thermistor ksd201irf power mosfets catalogcomplementary mosfets buz11bzx85c6v8 spice model+6 | |
FLMP SuperSOT-6
Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
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sc70-6sc75-6supersottm-3/sot-23power247tm+10 | |
FQPF*7N65C APPLICATIONS
Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
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uf4003uf4004uf4005uf4006+16 | |
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
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5ke100a5ke100ca5ke10a5ke10ca+16 | |
SSI5N60A
Abstract: FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3
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o-262isl9n303as3huf75345s3huf75333s3+8 | |
SSP6N60A
Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
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thermistor KSD201
Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
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ts-16949iso-14001thermistor ksd201pin configuration npn transistor bc548+8 | |
FQPf10N60C
Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
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fdz201nfdz209nfdz2553nfdz2553nz+16 | |