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    FQD3N50CTF Search Results

    FQD3N50CTF Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FQD3N50CTF
    		Fairchild Semiconductor 500V N-Channel MOSFET Original PDF 1.06MB 9
    FQD3N50CTF
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 2.5A DPAK Original PDF 8
    FQD3N50CTF_NL
    		Fairchild Semiconductor 500V N-Channel Advanced QFET C-series Original PDF 823.51KB 9
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    FQD3N50CTF Price and Stock

    onsemi

    onsemi FQD3N50CTF

    MOSFET N-CH 500V 2.5A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQD3N50CTF Reel 2,000
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    FQD3N50CTF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FQD3N50C

    Abstract: FQD3N50CTF FQD3N50CTM FQU3N50C FQU3N50CTU
    Contextual Info: QFET FQD3N50C / FQU3N50C 500V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQD3N50C FQU3N50C FQU3N50C FQD3N50CTF FQD3N50CTM FQU3N50CTU PDF

    3n50c

    Contextual Info: FQD3N50C/FQU3N50C 500V N-Channel MOSFET Features Description • 2.5 A, 500 V, RDS on = 2.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 10 nC )


    Original     		FQD3N50C/FQU3N50C FQD3N50C/FQU3N50C FQU3N50C FQU3N50CTU 3n50c PDF

    fqd3n50c

    Contextual Info: N-Channel QFET MOSFET 500 V, 2.5 A, 2.5 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		FQD3N50C FQU3N50C FQU3N50C PDF

    FQD3N50C

    Abstract: FQD3N50CTF FQD3N50CTM FQU3N50C
    Contextual Info: FQD3N50C/FQU3N50C 500V N-Channel MOSFET Features Description • 2.5 A, 500 V, RDS on = 2.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 10 nC )


    Original     		FQD3N50C/FQU3N50C FQD3N50C/FQU3N50C FQD3N50C FQD3N50CTF FQD3N50CTM FQU3N50C PDF