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    FQD3N50CTM Search Results

    FQD3N50CTM Datasheets (5)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FQD3N50CTM
    		Fairchild Semiconductor 500V N-Channel MOSFET Original PDF 1.06MB 9
    FQD3N50CTM
    		Fairchild Semiconductor 500V N-Channel MOSFET Original PDF 823.51KB 9
    FQD3N50CTM
    		Fairchild Semiconductor 500V N-Channel MOSFET Original PDF 823.51KB 9
    FQD3N50CTM
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 2.5A DPAK Original PDF 8
    FQD3N50CTM_NL
    		Fairchild Semiconductor 500V N-Channel Advanced QFET C-series Original PDF 823.51KB 9
    SF Impression Pixel

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    onsemi FQD3N50CTM

    MOSFET N-CH 500V 2.5A DPAK
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    DigiKey FQD3N50CTM Reel
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    Avnet Americas FQD3N50CTM Reel 2,500
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    Fairchild Semiconductor Corporation FQD3N50CTM

    Electronic Component
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    ComSIT USA FQD3N50CTM 129,424
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    FQD3N50CTM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FQD3N50C

    Abstract: FQD3N50CTF FQD3N50CTM FQU3N50C FQU3N50CTU
    Contextual Info: QFET FQD3N50C / FQU3N50C 500V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQD3N50C FQU3N50C FQU3N50C FQD3N50CTF FQD3N50CTM FQU3N50CTU PDF

    3n50c

    Contextual Info: FQD3N50C/FQU3N50C 500V N-Channel MOSFET Features Description • 2.5 A, 500 V, RDS on = 2.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 10 nC )


    Original     		FQD3N50C/FQU3N50C FQD3N50C/FQU3N50C FQU3N50C FQU3N50CTU 3n50c PDF

    fqd3n50c

    Contextual Info: N-Channel QFET MOSFET 500 V, 2.5 A, 2.5 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		FQD3N50C FQU3N50C FQU3N50C PDF

    FQD3N50C

    Abstract: FQD3N50CTF FQD3N50CTM FQU3N50C
    Contextual Info: FQD3N50C/FQU3N50C 500V N-Channel MOSFET Features Description • 2.5 A, 500 V, RDS on = 2.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 10 nC )


    Original     		FQD3N50C/FQU3N50C FQD3N50C/FQU3N50C FQD3N50C FQD3N50CTF FQD3N50CTM FQU3N50C PDF

    DAP02ALSZ

    Abstract: fan7320 FAN7320b DAP02A LTA504SG FTBVP5SH50 dap02AL FSQ210 FODB103 FQP9N50C
    Contextual Info: Fairchild Disc. P/N 2SC3503FSTU 3885_BC637 6285_BC560C 74LVT16244MTD 74LVT16244MTDX 74LVT16245MTD 74LVT16245MTDX 74LVTH162245MTD 74LVTH162245MTX 74LVTH16244MTD 74LVTH16244MTDX 74LVTH16245MTD 74LVTH16245MTDX 74LVTH16373MTD 74LVTH16373MTDX 74LVTH16374MTD 74LVTH16374MTDX


    Original     		2SC3503FSTU BC637 BC560C 74LVT16244MTD 74LVT16244MTDX 74LVT16245MTD 74LVT16245MTDX 74LVTH162245MTD 74LVTH162245MTX 74LVTH16244MTD DAP02ALSZ fan7320 FAN7320b DAP02A LTA504SG FTBVP5SH50 dap02AL FSQ210 FODB103 FQP9N50C PDF