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    3N50C Search Results

    3N50C Datasheets (1)

    Maplesemi
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge SLF13N50C
    		Maplesemi SLP13N50C and SLF13N50C are 500V, 13A N-channel MOSFETs with a typical RDS(on) of 386 mΩ at VGS = 10V, low gate charge of 44nC, and high avalanche energy endurance, suitable for high-efficiency power conversion applications. Original PDF
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    3N50C Price and Stock

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    Rochester Electronics LLC SPD03N50C3ATMA1

    POWER FIELD-EFFECT TRANSISTOR, 3
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    DigiKey SPD03N50C3ATMA1 Bulk 187,350 360
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    Rochester Electronics LLC FQPF3N50C

    MOSFET N-CH 500V 3A TO220F
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    DigiKey FQPF3N50C Tube 20,381 271
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    Rochester Electronics LLC FQI13N50CTU

    POWER FIELD-EFFECT TRANSISTOR, 1
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    DigiKey FQI13N50CTU Bulk 14,185 211
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    Rochester Electronics LLC FQA13N50C

    MOSFET N-CH 500V 13.5A TO3P
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    DigiKey FQA13N50C Tube 8,252 117
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    FLIP ELECTRONICS FQP3N50C-F080

    N-CHANNEL 500 V 1.8A (TC) 62W (T
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    DigiKey FQP3N50C-F080 Tube 8,000 1,000
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    3N50C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    3n50c

    Contextual Info: 3N50C/3N50C 500V N-Channel MOSFET Features Description • 2.5 A, 500 V, RDS on = 2.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 10 nC )


    Original     		FQD3N50C/FQU3N50C FQD3N50C/FQU3N50C FQU3N50C FQU3N50CTU 3n50c PDF