MPS-A42
Abstract: transistor TO-92 bc108 BC237 MMBF170LT1 Series 2N2222 WITH PIN NUMBER OF transistor 2N2222 to-92
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a cost–effective plastic package for economical, high–volume consumer and industrial
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mmbv3700lt1mpn3700msc1621t1msc2404+12msd1819amv1620mv1624mv1636mv1640mv1642mps-a42transistor to-92 bc108bc237mmbf170lt1 series2n2222 with pin numberof transistor 2n2222 to-92
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BC107B
Abstract: BC107 DATASHEET Transistor BC107 free download transistor(BC107) data sheet Transistor BC107 BC107 characteristic equivalent component of transistor BC107 transistor bc107b for BC107B equivalent components for transistor BC107
Contextual Info: BC107 BC107B LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC107 and BC107B are silicon Planar Epitaxial NPN transistors in TO-18 metal case. They are suitable for use in driver stages, low noise input stages and signal processing circuits
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bc107bc107bbc177bc177b+8datasheet transistor bc107free download transistor(bc107) data sheettransistor bc107bc107 characteristicequivalent component of transistor bc107transistor bc107bfor bc107bequivalent components for transistor bc107
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MPN3404 equivalent
Abstract: transistor TO-92 bc108 BC237 bc140-10 to92 BC107B to92 2N2904 transistor TO92
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Pin Diode MPN3404 This device is designed primarily for VHF band switching applications but is also suitable for use in general–purpose switching circuits. It is supplied in a cost–effective TO–92 type plastic package for economical, high–volume consumer and industrial
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mpn3404226actempera218amsc1621t1+12msc2404msd1819amv1620mv1624mv1636mv1640mpn3404 equivalenttransistor to-92 bc108bc237bc140-10 to92bc107b to922n2904 transistor to92
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BC107b
Abstract: bc107 curves BC107 for BC107B bc107 applications
Contextual Info: BC107 BC107B Low noise general purpose audio amplifiers Description The BC107 and BC107B are silicon planar epitaxial NPN transistors in TO-18 metal case. s ct They are suitable for use in driver stages, low noise input stages and signal processing circuits
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bc107bc107bbc177bc177b+4bc107abc107 curvesfor bc107bbc107 applications
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BC107
Contextual Info: BC107 BC107B Low noise general purpose audio amplifiers Description The BC107 and BC107B are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable for use in driver stages, low noise input stages and signal processing circuits of television receivers. The PNP complementary
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bc107bc107bbc177bc177b+1bc107a
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BC107
Abstract: BC107B bc107 curves equivalent transistor bc107 Transistor BC107 DATASHEET Transistor BC107 transistor bc107b bc107 applications bc107 connections Characteristic curve BC107
Contextual Info: BC107 BC107B Low noise general purpose audio amplifiers Description The BC107 and BC107B are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable for use in driver stages, low noise input stages and signal processing circuits of television receivers. The PNP complementary
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bc107bc107bbc177bc177b+9bc107abc107 curvesequivalent transistor bc107transistor bc107datasheet transistor bc107transistor bc107bbc107 applicationsbc107 connectionscharacteristic curve bc107
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BC237
Abstract: Y2 sot 23
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV3401LT1 Silicon Pin Diode Motorola Preferred Device This device is designed primarily for VHF band switching applications but is also suitable for use in general–purpose switching circuits. Supplied in a Surface Mount
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mmbv3401lt1236abp218amsc1621t1+8msc2404msd1819amv1620mv1624mv1636mv1640bc237y2 sot 23
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BC237
Abstract: bc547 marking transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon General Purpose Amplifier Transistor 2SA1774 This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT–416/SC–90 package which is designed for low power
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416/scinch/30002sa1774msc1621t1+8msc2404msd1819amv1620mv1624mv1636mv1640bc237bc547 marking transistor
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MV104 "direct replacement"
Abstract: 2N3819 Application Note BF245 application note K 2056 transistor MV104 equivalent BC237 BSS89 APPLICATION
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MV104 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configurations for minimum signal distortion and detuning.
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mv104226aacurren218amsc1621t1+12msc2404msd1819amv1620mv1624mv1636mv104 "direct replacement2n3819 application notebf245 application notek 2056 transistormv104 equivalentbc237bss89 application
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BC237
Abstract: 2n2222a SOT223 5161 common anode
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MV7005T1 Silicon Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for use in high capacitance, high–tuning ratio applications. The device is housed in the SOT-223 package which is designed for
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ot-223mv7005t1msc1621t1msc2404+8msd1819amv1620mv1624mv1636mv1640bc2372n2222a sot2235161 common anode
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motorola p1f
Abstract: hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT2222AT1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for
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ot-223pzt2907at1pzt2222at1inch/1000+12pzt2222at3inch/4000unit218amsc1621t1motorola p1fhie for bc547bbc237transistor motorola 2n3053marking p1f619 sc-59p1f markingmarking code zi sot363
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diode l 0607
Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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m1ma141/2kt1inch/3000m1ma141/2kt3inch/10+6m1ma141kt1m1ma142kt170/sotmsc1621t1diode l 0607bc237
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2N2222 MPS2222 npn transistor
Abstract: transistor BF245 transistor 2N3819 SOT-223 number code book FREE BC237 2N4410 Transistor marking 651 sot363 transistor MPS5771 transistor bf391 Transistor BC107 motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT651T1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for
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pzt651t1inch/1000pzt651t3inch/4000+16p218amsc1621t1msc2404msd1819amv1620mv16242n2222 mps2222 npn transistortransistor bf245transistor 2n3819sot-223 number code book freebc2372n4410 transistormarking 651 sot363transistor mps5771transistor bf391transistor bc107 motorola
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54WT1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and
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BC237
Abstract: 6 21 X2 marking code sot 323
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.
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m1ma151/2at1inch/3000m1ma151/2at3inch/10+6m1ma151at1m1ma152at1msc1621t1msc2404bc2376 21 x2 marking code sot 323
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stencil
Abstract: BC237 automatic heat detector project report BC393 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and
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bat54t1ju218amsc1621t1msc2404+10msd1819amv1620mv1624mv1636mv1640mv1642stencilbc237automatic heat detector project reportbc393 equivalent
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2N5458
Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.
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transistor marking lv3
Abstract: BC237 2n2222 transistor pin b c e
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diodes BAT54LT1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and
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bat54lt1236ababo218amsc1621t1+9msc2404msd1819amv1620mv1624mv1636mv1640transistor marking lv3bc2372n2222 transistor pin b c e
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EQUIVALENT FOR zt751
Abstract: zt751 TRANSISTOR zt751 BC237 transistor BF245
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZT751T1 PNP Silicon Planar Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for
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pzt751t1inch/1000pzt751t3inch/4000+11msc1621t1msc2404msd1819amv1620mv1624mv1636equivalent for zt751zt751transistor zt751bc237transistor bf245
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts
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MPQ6700 equivalent
Abstract: 2N5458 equivalent BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Complementary Pair Transistor MPQ6700 NPN/PNP Silicon 14 13 12 11 10 9 8 1 2 3 4 5 MPQ6502 For Specifications, See MPQ6001 Data COMPLEMENTARY 6 7 MPQ6600A1 TYPE B For Specifications, See MPQ6100A Data MAXIMUM RATINGS
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mpq6700mpq6502mpq6001mpq6600a1+9mpq6100amsc1621t1msc2404msd1819amv1620mv1624mpq6700 equivalent2n5458 equivalentbc237
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BC237
Abstract: 2n2222 sot-23
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts
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mmbd352lt1mmbd353lt1mmbd354lt1mmbd355lt1+8therma218amsc1621t1msc2404msd1819amv1620mv1624bc2372n2222 sot-23
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TSOP 48 thermal resistance
Abstract: BC237 Transistor BC107b motorola transistor 2N3819 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as
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mmft96218amsc1621t1msc2404msd1819a+11mv1620mv1624mv1636mv1640mv1642mv1644tsop 48 thermal resistancebc237transistor bc107b motorolatransistor 2n3819bcy72
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2N3819
Abstract: BC237 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2SC4617 Preliminary Information NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-416/SC–90 package which is designed for
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