FMXA4203 Search Results

FMPG2F

Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179

FMXG12

Abstract: FMX4202S fmng12 FML4202S FMXA2202S sjpl-d2 FMXA-2202S FMX-4202S SJPX-F2 FMXS-4202
Contextual Info: 4-3 Ultrafast Recovery Diodes ●Surface-Mount 1.0 1.5 2.0 Surface-Mount SJP Surface-Mount (SJP) Surface-Mount (SJP) SJPL-D2 SJPX-F2 3.0 3.0 Surface-Mount (SJP) Surface-Mount (D pack) SJPL-L2 SPX-G32S SPX-62S 60 80 -40 to +150 -40 to +150 0.98 0.98 trrq

Contextual Info: 4-3 Ultrafast Recovery Diodes ●Surface-Mount 1.0 1.5 2.0 Surface-Mount SJP Surface-Mount (SJP) Surface-Mount (SJP) SJPL-D2 SJPX-F2 3.0 3.0 Surface-Mount (SJP) Surface-Mount (D pack) SJPL-L2 SPX-G32S SPX-62S 60 80 -40 to +150 -40 to +150 0.98 0.98 IR(H)

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

SD MOSFET DRIVE DATASHEET 4468 8 PIN

Abstract: SK 18752 ctx12s fgt313 18752 SANKEN sla6805m fn651 sla6101 SK 18751 str20012
Contextual Info: 半导体产品总目录 Sanken Electric Co., Ltd. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan 电话：81-3-3986-6164 传真：81-3-3986-8637 海外销售办事处 亚洲 新加坡 Sanken Electric Singapore Pte. Ltd. 150 Beach Road, #14-03 The Gateway West, Singapore 189720

Contextual Info: 4-3 Ultrafast Recovery Diodes VRM V IF (AV) (A) Values in parentheses are for the products with heatsinks Package Axial (Body Diameter/Lead Diameter) Part Number 10.0 TO-220F（Center-tap） FMXB-2102 200 300 IF (A) IR(H) IR (µA) (mA) VR=VRM VR=VRM max

Contextual Info: 4-3 Ultrafast Recovery Diodes VRM V 200 300 400 600 186 Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave 10.0 TO-220F(Center-tap) FMXB-2102 10.0 TO-220F(Center-tap) FML-22S 10.0 TO-220F(Center-tap) 10.0

rjp 6065

Abstract: RJP 3045 ACS758 tda 7304 sla6805m OHD 3- 105M SLA6805MP tda 3640 pin diode tda 1053 ACS758LCB
Contextual Info: Bulletin No O03JF0 （Jan.,2010） 半導体総合カタログ I C トランジ スタ サ イリスタ ダ イオ ード サンケン電気株式会社 http://www.sanken-ele.co.jp 注意 ● 本書に記載されている内容は改良などにより予告なく変更することがありますので、最新の情報

FMN-1106S

Abstract: rvb 602 diode ry2a FMN 2206 RBV-3006 ry2a zener diode reference guide RU20x RK1X fmx4202s
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Ordering Information & Standard Packing Quantities . 194 Taping Specifications . 196

fgt313

Abstract: transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a
Contextual Info: Part Number Index Part No. Category Description Page Part No. Category Description Page 2SA1186 Transistor Audio and General Purpose LAPT 156 2SC4024 Transistor DC-DC Converter and General Purpose 158 2SA1215 Transistor Audio and General Purpose (LAPT) 156

FMXA-4203S

Abstract: 4203S FMX-33S sanken lot number FMXA4203 B105 CF35 SANKEN power supply A18T FMX33S
Contextual Info: Ultrafast Recovery Diode FMXA-4203S November, 2005 •General Description ■Package-TO3PF Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a high frequency rectifier FRD for FCC power supply, etc.

SSC9512

Abstract: STR-W6750 B1560 equivalent STRW6252 str3a100 sanken audio modules 24v dc soft start motor control diagram DARLINGTON TRANSISTOR ARRAY strw6053 inverter 12v to 220 ac mosfet based
Contextual Info: Bulletin No O03EH0 （Mar, 2013） Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China

FMXG12

Contextual Info: 4-3 Ultrafast Recovery Diodes VRM V 200 300 400 600 186 Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave 10.0 TO-220F(Center-tap) FMXB-2102 10.0 TO-220F(Center-tap) FML-22S 10.0 TO-220F(Center-tap) 10.0

Contextual Info: 4-3 Ultrafast Recovery Diodes VRM V 200 300 400 600 186 Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave 10.0 TO-220F(Center-tap) FMXB-2102 10.0 TO-220F(Center-tap) FML-22S 10.0 TO-220F(Center-tap) 10.0

LM3661TL-1.40

Abstract: FMX-G22
Contextual Info: 4-3 Ultrafast Recovery Diodes VRM V IF (AV) (A) Values in parentheses are for the products with heatsinks Package Axial (Body Diameter/Lead Diameter) Part Number 10.0 TO-220F（Center-tap） FMXB-2102 200 300 IF (A) IR(H) IR (µA) (mA) VR=VRM VR=VRM max

transistor BU 102S

Abstract: fgt313 stp 10n40 SLA4052 BU 102S c4381 high voltage 3-phase motor driver ic RELAY sz - 2103 12V C5100 MOSFET SLA5096
Contextual Info: SEMICONDUCTORS GENERAL CATALOG 2010 Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China

Contextual Info: Ultrafast Recovery Diode FMXA-4203S General Description Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a high frequency rectifier FRD for FCC power supply, etc. Applications

FML24S

Abstract: FMX-G22
Contextual Info: 4-3 Ultrafast Recovery Diodes VRM V 200 300 400 600 186 Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave 10.0 TO-220F(Center-tap) FMXB-2102 10.0 TO-220F(Center-tap) FML-22S 10.0 TO-220F(Center-tap) 10.0

LM3661TL-1.40

Abstract: FMXG16S
Contextual Info: 4-3 Ultrafast Recovery Diodes VRM V 200 300 400 600 186 Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave 10.0 TO-220F(Center-tap) FMXB-2102 10.0 TO-220F(Center-tap) FML-22S 10.0 TO-220F(Center-tap) 10.0

LM3661TL-1.40

Abstract: FMXJ-2146S fmgg26
Contextual Info: 4-3 Ultrafast Recovery Diodes VRM V 200 300 400 600 186 Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave 10.0 TO-220F(Center-tap) FMXB-2102 10.0 TO-220F(Center-tap) FML-22S 10.0 TO-220F(Center-tap) 10.0

Contextual Info: 4-3 Ultrafast Recovery Diodes ●Surface-Mount 1.0 1.5 2.0 Surface-Mount SJP Surface-Mount (SJP) Surface-Mount (SJP) SJPL-D2 SJPX-F2 3.0 3.0 Surface-Mount (SJP) Surface-Mount (D pack) SJPL-L2 SPX-G32S SPX-62S 60 80 -40 to +150 -40 to +150 0.98 0.98 IR(H)

SK 18752

Abstract: 2SC5586 SK 18751 sla6101 sk c4467 STR20012 SLA6102 sk A1186 SK C5071 fn651
Contextual Info: SANKEN 半导体 CONTENTS 目 录 1 集成电路 1-1 1-2 2 1-1-2 开关式稳压集成电路 . 41 1-1-3 多路输出型稳压集成电路 . 93

SJPX-H6

Abstract: SJPL-H2 FML-4202S SJPX-F2 fml4202s 220F AL01Z EL02Z MPL-102S 4203s
Contextual Info: 4-3 Ultrafast Recovery Diodes ●Surface-Mount VRM V 200 IF (AV) (A) Values in parentheses are for the products with heatsinks Package Part Number Tstg (°C) VF (V) max 25 30 25 -40 to +150 -40 to +150 -40 to +150 0.98 0.98 0.98 IR(H) IR (mA) (µA) VR=VRM VR=VRM

4203S

Abstract: AV2018 FMX-33S ULTRAFAST RECOVERY diode
Contextual Info: Ultrafast Recovery Diode FMXA-4203S November, 2005 •General Description ■Package-TO3PF Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a high frequency rectifier FRD for FCC power supply, etc.