FMW2 Search Results

EN 133200

Abstract: EN 133200 fmw2 EN 138100 55002044
Contextual Info: EMC-Power Line Filters for 1-Phase Systems FMW2 Series, 2-stage all-purpose filters to Protection Class I, for switching power supplies, conform to EN 133200, UL 1283 and IEC 60950 Nominal current: Rated voltage UR Umax : Attenuation: Leakage current: Test voltages:

varistor 4

Abstract: EN 133200 EN 133200 fmw2 znr varistor znr series mtbf
Contextual Info: EMC-Power Line Filters for 1-Phase Systems FMW2 Series, 3-stage all-purpose filters to Protection Class I, for highest requirements, conform to EN 133200, UL 1283 and IEC 60950 Nominal current: Rated voltage UR Umax : Attenuation: Leakage current: Test voltages:

UMS2N

Abstract: umw2n
Contextual Info: Transistors UMS2N / UMT2N / FMS2A / IMT2A / IMT3A UMW2N / UMX2N / UMX3N / FMW2 / IMX2 / IMX3 94S-366-A032 (96-427-C022) 595

2SC2412AK

Contextual Info: UMS2N / UMT2N / FMS2A / IMT2A / IMT3A Transistors UMW2N / UMX2N / UMX3N / FMW2 / IMX2 / IMX3 I General Purpose Dual Transistors UMS2N / UMT2N / FMS2A / IMT2A / IMT3A •Features 1 ) Two 2SA1037AK chips are housed in a UMT or SMT package •A b s o lu te maximum ratings (Ta=25’C )

transistors w2

Contextual Info: UMW2N FMW2 Transistor, dual, NPN Features Dimensions Units: mm available in UMT5 (UMT) and SMT5 (FMT, SC-74A) packages package marking: UMW2N and FMW2; W2 package contains two transistors, 2SC2412K, with common base hFE and VBE characteristics of FMW2 ensure good pairing

"MARKING CODE W2"

Abstract: FMW2 SC-74A 2SC2412AK T108 T148 dual transistors sMT5 T2R marking SMT6 T108 EMT6
Contextual Info: EMW2 / EMX2 / EMX3 / UMW2N /UMX2N / UMX3N / FMW2 / IMX2 / IMX3 Transistors General purpose dual transistors EMW2 / EMX2 / EMX3 / UMW2N / UMX2N / UMX3N / FMW2 / IMX2 / IMX3 zFeatures 1) Two 2SC2412AK chips in a EMT or UMT or SMT package. zEquivalent circuit

VARISTOR znr

Abstract: EN 133200 EN 133200 fmw2 znr-varistor znrvaristor znrv
Contextual Info: EMC-Power Line Filters for 1-Phase Systems FMW2 Series, all-purpose filters to Protection Class I, conform to EN 133200, UL 1283 and IEC 60950 Nominal current: Rated voltage UR Umax : Attenuation: Leakage current: Test voltages: Climatic category: 50% saturation typ.:

FMW2

Contextual Info: '/ Z. $ /'Transistors UMW2N FMW2 • fill UMW2N/FMW2 h 7 > V ^ ^ / D u a l Mini-Mold Transistor xtr^#'>T;uyu-^-JßNPN ><;□> h7 > v z $ Epitaxial Planar NPN Silicon Transistor /General Small Signal Amp. • ^-ffi^tSO/Dimensions Unit: mm 1) X - M — 5 - i - J U

2SC2412AK

Abstract: T108 T148
Contextual Info: EMW2 / EMX2 / EMX3 / UMW2N /UMX2N / UMX3N / FMW2 / IMX2 / IMX3 Transistors General purpose dual transistors EMW2 / EMX2 / EMX3 / UMW2N / UMX2N / UMX3N / FMW2 / IMX2 / IMX3 zFeatures 1) Two 2SC2412AK chips in a EMT or UMT or SMT package. zEquivalent circuit

EN 133200

Abstract: EN 133200 fmw2 IEC 60068-1 MIL-HB-217 znrvar varistor y2 ZNRV emcp
Contextual Info: EMC-Power Line Filters for 1-Phase Systems FMW2 Series, all-purpose filters to Protection Class I, conform to EN 133200, UL 1283 and IEC 60950 Nominal current: Rated voltage UR Umax : Attenuation: Leakage current: Test voltages: Climatic category: 50% saturation typ.:

Contextual Info: UMS2N / UMT2N / FMS2A / IMT2A / IMT3A UMW2N / UMX2N / UMX3N / FMW2 / IMX2 / IMX3 Transistors I General Purpose Dual Transistors UMS2N / UMT2N / FMS2A / IMT2A / IMT3A •A bsolu te maximum ratings (T a = 2 5 t0 •Features 1 ) Two 2SA1037AK chips are housed in a UMT or SMT package

EN 133200

Abstract: EN 133200 fmw2
Contextual Info: EMC-Power Line Filters for 1-Phase Systems FMW2 Series, all-purpose filters to Protection Class I, for higher currents, conform to EN 133200, UL 1283 and IEC 60950 Nominal current: Rated voltage UR Umax : Attenuation: Leakage current: Test voltages: Climatic category:

Contextual Info: h 7 > y ^ ^ / T ransistors FMW1 FMW2 FM W 1/FM W 2 i^-^KNPN y 'J= i> h y > y X ^ — fiix'Ml^±e[t1IS!/General Small Signal Amp. Epitaxial Planar Dual Mini-Mold NPN Silicon Transistors • ^•JK vI'& ll/D im ensio n s U n it: mm 1) 7. - A - 5 - -t - JU K M” y 7 - v T

FMW20N60S1

Abstract: 20n60s1 20n60s mosfet 600V 20A FMW20N60S1HF
Contextual Info: / FMW20N60S1HF FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg Outline Drawings [mm]

FMPG2F

Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179

21n60G

Abstract: FMW21N60G 21N60 HER 103 diode
Contextual Info: DATE CHECKED Sep.-27-'04 CHECKED Sep.-27-'04 NAME DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any

FMW-2204

Contextual Info: SANKEN ELECTRIC CO., LTD. FMW-2204 1. Scope The present specifications shall apply to an FMW-2204. 2. Outline 3. Type Silicon Schottky Barrier Diode Structure Resin Molded Applications High Frequency Rectification Flammability UL94V-0 Equivalent 050830 1／5

MPE-220A

Contextual Info: 4-4 Schottky Barrier Diodes Standard ●Surface-Mount VRM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) Tstg (°C) VF (V) max IF (A) IR (mA) VR=VRM max IR(H) (mA) VR=VRM max Tj (°C) Rth(j-l) Rth(j-c) (°C/W) Mass

Schottky Barrier Diodes

Abstract: ek 1036 FMB29L
Contextual Info: 4-4 Schottky Barrier Diodes VRM V 60 90 IF (AV) (A) Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) Tstg (°C) VF (V) max IF (A) IR (mA) VR=VRM max IR(H) (mA) VR=VRM max Tj (°C) Rth(j-l) Rth(j-c) (°C/W)

SI-8010Y

Abstract: si8010y SI-8050Y SI-8000Y 2200uF 50v FMW-2106 RSN2 si8010 TO220F-7
Contextual Info: 1-1-2 Switching Mode Regulator ICs SI-8000Y Series Current Full-Mold,Mode Separate Control Excitation Step-down Step-down Switching Switching Mode ModeRegulator RegulatorICs ICs •Features ■Absolute Maximum Ratings • Compact equivalent to TO220 full-mold

diode 8603

Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

fmw-2206

Abstract: w 2206 schottky T T 2206 3pin -10-DC- IR sanken power transistor 615t
Contextual Info: http://www.sanken-ele.co.jp SANKEN ELECTRIC FMW-2206 Mar. 2008 Schottky Barrier Rectifier General Description Package FMW-2206 is a Schottky Barrier Diode, and has achieved low TO220F 3Pin leakage current and low VF by selecting the best barrier metal. Applications

STR-H2003

Abstract: STR-H2022 Sanken STR-H2022 STR-H2005 SEC165P2-24 seb80n2 led HG 740 nm STRH2022 SEB80N2-24 SEB100P2
Contextual Info: より明るく薄く、高効率に サンケン の ディスプレイ トータル ~CCFL（冷陰極蛍光放電管）からデバイス、 インバータ、電源モジュールまで∼ より大きく、明るく、そして鮮やかに、と日々進化するＴＶやモニタなどの液晶ディス

Contextual Info: Schottky Barrier Diodes Package Part Number I F AV (A) IFSM (A) 50Hz Tj (°C) VF (V) max IF (A) Half-cycle Sinewave Single Shot Surface Mount Surface Mount Center-tap Axial Frame-2Pin VR = VRM max Ta (°C) Rth (j- ) Rth (j-c) (°C/W) Mass (g) 1.0 30 –40 to +150