FMU26S Search Results

FMU-22S

Abstract: fmu26s
Contextual Info: FMU-21S-FMU26S Fast Recovery Rectifiers VOLTAGE RANGE: 100~600V CURRENT: 10 A ITO-220AB Features 4.5± 0.2 Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses The plastic m aterial carries U/L recognition 94V-0

FMPG2F

Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179

FMU-12S

Abstract: FMU-14S FMU-16S FMU-21S FMU-22S FMU-24S FMU-26S FMU-32S FMU-34S FMU-36S
Contextual Info: Fast-Recovery Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter VRM (V) Type No. FMU-12S, R FMU-14S, R FMU-16S, R FMU-21S, R FMU-22S, R FMU-24S, R FMU-26S, R FMU-32S, R FMU-34S, R FMU-36S, R Tj (°C) VF (V) Tstg (°C)

FMUG16

Abstract: FMQG5FM fmqg2f fmqg5g
Contextual Info: 4-2 Fast Recovery Diodes VRM V 600 800 1000 1300 1500 IF (AV) (A) Package Axial Values in parentheses are for the products with heatsinks (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave T stg (°C) VF (V) max IF (A)

CTU12S

Abstract: CTU-12S CTU-22U FMU-22S FMU-34S FMU36S equivalent FMU+100 CTU22S fmu36s FMU-12S
Contextual Info: j SANKEN E L E C T R I C CO LTD m 3SE ,3> ; . Fast Recovery Diodes 7^^0741 ÜQODÖOT ö H S A K J ~pZ3"Ö7 j3VRM:l00-~i300V Ello:4.0~20A TU/FMU Rating/ Characteristics Absolute Maximum Ratings Vrsm V Type N o \ ^ CTU-G2DR CTU-G3DR FMU-12S, R FMU-14S, R FMU-16S, R

diode 8603

Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

Contextual Info: I F AV (A) Part Number 50Hz ( ) is with Half-cycle Sinewave Heatsink Single Shot VR = VRM VR = VRM Ta max max (°C) t rr 1 (µs) 2 (µs) IF / I FP (mA) Rth (j- ) Mass Fig. Rth (j-c) (g) No. (°C/W) IF / I FP (mA) 15 –40 to +150 2.5 0.25 10 150 100 0.4

Contextual Info: 4-2 Fast Recovery Diodes VRM V 600 800 1000 1300 1500 IF (AV) (A) Package Axial Values in parentheses are for the products with heatsinks (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave T stg (°C) VF (V) max IF (A)

FMQG5GS

Contextual Info: 4-2 Fast Recovery Diodes VRM V 600 800 1000 1300 1500 IF (AV) (A) Package Axial Values in parentheses are for the products with heatsinks (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave T stg (°C) VF (V) max IF (A)

alternator rectifier diode 50a

Abstract: EL 14v 4c STA509A equivalent sta509a smd diode marking A05 CTB-34M HALL SENSOR A 22L GENERAL SEMICONDUCTOR MARKING mJ SMA ED TRANSISTOR SMD MARKING CODE 12w Zener diode smd marking code 22h
Contextual Info: Bulletin No C01EA0 Jun., 1999 DEVICES for AUTOMOTIVE CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

RU 1A

Abstract: FMUG16 FMU-G16S AU02A ES01A EU01A EU02A FMU-16S FMU-26S FMU-36S
Contextual Info: Part Number 50Hz is with Half-cycle Sinewave Heatsink Single Shot VR = VRM VR = VRM Ta (°C) max max t rr 1 (µs) 2 (µs) IF / I FP (mA) Rth (j- ) Mass Fig. Rth (j-c) (g) No. (°C/W) IF / I FP (mA) 15 –40 to +150 2.5 0.25 10 150 100 0.4 10/10 0.18 10/20

fn651

Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102

Contextual Info: SANKEN ELECTRIC CO., LTD. FMU-26S/R １ Scope The present specifications shall apply to FMU-26S/R. ２ Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification ３ Flammability UL94V-0 Equivalent ４ Absolute maximum ratings

B 2306 BARRIER RECTIFIER

Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

Contextual Info: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)

FMU-14S, R

Contextual Info: FAST-RECOVERY RECTIFIER DIODES BRIDGE TYPE FAST-RECOVERY RECTIFIER DIODES (CENTER-TAP TYPE) Type No. V rm lo Ifsm vF Ir t„ (V) (A) (A) Max. @ lF (mA) (MS) with Fin FMU-12S.R (V) 400 FMU-16S.R 600 FMU-21S.R 100 FMU-22S.R 200 FMU-24S.R 400 FMU-26S.R 600

UX-F5B

Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Contextual Info: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

FMPG2F

Abstract: zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23
Contextual Info: Bulletin No. D01ED0 Oct., 2000 SI LICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in

diode ru

Abstract: diode RU 3AM AS01A AU01A AU02A ES01A EU01A EU02A FMU-16S FMU-26S
Contextual Info: Part Number 50Hz is with Half-cycle Sinewave Heatsink Single Shot VR = VRM VR = VRM Ta max max (°C) t rr 1 (µs) 2 (µs) IF / I FP (mA) Rth (j- ) Mass Fig. Rth (j-c) (g) No. (°C/W) IF / I FP (mA) –40 to +150 2.5 0.25 10 150 100 0.4 10/10 0.18 10/20

EH 1

Abstract: ES 1Z ES 1 Fast Recovery Diodes FMUG16 FMY-1106S FMY-1036S fmy-1106 FMY1106
Contextual Info: 4-2 Fast Recovery Diodes ●Thru-Hole VRM V 200 400 IF (AV) (A) Values in parentheses are for the products with heatsinks (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave Tstg (°C) VF (V) max IF (A) IR IR(H) (µA) (µA)

SD MOSFET DRIVE DATASHEET 4468 8 PIN

Abstract: SK 18752 ctx12s fgt313 18752 SANKEN sla6805m fn651 sla6101 SK 18751 str20012
Contextual Info: 半导体产品总目录 Sanken Electric Co., Ltd. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan 电话：81-3-3986-6164 传真：81-3-3986-8637 海外销售办事处 亚洲 新加坡 Sanken Electric Singapore Pte. Ltd. 150 Beach Road, #14-03 The Gateway West, Singapore 189720

Contextual Info: 4-2 Fast Recovery Diodes VRM V 600 IF (AV) (A) Package Axial Values in parentheses are for the products with heatsinks (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave T stg (°C) VF (V) max IF (A) IR IR(H) (µA) (µA)