FMX-32S
Abstract: AG01 AL01 EG01 FMG-14S FMG-24S FML-14S FML-24S FML-G14S FMN-G14S
Contextual Info: Part Number IFSM A Tj (°C) 50Hz IF V = V V = V Ta R RM R RM (A) (°C) max max 1.3 1.0 10 0.05 150 50 100/100 30 100/200 20 0.07 1.8 0.7 100 0.5 100 100 100/100 50 100/200 22 0.13 0.7 15 –40 to +150 2.0 0.7 50 0.3 100 100 100/100 50 100/200 20 0.2 0.8
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fmx-32sag01al01eg01+6fmg-14sfmg-24sfml-14sfml-24sfml-g14sfmn-g14s
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MN638S
Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein
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infringement0718h1-c01ec0-0110015tamn638ssta464c+8sk 3001srelay re 04501spf0001sta509aschottky diode 80v 6a2sd2633sk 5151ssla2403m
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FMPG2F
Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179
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rbv-60rbv-40fmpg2fmarking rbv - 401+83f series surface mount transistorfmxa-2202srbv-406msjpm-h4fmv-3hu diodediode eu02rectifier rbv-606marking rbv
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FML36S
Contextual Info: Ultra-Fast-Recovery Rectifier Diodes Electrical Characteristics(Ta=25℃) Absolute Maximum Ratings Parameter (A) VRM I F( AV) (V) With Type No. Heatsink FML-32S 200 FML-33S 300 IFSM (A) Tj Tstg (℃) (℃) 50Hz Half-cycle Sinewave
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AG01Z
Abstract: AL01Z EG01Z EN01Z MP2-202S MPL-102S SFPL-52 SFPL-62 SFPX-62 SPX-62S
Contextual Info: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) t rr 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)
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diode 8603
Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41
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vr-60ssvr-61ssdiode 8603sot23 1z+8fmv-3hurm2crn4zgeneral fbtux-f5b3gu diodediode rbv-406mpart marking
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10zrl
Contextual Info: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) t rr 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)
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alternator rectifier diode 50a
Abstract: EL 14v 4c STA509A equivalent sta509a smd diode marking A05 CTB-34M HALL SENSOR A 22L GENERAL SEMICONDUCTOR MARKING mJ SMA ED TRANSISTOR SMD MARKING CODE 12w Zener diode smd marking code 22h
Contextual Info: Bulletin No C01EA0 Jun., 1999 DEVICES for AUTOMOTIVE CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein
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c01ea0h1-c01ea0-9906015taalternator rectifier diode 50ael 14v 4c+8sta509a equivalentsta509asmd diode marking a05ctb-34mhall sensor a 22lgeneral semiconductor marking mj sma edtransistor smd marking code 12wzener diode smd marking code 22h
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fn651
Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102
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2sa7442sa7452sa7462sa747+162sa7642sa7652sa7682sa7692sa7702sa771fn651ctb-34d2sc5586hvr-1x7str20012sap17n2sd2619rbv-4156bsla40372sk1343
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B 2306 BARRIER RECTIFIER
Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41
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vr-60ssvr-61ssb 2306 barrier rectifierdiode ru 3b+8fmq2furbv-406ux-f5bw 2206 schottkyfmv -30jez0150fmu 22 ufmp-3fu
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SK 18752
Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 (May, 2008) SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,
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AG01Z
Abstract: AL01Z EG01Z EL02Z EN01Z FML-G12S SFPL-52 SFPL-62 SFPX-62 SPX-62S
Contextual Info: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)
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Contextual Info: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)
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FMX-12S
Abstract: RBA-402L FMPG12
Contextual Info: 5-3. Ultra-Fast Recovery Rectifier Diodes Surface Mount Type Type No. VRM V IF (AV) (A) SFPL-52 0.9 -62 1.0 SPX-G32S 200 -62S* I FSM Tj (A) (Ta = 25°C) Tstg VF (V) IR (µA) max per max per element element (°C) trr1 (ns) trr2 (ns) max max 50 35 Fig. No.
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SE012
Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2sa11862sa12152sa12162sa1262+162sa12942sa12952sa13032sa13862sa1386a2sa1488se012se090se140nse115ndiode2sc5487sta474a8050ese110nsla-7611
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diode RU 3AM
Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)
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FMPG2F
Abstract: zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23
Contextual Info: Bulletin No. D01ED0 Oct., 2000 SI LICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in
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d01ed0sfpj-63vr-60sssfpj-73+14vr-61sssfpl-52sfpl-62sfpm-52fmpg2fzener diode reference guidediode marking 30jmicrowave oven high voltage rectifier diode - hvrdiode hvr 1xfmb-34msot23 3f markfmlg12rbv sot23marking code rbv sot23
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AG01Z
Abstract: AL01Z EG01Z EN01Z MP2-202S MPL-102S SFPL-52 SFPL-62 SFPX-62 SPX-62S
Contextual Info: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) t rr 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)
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fmx32s
Abstract: fml36s FMG36S FML-33S FML33S fmx-32s FMX-23S FMG-13S FMG-33S FML-13S
Contextual Info: Package I F AV (A) Part Number IFSM (A) 50Hz Tj (°C) IR (H) (mA) t rr VF (V) max IF V = V V = V Ta R RM R RM (A) (°C) max max Half-cycle Sinewave Single Shot Surface Mount SFPX-63 IR (µA) Tstg (°C) 1 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)
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SD MOSFET DRIVE DATASHEET 4468 8 PIN
Abstract: SK 18752 ctx12s fgt313 18752 SANKEN sla6805m fn651 sla6101 SK 18751 str20012
Contextual Info: 半导体产品总目录 Sanken Electric Co., Ltd. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan 电话:81-3-3986-6164 传真:81-3-3986-8637 海外销售办事处 亚洲 新加坡 Sanken Electric Singapore Pte. Ltd. 150 Beach Road, #14-03 The Gateway West, Singapore 189720
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o03cc0room3202h1-o03cc0-1008031nmsd mosfet drive datasheet 4468 8 pin+9sk 18752ctx12sfgt31318752 sankensla6805mfn651sla6101sk 18751str20012
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CTX12S
Abstract: SLA4038 fn651 SLA4037 sla1004 CTB-34D SAP17N 2SC5586 2SK1343 CTPG2F
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.2.4 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102
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triac zd 607
Abstract: transistor C5586 bridge rectifier sanken rb40 rb40 bridge rectifier rb60 bridge rectifier ZD 607 - triac CTPG2F CTX12S Toshiba transistor c4468 STA524A
Contextual Info: Warning ● The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest version of the document before use. ● The operation and circuit examples in this document are provided for reference purposes
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the32-246622h1-o03ea0-0510020nmtriac zd 607transistor c5586+8bridge rectifier sanken rb40rb40 bridge rectifierrb60 bridge rectifierzd 607 - triacctpg2fctx12stoshiba transistor c4468sta524a
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AG01Z
Abstract: AL01Z EG01Z EN01Z MP2-202S MPL-102S SFPL-52 SFPL-62 SFPX-62 SPX-62S
Contextual Info: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) t rr 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)
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AG01Z
Abstract: AL01Z EG01Z EN01Z MP2-202S MPL-102S SFPL-52 SFPL-62 SFPX-62 SPX-62S
Contextual Info: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) t rr 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)
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