FM250 Search Results

Contextual Info: FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

1E10

Abstract: FM25040 FM25040-P FM25040-S FM25160 MS-001
Contextual Info: FM25040 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process

FM25040A-GA

Abstract: FM25040 FM25040A Q100
Contextual Info: AEC Q100 Grade 1 Compliant FM25040A – Automotive Temp. 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

AN-307

Abstract: FM25040 AN307 FM25040A 25040-s
Contextual Info: AN-307 Differences between FM25040 and FM25040A 4Kb 5V SPI FRAM Devices DESCRIPTION The FM25040 was declared “obsolete” in December 2004, and the alternative device was the FM25040A device. Functionally the two devices are the same. The command set op-codes , the addressing, and the

MC6805 pin diagram

Abstract: "Ferroelectric RAM" ramtron FRAM SCK 055 FM25040 MC6805 MC68HC11
Contextual Info: FM25040 FRAM Serial Memory Product Specification Features Simple Three Wire Bus - SPI Compatible CPOL = 0, CPHA = 0 - 2.1MHz Maximum Clock Rate • Multiple Levels of Write Protection - Hardware Write Protect Pin - Internal Write Enable Latch - Block Protect Bits

Contextual Info: FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Sophisticated Write Protection Scheme

FM25040

Abstract: Ramtron FRAM Serial Memory
Contextual Info: FM25040FRAM Serial Memory F^pM lR O N Product Preview" Features • 4Kbit Nonvolatile Ferroelectric RAM Organized as 512 x 8 ■ Low Power CMOS Technology - 10pA Standby Over Industrial Temperature Range - 5pA Standby Over Commercial Temperature Range ■ Reliable Thin Film Ferroelectric Technology

FM25040A-GTR

Abstract: FM25040 FM25040A FM25040A-G FM25040A-S 245C0 lter marking
Contextual Info: FM25040A 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25040

Abstract: FM25040-S FM25160
Contextual Info: FM25040 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced high-reliability ferroelectric process

JEDEC method

Abstract: FM2500W
Contextual Info: RECTRON FM2500W SEMICONDUCTOR TECHNICAL SPECIFICATION HIGH VOLTAGE RECTIFIER VOLTAGE 2500 Volts CURRENT 0.15 Ampere FEATURES * * * * Low cost Low leakage Low forward voltage drop High current capability SMX MECHANICAL DATA Case: Molded plastic Epoxy: Device has UL flammability classification 94V-O

Contextual Info: Preliminary AEC Q100 Grade 1 Compliant FM25040B – Automotive Temp. 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 10 Trillion 1013 Read/Writes • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

fm25040B-GTR

Contextual Info: Preliminary FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

fm power amplifier 108 150w

Abstract: fm mosfet amplifier 1kw FM250IT 1kw mosfet 1kw fm broadcast transmitter an power amplifier 108 mhz brushless fan RF MOSFET MODULE rf mosfet power amplifier 4656z
Contextual Info: FM250IT 250W FM Amplifier The FM250IT is an amplifier for FM Broadcast. The ½ 19” – 4HE structure allows its arrangement in a supporting frame. Thanks to this characteristic, it is possible to build integrated transmitting systems, easy to configure.

1E10

Abstract: FM25040 FM25040-P FM25040-S FM25160 Ramtron FRAM Serial Memory
Contextual Info: FM25040 R 3M 1R O N 4Kb FRAM Serial Memory Features 4K • • • • • bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High endurance 10 Billion 1010 read/writes 10 year data retention at 55° C No write delay Advanced high-reliability ferroelectric process

AEC-Q100-002

Abstract: FM25040C
Contextual Info: Preliminary FM25040C 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  36 year Data Retention at +75C  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM25040

Abstract: FM25040A FM25040A-G FM25040A-S
Contextual Info: FM25040A 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM25040 4K b F R A M R3M 1RO N Serial M em ory Features 4K • • • • • bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High endurance 10 Billion 1010 read/writes 10 year data retention at 55° C No write delay Advanced high-reliability ferroelectric process

Contextual Info: FM25040B 4-Kbit 512 x 8 Serial (SPI) Automotive F-RAM 4-Kbit (512 × 8) Serial (SPI) Automotive F-RAM Features Functional Overview • 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 13 ❐ High-endurance 10 trillion (10 ) read/writes

Contextual Info: FM25040B 4-Kbit 512 x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and

Contextual Info: FM25040B 4-Kbit 512 x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and

FM25040A-GTR

Abstract: FM25040 FM25040A FM25040A-G FM25040A-S
Contextual Info: FM25040A 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary FM25040C 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  36 year Data Retention at +75C  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Sophisticated Write Protection Scheme

Contextual Info: ^ M T R O fS J FM25040 FRAM Serial Memory features i tk h it N onvolatile F e rro e le c tric RAM O rg an ize d as > I .! \ N 4 Low P o w e r CMOS Technologv • S im p le T h re e W ire Bus - SP1 C o m p a tib le CPOI. = O .CPIIA = 0 - lOpA Standby O ver In d u s tria l T e m p e ra tu re R ange