FM25040A-GA
Abstract: FM25040 FM25040A Q100
Contextual Info: AEC Q100 Grade 1 Compliant FM25040A – Automotive Temp. 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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fm25040ams-012fm25040agaa60023g+4ric0650fm25040a-gafm25040q100
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AN-307
Abstract: FM25040 AN307 FM25040A 25040-s
Contextual Info: AN-307 Differences between FM25040 and FM25040A 4Kb 5V SPI FRAM Devices DESCRIPTION The FM25040 was declared “obsolete” in December 2004, and the alternative device was the FM25040A device. Functionally the two devices are the same. The command set op-codes , the addressing, and the
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FM25040A-GTR
Abstract: FM25040 FM25040A FM25040A-G FM25040A-S 245C0 lter marking
Contextual Info: FM25040A 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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fm25040afm25040bfm25040a-gtrfm25040+4fm25040a-gfm25040a-s245c0lter marking
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FM25040
Abstract: FM25040A FM25040A-G FM25040A-S
Contextual Info: FM25040A 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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fm25040afm25040a-sa40003sric0450+2fm25040fm25040a-g
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FM25040A-GTR
Abstract: FM25040 FM25040A FM25040A-G FM25040A-S
Contextual Info: FM25040A 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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fm25040afm25040a-ga40003g1ric0450+3fm25040a-gtrfm25040fm25040a-s
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Contextual Info: AEC Q100 Grade 1 Compliant FM25040A – Automotive Temp. 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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fm25040afm25040agaa60023gric0650+1fm25040b-ga
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FM25040
Abstract: FM25040A FM25040A-G FM25040A-S
Contextual Info: Pre-Production FM25040A 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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fm25040afm25040a-sa40003sric0450+2fm25040fm25040a-g
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FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178
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gp-20fsq510 equivalentbta12 6008bta16 6008+7zigbee interface with avr atmega16precision triac control thermostatthyristor t 558 f eupecgw 5819 diodetransistor a564a564 transistorbsm25gp120 b2
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fm23mld16
Abstract: FM3316 7313 28 pin FM25L04 soic8 footprint interface 8KB ROM and 16KB RAM to 8051 FM22L16 FM6124 footprint soic28 RAMTRON
Contextual Info: Co mp uti ng M ete rin g Au tom oti ve Ind us tria l M ed ica l Sc ien tifi c g rin e t e M e tiv o tom Au ng uti p m Co fic nti e i Sc l tria s u Ind Short Form Catalog l ica d e M First Edition 2009 l ria st du In e iv ot m to Au g in er et M Ferroelectric random access memory F-RAM products combine
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300-millionfm23mld16fm33167313 28 pin+7fm25l04soic8 footprintinterface 8kb rom and 16kb ram to 8051fm22l16fm6124footprint soic28ramtron
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FM25V10 I2C programming example
Abstract: FM25L04 FM25xxx FM25V02 FM25V02 -G FM25H20 DFN8 FM25V05 FM25C160 FM25CL64
Contextual Info: AN-304 A Guide to SPI F-RAM Devices Covers Functional Description, Timing, Pseudo Code OVERVIEW The SPI family of F-RAM products offers the market serial high speed, low power, nonvolatile F-RAM memory. SPI F-RAM memory devices take advantage of F-RAM’s fast write performance that
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an-304fm25xxxfm24xxxan304+12fm25l256fm25l256bfm25h20fm25v10/v05/v02fm25v10 i2c programming examplefm25l04fm25v02fm25v02 -gdfn8fm25v05fm25c160fm25cl64
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FM25L04
Abstract: FM25H20 AN304 AN-304 FM25040A FM25256B FM25C160 FM25CL64 FM25L16 FM25L256B
Contextual Info: AN-304 A Guide to SPI F-RAM Devices Covers Functional Description, Timing, Pseudo Code OVERVIEW The SPI family of F-RAM products offers the market serial high speed, low power, nonvolatile F-RAM memory. SPI F-RAM memory devices take advantage of F-RAM’s fast write performance that
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an-304fm25xxxfm24xxxan304+9fm25l256fm25l256bfm25h20fm25l04fm25040afm25256bfm25c160fm25cl64fm25l16
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FM3316
Abstract: SOIC14 FM25L04 10MILLISECOND airbag fm3130 FM32276 AEC-Q100 FM24CL16 FM25040A-GA
Contextual Info: Automotive Event Data Recorder F-RAM ideal for rapid data logging demands of new automotive EDRs The Event Data Recorder EDR is similar to the black box recorder on an airplane. Its function is to record information about accidents so that it is possible to find out what actually
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soic14fm32272fm4005fm33256+10256kbfm3316fm25l0410millisecondairbagfm3130fm32276aec-q100fm24cl16fm25040a-ga
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chn 734
Abstract: FM3316 CHN 545 interface 8KB ROM and 16KB RAM to 8051 fm23mld16 FM25L04 MLF68 FM24C16A FM22L16 FM28V020 MATERIALS
Contextual Info: Co mp uti ng M ete rin g Au tom oti ve Ind us tri al M ed ica l Sc ien tifi c g rin ete M ve oti m to Au ng uti p m Co c tifi n e i Sc ial str u Ind l ica ed M Short Form Catalog First Edition 2010 l ria st du In e iv ot m to Au g in er et M Ferroelectric random access memory F-RAM products combine
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300-millionchn 734fm3316chn 545+7interface 8kb rom and 16kb ram to 8051fm23mld16fm25l04mlf68fm24c16afm22l16fm28v020 materials
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FM24CL64b
Abstract: FM28V202 FM25CL64B FM24C64B FM28V402-C FM24C16B FM28MV802-C FM25V FM24CL04B fm24c04b
Contextual Info: Co mp uti ng M ete rin g Au tom oti ve Ind us tri al M ed ica l Sc ien tifi c g rin ete M ve oti m to Au ng uti p m Co c tifi n e i Sc ial str u Ind l ica ed M Short Form Catalog First Edition 2011 l ria st du In e iv ot m to Au g in er et M Ferroelectric random access memory F-RAM products combine
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s80921fm24cl64bfm28v202fm25cl64b+7fm24c64bfm28v402-cfm24c16bfm28mv802-cfm25vfm24cl04bfm24c04b
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